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Different Resistor Types: 
Carbon film resistors: 
The size of the resistor decides its 
power rating (i.e., the maximum power 
it can dissipate without burning). 
Power rating from the top of the graph: 
1/8 W 
1/4 W 
1/2 W 
Metal film resistors: Used when a higher tolerance (more accurate value) is needed. 
Power rating from the top of the 
graph: 
1/8 W (tolerance ±1%) 
1/4 W (tolerance ±1%) 
1 W (tolerance ±5%) 
2 W (tolerance ±5%) 
Reading resistor values from the colored bands: 
Single-In-Line (SIL) Resistor network:
Variable Resistors: 
Wirewound resistors: 
Ceramic (or cement) resistor: 
Thermistor (thermally sensitive resistor ): 
SMD resistors (Surface-Mount Device):
Different Capacitor Types: 
Ceramic Capacitors: Limited to quite small values, but have high voltage ratings. 
They range from 1pF to 0.47μF and are not polarized. 
Reading Ceramic Capacitor values: 
For the 
number : 
Mult iply 
by: 
LETTER 
TOLERANCE 
1 0 pF or LESS 
TOLERANCE 
OVER 1 0 pF 
0 1 B + / - 0.1pF 
1 10 C + / -0.25pF 
2 100 D + / - 0.5pF 
3 1000 F + / - 1.0pF + / - 1% 
4 10,000 G + / - 2.0pF + / - 2% 
5 100,000 H + / - 3% 
J + / - 5% 
8 0.01 K + / - 10% 
9 0.1 M + / - 20% 
Example: 102 means 10 (and two zeroes) 00 or 1,000 pF or .001uF. 
Electrolytic Capacitors (Electrochemical type capacitors): Used for all values above 
0.1μF. Electrolytics have lower accuracy and temperature stability than most other 
types and are almost always polarised. It's usually best to only use an electrolytic 
when no other type can be used, or for all values over 100μF. 
From the left to right: 
1μF (50V) 
47μF (16V) 
100μF (25V) 
220μF (25V) 
1000μF (50V)
Tantalum Capacitors: Tantalum capacitors pack a large capacity into a relatively 
small and tough package compared to electrolytics, but have much smaller voltage 
ratings. They are often polarized and range from 0.1μF to 100μF. 
From the left to right: 
0.33 μF (35V) 
0.47 μF (35V) 
10 μF (35V) 
Polyester Film Capacitors (Green Caps): Ranging from 0.01μF to 5μF. They are 
similar to ceramics with some larger values and a slightly larger construction. They 
are not polarized. 
Metallized Polyester Film Capacitors: 
SMD Capacitors: 
Variable Capacitors:
Different Inductor Types: 
Inductors: 
Reading Inductor values from color codes: 
High Frequency Coils (ferrite core): 
The Toroidal Coil:
Other interesting components: 
Diodes: 
LED (Light Emitting Diodes): 
Transistors: 
ICs (Integrated Circuits): 
Pin Numbers: 
Multimeters (Analog and Digital):
K. S School of Engineering and Management 
Department of Electronics and Communication Engineering 
A LAB MANUAL ON 
ANALOG ELECTRONICS 
Subject Code: 10ESL37 
(As per VTU Syllabus) 
PREPARED BY 
Staff members : 
Gopalakrishna Murthy C R 
Sanjay Naik 
Vinay R
AEC LAB MANUAL 
CONTENTS 
EXPT. 
NO. 
NAME OF THE EXPERIMENT 
PAGE 
NO. 
01 
Testing of Half wave, full wave and bridge rectifier 
circuits with and without Capacitor filter. 
01 
02 
Testing of Clamping circuits for Positive and Negative 
clamping 
10 
03 
Testing of Diode Clipping circuits (Single/Double ended) 
for peak clipping, peak detection. 
16 
04 RC coupled amplifier using BJT and FET 23 
05 
Testing for the performance of BJT- Hartley oscillator / 
Colpitt’s oscillator for RF range fo > 100KHz. 
31 
06 
Testing for the performance of BJT-Crystal oscillator for 
fo > 100KHz. 
38 
07 
Wiring and testing for the performance of BJT-RC 
phase shift oscillator for fo < 10Khz. 
41 
08 
Wiring of two stage BJT Voltage series feedback 
amplifier 
45 
09 
Verification of Thevenin’s theorem and maximum 
power transfer theorem for DC circuits. 
51 
10 Characteristics of Series and parallel resonance circuits. 55 
11 
Wiring of BJT Darlington emitter follower with and without 
bootstrapping 
59 
12 
Testing of a transformer less Class-B push pull power 
amplifier and determination of its conversion efficiency. 
63 
13 Bibliography 65 
14 Vivo-voce questions 66 
Dept. of ECE, KSSEM Page 1
AEC LAB MANUAL 
Ex.No:01 HALF WAVE, FULL WAVE AND BRIDGE RECTIFIER 
a) HALF WAVE RECTIFIER 
AIM: 
To study Half Wave Rectifier and to calculate ripple factor, efficiency and 
regulation with filter and without filter. 
COMPONENTS REQUIRED: 
Sl. No. Components Details Range/Specification Qty 
1. Diodes BY127/IN4007 1 No. 
2. Capacitor 0.1μf, 100μf Each 1 No. 
3. Power Resistance Board (DRB) - 1 No. 
4. Step down Transformer 12 -0-12 1 No. 
5. CRO, Multimeter, milli ammeter, Connecting Board, wires and etc. 
THEORY: 
Rectifier circuits are used to convert AC in DC. Half wave rectifier circuit 
diode (rectifying element) conducts only during positive half cycle of input ac 
supply. The negative half cycles of ac supply are eliminated from the output. The dc 
output waveform is expected to be a straight line but the half wave rectifier gives 
output in the form of positive sinusoidal pulses. Thus the output is called pulsating 
dc. 
In Full wave rectifier both positive and negative half cycles of AC inputs are 
converted in to pulsating DC output. Capacitor is used as a filtering element to 
remove ac components from output and to convert pulsating DC in to Constant DC . 
CIRCUIT DIAGRAM: 
a) HALF WAVE RECTIFIER WITHOUT FILTER CAPACITOR 
C2 
0.1μF 
A K 
BY127 
RL 
Step down 
Transformer 
AC 
(230V/50HZ) 
12V 
0 
12V 
Ammeter(0-250mA) 
A 
+ - 
VODC VOAC 
Dept. of ECE, KSSEM Page 2
AEC LAB MANUAL 
Note: connect Voltmeter/Multimeter across load Resistor to measure VODC and CRO 
terminals to observe the output wave forms. 
b) HALF WAVE RECTIFIER WITH FILTER CAPACITOR 
Step down 
Transformer 
AC 
(230V/50HZ) 
DESIGN: 
rms IN 12 
V V 
A K 
Ammeter(0-250mA) 
A 
+ - 
0.1μF BY127 
12V 
0 
12V 
V V V INpeak INrms  2  16.97 
V   V / 5.4V O DC m    
Given V   5V O DC  
C1 
100μF 
I   100mA O DC  
R  V   /I    50 L O DC O DC 
Ripple = r = Vo rms / VO DC = 1.21 
Design for the filter capacitor 
Ripple = 1/ (23 f C RL) 
Given r = 0.25 
C = 1/(23 f r RL) 
RL = 50 
f = 50Hz 
=95.43F  100F 
RL 
+ 
- 
VODC VOAC 
Efficiency  = output Power (PDC) /Input Power (PAC) 
 (I2 
DC * RL) / [(Irms)2 * (RL + RF + Rs)] 
 ≈ 2 (Vodc)2/(Vi rms)2 ≈ 40.6% 
C2 
Dept. of ECE, KSSEM Page 3
AEC LAB MANUAL 
Where Irms = Im/2 & Im = Vm/( RL + RF + Rs) 
 
V V 
Regulation % Regulation = 100 
NL FL 
V 
FL 
Where VNL = Vo(dc) & VFL = Vo(dc) - Idc (Rf + Rs) or VFL = Idc * RL 
Rf = Diode forward Resistance & Rs = Transformer Secondary Resistance. 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram 
2. Set say 100Ω in DRB and Switch on the AC power supply 
3. Observe the wave form on CRO across the load resistor 
4. Note down RL, IDC, VODC, VINrms, and VOrms in the tabular column for different load 
resistances. Don’t set zero resistance in DRB at any time. 
5. Calculate the ripple and efficiency and Regulation for each load resistance. 
6. With C filter calculate regulation and Compare the ripple factor rtheoretical with 
rpractical for the design values of RL and Capacitor. 
TABULAR COLUMN: 
Sl. 
No. 
RL IDC 
VO 
(DC) 
VIN 
(AC) 
VO 
(AC) 
Ripple Efficiency Regulation 
Result: 
(Without filter) Ripple = rtheoretical = 1.21 rpractical =___ 
(With Filter) rtheoretical = 1/ (23 f C RL) = 0.25 for C= 100F, r practical =___ 
Ripple factor = rpractical = Vorms/ Vodc 
Efficiency = theoritical = 40.6% practical ≈ [2 (Vodc)2]/(Vi rms)2 
 
V V 
Regulation = % Regulation = 100 
NL FL 
V 
FL 
Where VNL = no load voltage = voltage across output by removing load resistance. 
VFL = Full load voltage = Voltage across output with load resistance. 
Dept. of ECE, KSSEM Page 4
AEC LAB MANUAL 
WAVEFORMS: 
20 
0 t 
VIN 
- 20 
Vo (Without Filter) 
VO 
0 t 
Vo (with filter) 
0 t 
FULL WAVE RECTIFIER 
VC 
AIM: 
To study the full wave rectifier and to calculate ripple factor and efficiency 
and Regulation with filter and without filter. 
COMPONENTS REQUIRED: 
Sl. No. Components Details Specification Qty 
1. Diodes BY127/IN4007 2 Nos. 
2. Capacitor 0.1μf, 470μf Each 1 No. 
3. Power Resistance Board (DRB) 1 No. 
4. Step down Transformer 12 V 1 No. 
5. CRO, Multimeter, Milli ammeter, Connecting Board and etc. 
THEORY: 
The center tapped full wave rectifier circuit is similar to a half wave rectifier 
circuit, using two diodes and a center tapped transformer. Both the input half cycles 
are converted into unidirectional pulsating DC. 
Dept. of ECE, KSSEM Page 5
AEC LAB MANUAL 
CIRCUIT DIAGRAM: 
FULL WAVE RECTIFIER WITHOUT FILTER CAPACITOR 
C2 
0.1UF 
A K 
BY127 
RL 
12V 
0 
12V 
Transformer 
Ammeter (0-250mA) 
A 
+ - 
VO(DC) 
A K 
BY127 
FULL WAVE RECTIFIER WITH FILTER CAPACITOR 
Step down 
AC 
(230V/50HZ) 
AC 
Step down 
Transformer 
(230V/50HZ) 
DESIGN: 
12V 
0 
12V 
Vin rms = 12V 
V V V INpeak INrms  2  16.97 
A K 
A K 
VO DC = 2Vm/ = 10.8V 
Given VO DC = 10V 
Ammeter (0-250mA) 
A 
+ - 
BY127 0.1UF 
C1 
470UF 
BY127 
IO DC = 100mA 
RL = VO DC / IO DC = 100 
Ripple = r = Vo rms / VO DC = 0.48 
Design for the filter capacitor 
Ripple = 1/ (43 f C RL) 
Given r =0 .06 
C = 1/(43 f r RL) 
VO (AC) 
C2 
RL 
+ 
- 
VO(DC) 
VO(AC) 
Dept. of ECE, KSSEM Page 6
AEC LAB MANUAL 
RL = 100 
f = 50Hz 
C = 470UF 
Efficiency  = PDC /PAC  (I2 
DC * RL) / [(Irms)2 * (RL + RF +Rs)] 
Where Irms = IM/√2 and IM = VM /(RL + RF +Rs) 
Efficiency =  ≈ (Vodc)2/(Vi rms)2 
 
V V 
Regulation % Regulation = 100 
NL FL 
V 
FL 
Note: repeat the same procedure of HWR for calculating Regulation . 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram 
2. Switch on the AC power supply 
3. Observe the wave form on CRO across the load resistor and measure the o/p 
amplitude and frequency. 
4. Note down RL, IDC, VODC , Vinac, Voac in the tabular column for different load 
resistances. 
5. Calculate the ripple and efficiency and regulation for each load resistance. 
6. Repeat the above procedure with filter capacitor. 
TABULAR COLUMN: 
Sl. 
No. 
RL IDC VO (DC) 
VIN 
(AC) 
VO (AC) Ripple Efficiency Regulation 
(Without filter) Ripple = rtheoretical = 0.48 rpractical =___ 
(With Filter) rtheoretical = 1/ (43 f C RL) = 0.06 for C= 470F, r practical =___ 
Ripple factor = rpractical = Vorms/ Vodc 
Efficiency = theoritical = 81.2% practical ≈ (Vodc)2/(Vi rms)2 
 
V V 
Regulation = % Regulation = 100 
NL FL 
V 
FL 
Where VNL = no load voltage = voltage across output by removing load resistance. 
VFL = Full load voltage = Voltage across output with load resistance. 
Dept. of ECE, KSSEM Page 7
AEC LAB MANUAL 
WAVEFORMS: 
0 t 
- 
Vo (Without Filter) 
0 
t 
Vo (with filter) 
0 t 
VIN 
VO 
VC 
Dept. of ECE, KSSEM Page 8
AEC LAB MANUAL 
BRIDGE RECTIFIER 
AIM: 
To study the bridge rectifier and to calculate ripple factor and efficiency and 
regulation with filter and without filter. 
COMPONENTS REQUIRED: 
Sl. No. Components Details Specification Qty 
1. Diodes BY127/IN4007 4 Nos. 
2. Capacitor 0.1μf, 470μf Each 1 No. 
3. Power Resistance Board (DRB) 1 No. 
4. Step down Transformer 12 V 1 No. 
5. CRO, Multimeter, Milliammeter, Connecting Board 
THEORY: 
The bridge rectifier circuit is essentially a full wave rectifier circuit, using four 
diodes, forming the four arms of an electrical bridge. To one diagonal of the bridge, 
the ac voltage is applied through a transformer and the rectified dc voltage is taken 
from the other diagonal of the bridge. The main advantage of this circuit is that it 
does not require a center tap on the secondary winding of the transformer; ac 
voltage can be directly applied to the bridge. 
The bridge rectifier circuit is mainly used as a power rectifier circuit for 
converting ac power to dc power, and a rectifying system in rectifier type ac 
meters, such as ac voltmeter in which the ac voltage under measurement is first 
converted into dc and measured with conventional meter. 
CIRCUIT DIAGRAM: 
BRIDGE RECTIFIER WITHOUT FILTER CAPACITOR 
RL 
BRIDGE 
1 
- + 
4 
3 
2 
C2 
0.1UF 
Step down 
Transformer 
AC 
(230V/50HZ) 
12V 
0 
12V 
Vo 
Ammeter(0-250mA) 
A 
+ - 
Dept. of ECE, KSSEM Page 9
AEC LAB MANUAL 
BRIDGE RECTIFIER WITH FILTER CAPACITOR 
Step down 
Transformer 
AC 
(230V/50HZ) 
DESIGN: 
2 
12V 
0 
12V 
Vin rms = 12V 
V V V INpeak INrms  2  16.97 
BRIDGE 
1 
- + 
4 
3 
Ammeter(0-250mA) 
VO DC = 2Vm/ = 10.8V 
Given VO DC = 10V and IO DC = 100mA 
RL = VO DC / IO DC = 100 
Ripple = r = Vo rms / VO DC = 0.48 
Design for the filter capacitor 
Ripple = 1/(43 f C RL) 
Given r = .06 
C = 1/(43 f r RL) 
RL = 100 and f = 50Hz 
C = 470UF 
Efficiency 
 = PDC /PAC 
= (I2 
C1 
470UF 
+ A 
- 
+ - 
DC * RL) / [(Irms)2 * (RL + RF)] OR  = 0.812/(1+2Rf/ RL) 
Where Irms = Im/2, & Im = Vm/(2Rf+RL) 
 
V V 
Regulation % Regulation = 100 
NL FL 
V 
FL 
RL 
C2 
0.1UF 
Vo 
Dept. of ECE, KSSEM Page 10
AEC LAB MANUAL 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram 
2. Switch on the AC power supply 
3. Observe the wave form on CRO across the load resistor and measure the o/p 
amplitude and frequency. 
4. Note down RL, IDC, VODC , Vinac, Voac in the tabular column for different load 
resistances. 
5. Calculate the ripple factor, efficiency and regulation for each load resistance. 
6. Repeat the above procedure with filter capacitor. 
TABULAR COLUMN: 
Sl. 
No. 
RL 
IDC VO (DC) 
VIN 
(AC) 
VO (AC) Ripple Efficiency Regulation 
Calculations are same as FWR 
WAVEFORMS: 
Vin 
20 
t 
0 
- 20 
Vo 
Vo (Without Filter) 
0 t 
Vo (with filter) 
VC 
t 
Observation and Result: 
Dept. of ECE, KSSEM Page 11
AEC LAB MANUAL 
DIODE CLAMPING CIRCUITS 
AIM: Testing of clamping circuits: positive /negative clamping. 
COMPONENTS REQUIRED: 
Sl.No Component Range Quantity 
1 Resistor 100K 1 
2 Diode 1N4001 2 
3 Capacitor 1μF 1 
4 DC variable Power supply (0-30) V 1 
5 DSO - 1 
6 Function Generator - 1 
7 Connecting Wires - 1 set 
Theory: 
Clamper is a circuit that clamps a signal to a different DC level without changing the shape of 
the applied signal. Clamping circuit introduces a DC level into an ac signal. The different types 
of clampers are positive, negative and biased clampers. A clamping network must have a 
capacitor, a diode and a load resistor. The magnitude R and C must be chosen such that time 
constant RC is large enough to ensure that the voltage across the capacitor does not discharge 
significantly during the interval when the diode is non conducting. By connecting suitable Dc 
voltage in series with the diode, clamping level can be varied. 
The clamper with a positive DC shift is called positive clamper (Negative peak clamper) and a 
clamper with a negative DC shift is called negative clamper (Positive peak clamper). 
Positive Peak Clamper: This pushes down the DC the positive peak of the input signal to level 
above or below the reference level depending upon the DC offset voltage. 
Negative Peak Clamper: This pushes down the DC the negative peak of the input signal to level 
above or below the reference level depending upon the DC offset voltage. 
Design: 
Assume C, and for the clamping to occur select R such that RC T, where T is the period of the 
input signal. 
RC T ; Assume T = 2ms, let RC = 50T = 100ms 
Let R= 100K 
C = 1μF 
Dept. of ECE, KSSEM Page 12
AEC LAB MANUAL 
Positive peak clamper (Positive Reference) 
Design: 
Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V 
8 
7 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
-7 
-8 
vi 
vo 
0 90 180 270 360 450 
a. During the positive half of the input signal diode is forward biased D = ON 
Applying KVL to the loop 
Vin – VC – VK – VR = 0 
VC = Vin– VK – VR 
VC = 5V – 0.6V – 2V 
VC = 2.4V 
b. During the negative half of the input signal diode is reverse biased D = OFF 
Applying KVL to the loop 
Vin – VC – VO = 0 
VO = Vin – VC 
When Vin = 0V VO = -2.4V 
Vin = 5V VO = 2.4V 
Vin = -5V VO = -7.6V 
The output varies between +2.4V to -7.6V 
Dept. of ECE, KSSEM Page 13
AEC LAB MANUAL 
Positive peak clamper (Negative Reference) 
Design: 
Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V 
8 
7 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
-7 
-8 
-9 
-10 
-11 
-12 
vi 
vo 
0 90 180 270 360 450 
a. During the positive half of the input signal diode is forward biased D = ON 
Applying KVL to the loop 
Vin – VC – VK – VR = 0 
VC = Vin– VK + VR 
VC = 5V – 0.6V + 2V 
VC = 6.4V 
b. During the negative half of the input signal diode is reverse biased D = OFF 
Applying KVL to the loop 
Vin – VC – VO = 0 
VO = Vin – VC 
When Vin = 0V VO = -6.4V 
Vin = 5V VO = -1.4V 
Vin = -5V VO = -11.4V 
The output varies between -1.4V to -11.4V 
Dept. of ECE, KSSEM Page 14
AEC LAB MANUAL 
Negative Peak Clamper (Negative Reference) 
Design: 
Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V 
10 
9 
8 
7 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
vi 
vo 
0 90 180 270 360 450 
a. During the negative half of the input signal diode is forward biased D = ON 
Applying KVL to the loop 
-Vin + VC + VK + VR = 0 
VC = - (-Vin – VK – VR) 
VC = - (-5V + 0.6V + 2V) 
VC = 2.4V 
b. During the positive half of the input signal diode is reverse biased D = OFF 
Applying KVL to the loop 
Vin + VC – VO = 0 
VO = Vin + VC 
When Vin = 0V VO = 2.4V 
Vin = 5V VO = 7.4V 
Vin = -5V VO = -2.4V 
The output varies between -2.4V to 7.6V 
Dept. of ECE, KSSEM Page 15
AEC LAB MANUAL 
Negative Peak Clamper (Positive Reference) 
Design: 
Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V 
12 
11 
10 
9 
8 
7 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
vi 
vo 
0 90 180 270 360 450 
a. During the negative half of the input signal diode is forward biased D = ON 
Applying KVL to the loop 
-Vin + VC + VK – VR = 0 
VC = - (Vin – VK – VR) 
VC = - (-5V + 0.6V – 2V) 
VC = 6.4V 
b. During the positive half of the input signal diode is reverse biased D = OFF 
Applying KVL to the loop 
Vin + VC – VO = 0 
VO = Vin + VC 
When Vin = 0V VO = 6.4V 
Vin = 5V VO = 11.4V 
Vin = -5V VO = 1.4V 
The output varies between 1.4V to 11.4V 
Dept. of ECE, KSSEM Page 16
AEC LAB MANUAL 
Procedure: 
1. Connect the circuit as shown in the figure. 
2. Switch on the variable DC power supply, keeping voltage knobs at minimum position 
and current knobs at maximum position and set reference voltage value. 
3. Apply square wave or sine wave as an input signal at frequency say 1KHz and voltage 
10V (p-p) 
4. Observe the input and output waveforms on the CRO/DSO. 
5. Vary the voltage and observe the clamping level of the output signal and note down the 
value of clamping level. 
Result: 
Dept. of ECE, KSSEM Page 17
AEC LAB MANUAL 
DIODE CLIPPING CIRCUITS 
AIM: 
Testing Of diode clipping (Single and Double Ended) circuits for peak clipping. 
COMPONENTS REQUIRED: 
Sl.No Component Range Quantity 
1 Resistor 10K 1 
2 Diode 1N4001 2 
3 DC variable Power supply (0-30) V 1 
4 DSO - 1 
5 Function Generator - 1 
6 Connecting Wires - 1 set 
Clippers: 
Clipping is defined as removing some part of the a.c signal without affecting the other parts of 
the a.c signal. This kind of processing is useful in wave shaping, circuit protection and 
communications. Clipper circuit are also called limiter circuit, are used to eliminate portions of 
that are above or below a specified level. A simple application of a clipper is to limit the voltage 
at the input to the electronic circuit so as to prevent the breakdown of the transistor in the circuit. 
The circuit can be used to measure the frequency of the signal, so the amplitude is not an 
important part of the signal. 
Types of clipper circuits: 
1. Series Clipper (Single ended and double ended) 
2. Parallel Clipper (Single ended and double ended) 
Design of R 
The Value of R should be chosen as geometric mean of Rf and Rr of diode. Where Rf represents 
dynamic forward resistance and Rr represents reverse resistance of the diode. 
R = √ Say, Rf = 100Ω, Rr = 1MΩ, then R= 10KΩ. 
Dept. of ECE Page 18
AEC LAB MANUAL 
PARALLEL CLIPPERS (SINGLE ENDED) 
PARALEL POSITIVE CLIPPER 
Assume 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
vi 
vo 
0 90 180 270 360 450 540 630 720 810 
Vi = 10VP-P, R = 10K, Vref = 1.4, VK = 0.6V Calculate VO. 
Case 1: Case 1: 
When Vi ≥ Vref + VK D = ON When Vi ≥ 1.4V + 0.6V D = ON 
VO = Vref + VK VO = 1.4V + 0.6V 
VO = 2V 
Case 2: Case 2: 
When Vi < Vref + VK D = OFF When Vi < 1.4V + 0.6V D = OFF 
VO = Vi VO = Vi 
TRANSFER CAHARACTERISTICS 
3 
2 
1 
0 
-6 -4 -2 0 2 4 6 
-1 
-2 
-3 
-4 
-5 
-6 
Dept. of ECE Page 19
AEC LAB MANUAL 
PARALLEL NEGATIVE CLIPPER 
Assume 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
vi 
vo 
0 90 180 270 360 450 540 630 720 810 
Vi = 10VP-P, R = 10K, Vref = 1.4, VK = 0.6V Calculate VO. 
Case 1: Case 1: 
When Vi - [Vref + VK] D = ON When Vi - [1.4V+ 0.6V] D = ON 
VO = - [Vref + VK] VO = - [1.4V+ 0.6V] 
VO = - 2V 
Case 2: Case 2: 
When Vi - [Vref + VK] D = OFF When Vi - [1.4V+ 0.6V] D = OFF 
VO = Vi VO = Vi 
TRANSFER CHARACTERISTICS 
6 
5 
4 
3 
2 
1 
0 
-6 -4 -2 0 2 4 6 
-1 
-2 
-3 
Dept. of ECE Page 20
AEC LAB MANUAL 
SERIES POSITIVE CLIPPERS 
Assume 
6.00 
5.00 
4.00 
3.00 
2.00 
1.00 
0.00 
-1.00 
-2.00 
-3.00 
-4.00 
-5.00 
-6.00 
Vi 
VO 
0 90 180 270 360 450 540 630 720 810 
Vi = 10VP-P, R = 10K, Vref = 2V, VK = 0.6V Calculate VO. 
Case 1: Case 1: 
When Vi [VR - VK] D = ON When Vi [2V-0.6V] D = ON 
VO = Vi + VK VO = - 4.3V 
Case 2: Case 2: 
When Vi > [VR - VK] D = OFF When Vi > [VR - VK] D = OFF 
VO = Vref VO = 2V 
TRANSFER CHARACTERISTICS 
3.00 
2.00 
1.00 
0.00 
-6.00 -4.00 -2.00 0.00 2.00 4.00 6.00 
-1.00 
-2.00 
-3.00 
-4.00 
-5.00 
Dept. of ECE Page 21
AEC LAB MANUAL 
SERIES NEGATIVE CLIPPER 
Assume 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
VI 
VO 
0 90 180 270 360 450 540 630 720 810 
Vi = 10VP-P, R = 10K, Vref = 2V, VK = 0.6V Calculate VO. 
Case1: 
When Vi -[ VR - VK] D = ON 
VO = Vi - VK 
Case 2: 
When Vi -[ VR - VK] D = ON 
VO = VR 
TRANSFER CHARACTERISTICS 
6.00 
5.00 
4.00 
3.00 
2.00 
1.00 
0.00 
-6.00 -4.00 -2.00 0.00 2.00 4.00 6.00 
-1.00 
-2.00 
-3.00 
Dept. of ECE Page 22
AEC LAB MANUAL 
PARALLEL CLIPPING (DOUBLE ENDED) 
Assume 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
vi 
vo 
0 90 180 270 360 450 540 630 720 810 
Vi = 10VP-P, R = 10K, Vref1 = 1.4V, Vref2 = 1.4V, VK = 0.6V Calculate VO. 
Case1: Case 1: 
When Vi [VRef1 + VK] When Vi [1.4V + 0.6V] 
VO = [VRef1 + VK] VO = 2V 
Case 2: Case 2: 
When Vi [VRef2 + VK] When Vi [1.4V + 0.6V] 
VO = - [VRef2 + VK] VO = - 2V 
Case 3: Case 3: 
When - [VRef2 + VK] Vi < [Vref1 + VK] When - [1.4V + 0.6V] Vi < [1.4V + 0.6V] 
VO = Vi VO = Vi 
TRANSFER CHARACTERISTICS 
3 
2 
1 
0 
-6 -4 -2 0 2 4 6 
-1 
-2 
-3 
Dept. of ECE Page 23
AEC LAB MANUAL 
SERIES CLIPPING (DOUBLE ENDED) 
Assume 
6 
5 
4 
3 
2 
1 
0 
-1 
-2 
-3 
-4 
-5 
-6 
vi 
vo 
0 90 180 270 360 450 540 630 720 810 
Vi = 10VP-P, R = 10K, Vref1 = 1.4V, Vref2 = 1.4V, VK = 0.6V Calculate VO. 
Case 1: Case 1: 
When Vi [VRef1 + VK] D = ON When Vi [2V + 0.6V] D = ON 
VO = Vi - VK - VR VO = 5V - 0.6V - 1.4V VO = 3V 
Case 2: Case 2: 
When Vi [VRef1 + VK] D = OFF When Vi [VRef1 + VK] D = OFF 
VO = Vi - VK - VR VO = -5V + 0.6V + 1.4V 
VO = - 3V 
TRANSFER CHARACTERISTICS 
4 
3 
2 
1 
0 
-6 -4 -2 0 2 4 6 
-1 
-2 
-3 
-4 
Dept. of ECE Page 24
AEC LAB MANUAL 
RC COUPLED BJT AMPLIFIER 
AIM: 
Wiring of RC coupled single stage BJT amplifier and determination of the gain frequency 
response, input and output impedance. 
COMPONENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Transistor SL-100 1 
2 Resistors 22K,2.2K,4.7K,470Ω 1 
3 Capacitors 0.47μF,47μF 
0.47 μF =2 
47 μF=1 
4 Variable power supply (0-30)V 1 
5 DSO - 1 
6 Function Generaator - 1 
7 Connecting wires - 1 set 
THEORY: 
A common emitter amplifier is defined as an electronic circuit with an ac input voltage applied 
across the base and emitter pins of a bipolar junction transistor with the output voltage taken as 
the voltage from the collector pin to ground. As the name suggests, the emitter is connected to a 
reference ground. RC coupled amplifier is the one which amplifies the given small signal. 
Basically it is the multi stage amplifier which usually has two or more stages. 
In each stage, there will be there would be a CE amplifier present whose output is given as the 
input to the next stage. The function of the input capacitor is to block the base from any DC shift 
caused by the input signal. Allowing a DC shift to be felt at the base would continuously change 
the Q point of the amplifier, resulting in erratic effects on the amplifier’s output voltage. 
The input capacitor must allow all the ac signal components through. The function of the output 
capacitor is to block the collector from DC shift that might be caused by the load. Failure to do 
so would result in a Q-point shift. The bypass capacitor is used to short out the emitter resistor 
during ac operation. 
The two values of frequency for which the voltage gain of about 0.707 times the peak voltage 
gain are called the low and high frequency roll-off. These correspond to the minimum and 
maximum frequencies for the power carried by the signal is at most a factor of two smaller than 
the maximum. Hence, the difference between the two frequencies is called the half power 
bandwidth. 
Dept. of ECE, KSSEM Page 25
AEC LAB MANUAL 
CIRCUIT DIAGRAM: 
Amplifier Design: 
Select transistor SL-100 having the following specifications IE = IC = 2mA, β = 100, VCE = 5V 
Selection of RE 
VCC = 10V; VE = 
; VE = 
= 1V 
VE = IERE; RE = 
; RE = 
= 0.5K; Select RE = 470Ω; 
Selection of RC: 
VCE = 
; VCE = 
= 5V 
VCE = ICRC + VCE + VE 
RC = 
RC = 2KΩ; Select RC = 2.2K Ω; 
Dept. of ECE, KSSEM Page 26
AEC LAB MANUAL 
Selection of R1 and R2: 
VB = VBE + VE; VB = 1.7V; 
VB = 
1.7V = 
10R2 = 1.7R1 + 1.7 R2; R1 = 4.8R2; 
Choose R2 = 4.7KΩ; R1 = 4.8 4.7K; 
R1 = 22.56KΩ 
Choose R1 = 22KΩ 
Selection of bypass capacitor CE: 
Let XCE = 
; At f = 100Hz, 
= 
CE = 59 F; Choose CE = 47 F 
Selection of Coupling Capacitors: 
Select CC1 = CC2 = 0.47 F 
Procedure: 
1. Connections are made as shown in the circuit diagram. 
2. The input voltage Vin is adjusted to a convenient value (10mV to 50mV) within the 
distortion less limit and value must be kept constant throughout the experiment. 
3. Frequency of the input signal is varied from 100Hz to 2MHz in steps and at each step, 
corresponding output VO is noted down. 
4. All readings are tabulated and graph of voltage gain in dB Vs frequency is drawn on a 
Semi-log sheet. 
5. 3dB bandwidth is determined from the frequency response curve. 
Dept. of ECE, KSSEM Page 27
AEC LAB MANUAL 
TABULAR COLUMN: 
Frequency in Hz VO in Volts Gain in dB= 20log10(VO/Vin) 
100Hz 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
2MHz 
Input Impedance 
Procedure: 
1. A DRB is connected in series with the input as shown in the figure. 
2. In the mid frequency region (with constant gain) with zero resistance (all the knobs of the 
DRB in zero position) the output is measured. 
3. Now the DRB resistance is increased till the output voltage falls to half of the initial 
value. 
4. The corresponding DRB value gives the input impedance of the circuit. 
Dept. of ECE, KSSEM Page 28
AEC LAB MANUAL 
Output impedance 
Procedure: 
1. A DRB is connected in series with the input as shown in the figure. 
2. In the mid frequency region (with constant gain) with maximum resistance (all the knobs 
of the DRB in maximum position) the output is measured. 
3. Now the DRB resistance is decreased till the output voltage falls to half of the initial 
value. 
4. The corresponding DRB value gives the output impedance of the circuit 
RESULT: 
Gain AV 
Bandwidth 
Input impedance Zi 
Output impedance ZO 
Dept. of ECE, KSSEM Page 29
AEC LAB MANUAL 
HARTLEY OSCILLATOR 
AIM: Testing for the performance of BJT Hartley oscillator for fo =100KHz. 
COMPONENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Transistor SL-100 1 
2 Resistors 22K,2.2K,4.7K,1K,470Ω, 1K POT 1 
3 Capacitors 0.47μF,47μF 
0.47 μF =2 
47 μF=1 
4 Variable power supply (0-30)V 1 
5 DSO - 1 
6 Function Generaator - 1 
7 Connecting wires - 1 set 
8 Decade Inductance box - 1 
9 Decade Capacitane box - 1 
THEORY: 
When the collector supply voltage Vcc is switched on, collector current starts rising and charges 
the capacitor C. When this capacitor is fully charged, it discharges through coils L1 and L2, 
setting up damped harmonic oscillations in the tank circuit. The oscillatory current in the tank 
circuit produces an a.c. voltage across L1 which is applied to the base emitter junction of the 
transistor and appears in the amplified form in the collector circuit. 
Feedback of energy from output (collector emitter circuit) to input (base-emitter circuit is) 
accomplished through auto transformer action. The output of the amplifier is applied across the 
inductor L1, and the voltage across L2 forms the feedback voltage. The coil L1, is inductively 
coupled to coil L2, and the combination acts as an auto-transformer. 
This energy supplied to the tank circuit overcomes the losses occurring in it. Consequently the 
oscillations are sustained in the circuit. The energy supplied to the tank circuit is in phase with 
the generated oscillations. The phase difference between the voltages across L1 and that across 
L2 is always 180° because the centre of the two is grounded. A further phase of 180° is 
introduced between the input and output voltages by the transistor itself. Thus the total phase 
shift becomes 360O (or zero), thereby making the feedback positive or regenerative which is 
essential for oscillations. 
Dept. of ECE, KSSEM Page 30
AEC LAB MANUAL 
CIRCUIT DIAGRAM: 
Amplifier design: 
VCE = 5V , IC = 2mA, VCC = 2VCE = 10V 
VRE = 
×VCC = 
×10 = 1V 
RE = 
= 
= 500Ω. Choose 470 Ω. 
RC = 
= 2K. Choose 2.2KΩ. 
Assume hfe = 50 
IB = 
= 0.04mA = 40μA 
VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V 
Dept. of ECE, KSSEM Page 31
AEC LAB MANUAL 
R2 = 
= 
= 
= 
= 4.7KΩ. 
R1 = 
= 
= 
= 
= 22KΩ. 
Design of Tank Circuit: 
Let fo = 100KHz 
Choose L1 = 200 μH, L2 = 600 μH 
Choose fo = 
√ 
Calculate C = ? 
C = 330 μF 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram. 
2. Measure the DC conditions. 
3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output. 
4. Note down the amplitude and frequency of the output wave and frequency haas to match 
with the theoritical frequency. 
RESULT: 
Frequency = Hz. 
Amplitude = V. 
Dept. of ECE, KSSEM Page 32
AEC LAB MANUAL 
COLPITTS OSCILLATOR 
AIM: Testing for the performance of BJT Colpitts oscillator for fo =100KHz. 
COMPONENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Transistor SL-100 1 
2 Resistors 22K,2.2K,47K,1K, 470Ω,1K, POT 1 
3 Capacitors 0.47μF,47μF 
0.47 μF =2 
47 μF=1 
4 Variable power supply (0-30)V 1 
5 DSO - 1 
6 Function Generaator - 1 
7 Connecting wires - 1 set 
8 Decade Inductance box - 1 
9 Decade Capacitance box - 1 
THEORY: 
The Colpitt’s oscillator is designed for generation of high frequency sinusoidal oscillations (radio 
frequencies ranging from 10 KHz to 100MHz). They are widely used in commercial signal 
generators up to 100MHz. Colpitt's oscillator is same as Hartley oscillator except for one 
difference. Instead of using a tapped inductance, Colpitt's oscillator uses a tapped capacitance. 
When the collector supply voltage Vcc is switched on, collector current starts rising and charges 
the capacitors C1 and C2. When these capacitors are fully charged, they discharge through coil L 
setting up damped harmonic oscillations in the tank circuit. The oscillatory current in the tank 
circuit produces an a.c. voltage across C1, C2. The oscillation across C2 is applied to base-emitter 
junction of the transistor and appears in the amplified form in the collector circuit and 
overcomes the losses occurring in the tank circuit. 
The feedback voltage (across the capacitor C2) is 180° out of phase with the output voltage 
(across the capacitor C1), as the centre of the two capacitors is grounded. A phase shift of 180° is 
produced by the feedback network and a further phase shift of 180° between the output and input 
voltage is produced by the CE transistor. Hence, the total phase shift is 360° or 0°, which is 
essential for sustained oscillations, as per, the Barkhausen criterion. 
Dept. of ECE, KSSEM Page 33
AEC LAB MANUAL 
CIRCUIT DIAGRAM: 
AMPLIFIER DESIGN: 
VCE = 5V , IC = 2mA, VCC = 2VCE = 10V 
VRE = 
×VCC = 
×10 = 1V 
RE = 
= 
= 500Ω. Choose 470 Ω. 
RC = 
= 2K. Choose 2.2KΩ. 
Assume hfe = 50 
IB = 
= 0.04mA = 40μA 
VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V 
Dept. of ECE, KSSEM Page 34
AEC LAB MANUAL 
R2 = 
= 
= 
= 
= 4.7KΩ. 
R1 = 
= 
= 
= 
= 22KΩ. 
DESIGN OF TANK CIRCUIT: 
Let fo = 100KHz 
Choose C1 = C2 = 1000pF 
fo = 
√ 
Calculate L = ? 
L= 5mH 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram. 
2. Measure the DC conditions. 
3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output. 
4. Note down the amplitude and frequency of the output wave and frequency haas to match 
with the theoritical frequency. 
RESULT: 
Frequency = Hz. 
Amplitude = V. 
Dept. of ECE, KSSEM Page 35
AEC LAB MANUAL 
BJT-CRYSTAL OSCILLATOR 
AIM: Testing for the performance of the BJT- crystal oscillator for fo > 500KHz. 
COMPONENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Transistor SL-100 1 
2 Crystal 2MHz 1 
3 Resistors 22K, 2.7K, 47K, 470Ω, 1K POT 1 
4 Capacitors 0.47μF, 47 μF 
0.47 μF =2 
47 μF=1 
5 Variable power supply (0-30)V 1 
6 Function Generator - 1 
7 DSO - 1 
8 Connecting wires - 1set 
THEORY: 
A crystal oscillator is basically a tuned oscillator using a pizeoelectric crystal asa resonant 
circuit. The crystal has a greatest stability in holding consant charge at whatever frequency the 
crystal is originally cut to operate. Crystal oscillators are used whenever great stability is 
required, such as communication, transmitters and recievers. 
Characteristics of a Quartz crystal 
A quartz crystal exihibits the property that whenever mechanical stress is applied across one set 
of its faces, a difference os potential develops acoss the opposite faces. This property of a crystal 
is called pizeoelectric effect. Similarly, a voltage applied across one set of faces of the crystal 
causes mechanical distortion in the cryatal shape. When alternating voltage is applied to a 
crystal, mechanical vibrations are set up- these vibrations having a natural resonating frequency 
dependent on the crystal. 
The inductor L and the cappacitor C represents electrical equivalents of crystal mass and 
compliance respectively, whereas resistance R is an electrical equivalent of the crystal structures 
internal friction. The shunt capacitance CM represents the capacitance due to mechanical 
mounting of the crystal. Because the crystal loses, represented by R, are small, the equivalent 
cryatal Q factor is high typically 20,000. Values of Q up to almost 106 can be achieved by using 
crystals. The crystal has two resonant frequencies. One resonant condition occurs when the 
reactances of the series RLC leg are equal. 
Depat. Of ECE, KSSEM Page 36
AEC LAB MANUAL 
CIRCUIT DIAGRAM: 
Amplifier design: 
VCE = 5V , IC = 2mA, VCC = 2VCE = 10V 
VRE = 
×VCC = 
×10 = 1V 
RE = 
= 
= 500Ω. Choose 470 Ω. 
RC = 
= 2K. Choose 2.2KΩ. 
Assume hfe = 50 
IB = 
= 0.04mA = 40μA 
VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V 
Depat. Of ECE, KSSEM Page 37
AEC LAB MANUAL 
R2 = 
= 
= 
= 
= 4.7KΩ. 
R1 = 
= 
= 
= 
= 22KΩ. 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram. 
2. Measure the DC conditions. 
3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output. 
4. Note down the amplitude and frequency of the output wave and frequency haas to match 
with the theoritical frequency. 
RESULT: 
Frequency = Hz. 
Amplitude = V. 
Depat. Of ECE, KSSEM Page 38
AEC LAB MANUAL 
RC PHASE SHIFT OSCILLATOR 
AIM: To generate the sinusoidal waveform of RF range using RC phase shift oscillator. 
COMPONENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Transistor SL-100 1 
2 Resistors 22K,2.2K,47K,1K,1K and 10K POT 
2.2K=4, 
Others=1 
3 Capacitors 0.47μF, 0.02μF 
0.47 μF =2 
47 μF=1 
4 Variable power supply (0-30)V 1 
5 DSO - 1 
6 Function Generator - 1 
7 Connecting wires - 1 set 
. 
THEORY: 
The RC Oscillator which is also called a Phase Shift Oscillator produces a sine wave output 
signal using regenerative feedback from the resistor-capacitor combination. This regenerative 
feedback from the RC network is due to the ability of the capacitor to store an electric charge, 
(similar to the LC tank circuit). This resistor-capacitor feedback network can be connected as 
shown in the figure to produce a leading phase shift (phase advance network) or interchanged to 
produce a lagging phase shift (phase retard network) the outcome is still the same as the sine 
wave oscillations only occur at the frequency at which the overall phase-shift is 360o. By varying 
one or more of the resistors or capacitors in the phase-shift network, the frequency can be varied 
and generally this is done using a 3-ganged variable capacitor. 
Since the resistor-capacitor combination in the RC Oscillator circuit also acts as an attenuator 
producing an attenuation of -1/29th (Vo/Vi = β) per stage, the gain of the amplifier must be 
sufficient to overcome the losses and in our three mesh network above the amplifier gain must be 
greater than 29. The loading effect of the amplifier on the feedback network has an effect on the 
frequency of oscillations and can cause the oscillator frequency to be up to 25% higher than 
calculated. Then the feedback network should be driven from a high impedance output source 
and fed into a low impedance load such as a common emitter transistor amplifier but better still 
is to use an operational amplifier as it satisfies these conditions perfectly. 
Dept. of ECE, KSSEM Page 39
AEC LAB MANUAL 
CIRCUIT DIAGRAM 
AMPLIFIER DESIGN: 
VCE = 5V , IC = 2mA, VCC = 2VCE = 10V 
VRE = 
×VCC = 
×10 = 1V 
RE = 
= 
= 500Ω. Choose 470 Ω. 
RC = 
= 2K. Choose 2.2KΩ. 
Assume hfe = 50 
IB = 
= 0.04mA = 40μA 
Dept. of ECE, KSSEM Page 40
AEC LAB MANUAL 
VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V 
R2 = 
= 
= 
= 
= 4.7KΩ. 
R1 = 
= 
= 
= 
= 22KΩ. 
FEEDBACK CIRCUIT DESIGN: 
If the frequency for the RC phase shift oscillator is say, 1 KHz, Then, 
fo = 
√ = 1KHz 
Where k 
, Choose k=1, so RC = R = 2.2KΩ. Substituting these values in the frequency 
equation, we get C = 0.022μF. 
The current gain of the transistor, β 4K + 23 + 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram. 
2. Measure the DC conditions. 
3. Observe the sinusoidal waveform output and calculate the frequency using CRO/DSO. 
4. Measure the phase difference between the output and at points A,B,C. 
5. To observe the phase difference between the signals connect the output of the amplifier to 
channel1 of the CRO/DSO and connect A or B or C to channel2 of the CRO/DSO. 
6. Go to X-Y mode to observe the Lissajous figure, and also to measure the phase difference 
between the output and A or B or C. 
RESULT: 
Dept. of ECE, KSSEM Page 41
AEC LAB MANUAL 
VOLTAGE SERIES FEEDBACK AMPLIFIER 
AIM: 
To conduct an experiment on two-stage BJT small signal amplifier (with and without feedback). 
COMPONENTS AND EQUIPMENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Transistor SL-100 1 
2 Resistors 22K,10K,2.2K,4.7K,470Ω,390 Ω,100 Ω 2 
3 Capacitors 0.47μF,47μF 
0.47 μF =3 
47 μF=2 
4 Variable power supply (0-30)V 1 
5 DSO - 1 
6 Function Generaator - 1 
7 Connecting wires - 1 set 
THEORY: 
Feedback plays an important role in electronic circuits and the basic parameters such as input 
impedance, output impedance, voltage or current gain and band width, may be altered 
considerably in a desired direction by the use of feedback for a given amplifier. In any of the 
feedback amplifiers, a part of the output signal is taken from the output of the amplifier and is 
combined with the normal input signal and thereby the feedback is achieved. If the signal 
feedback is aid the input signal, then it is said to positive feedback and if it is opposing, it is said 
to be the negative feedback. Positive feedback is used in oscillators and negative feedback is 
used wherever the gain has to be stabilized, bandwidth is to be increased and distortion has to be 
reduced. There are four types of negative feedback amplifiers depending the input signal and 
output signal that is feedback. 
1. Voltage- series feedback 
2. Voltage-shunt feedback 
3. Current-series feedback 
4. Current-shunt feedback 
Voltage-Series Feedback Amplifier: In 
this case, the part of the output voltage for the amplifier is feedback, which is in series opposition 
with input. This reduces the gain, but stabilizes it. Also the input impedance and bandwidth 
increases and output impedance decreases. 
Dept. of ECE Page 42
AEC LAB MANUAL 
CIRCUIT DIAGRAM 
Fig: Voltage Series amplifier without feedback 
Fig: Voltage Series amplifier with feedback 
Dept. of ECE Page 43
AEC LAB MANUAL 
Amplifier design: 
It remains same as given for RC-coupled amplifier. 
Here β = 
= 
= 
, called as feedback factor. 
Select RE = 390Ω; RE11 = 100Ω; RF = 10KΩ 
PROCUDURE: 
1. Connect the circuit as shown in the figure. Set the signal generator amplitude to 10mV 
peak to peak sine waveform and observe the input and output signals of the circuit 
simultaneously on the CRO/DSO. 
2. By varying the frequency of the input from 100Hz to 2MHz range correspondingly note 
down the output voltage. 
3. Plot the gain in dB against frequency in a semi log graph sheet. 
4. From the graph determine the bandwidth. 
5. Repeat the same procedure for with feedback case also. 
6. Calculate the input and output impedance in both the cases. 
TABULAR COLUMN 
F in Hz VO(P-P) in V AV = 
Voltage gain in 
dB = 10log10AV 
Dept. of ECE Page 44
AEC LAB MANUAL 
RESULT: 
Gain AV without Feedback 
Gain AV with Feedback 
Bandwidth without Feedback 
Bandwidth with Feedback 
Input impedance Zi without feedback 
Input impedance Zi with feedback 
Output impedance ZO without feedback 
Output impedance ZO with feedback 
Dept. of ECE Page 45
AEC LAB MANUAL 
THEVENIN’S AND MAXIMUM POWER TRANSFER THEOREM 
AIM: 
To verify Theveinin’s theorem. 
COMPONENTS REQUIRED: 
Sl. No Components Range Quantity 
1 Resistors 1K 4 
2 DC variable Power supply (0-30) V 1 
3 Multimeter - 1 
4 Connecting Wires - 1 Set 
5 DRB - 1 
THEVENIN’S THEOREM: 
Statement: “Any linear, bilateral network containing energy sources and impedances can be 
replaced with equivalent circuit consisting of a Voltage Source in series with Impedance”. 
THEORY: 
M Leon Thevenin a French engineer in 1863 developed the most important theorem of all 
network theorems. Using Thevenin’s theorem any complex network can be replaced by a simple 
equivalent circuit. The new simple single loop equivalent circuit enables us to make rapid 
calculations of the current, voltage and power delivered to the load by the original network. It 
also helps us to find the best value of load resistance needed for a particular application. 
CIRCUIT DIAGRAM: 
Given complex circuit 
Fig. (1) 
Measure the voltage across Load Resistance RL, i.e. across A and B and call that voltage as V1. 
V1 =V. 
Dept. of ECE, KSSEM Page 46
AEC LAB MANUAL 
Step 1: Equivalent Circuit to find VTH by opening Load Resistance RL across A and B 
Fig. (2) 
Measure the voltage across A and B and call that voltage as VTH. 
VTH =______V. 
Step 2: Equivalent Circuit to find RTH by removing RL across A and B and shorting the 
supply voltage. 
Fig. (3) 
Measure the Resistance across A and B and call that Resistance as RTH. 
RTH =_____Ω. 
Step3: Thevenin’s Equivalent circuit 
Fig. (4) 
Dept. of ECE, KSSEM Page 47
AEC LAB MANUAL 
Measure the voltage across A and B and call that voltage as V2. 
V2 =_____V. 
If the voltage,V1 = V2, then Thevinin’s theorem is verified. 
THEORETICAL CALCULATION: 
VTH= 
RTH = 
+R2 
PROCEDURE: 
1. Connections are made as shown in fig. (1). 
2. Keep the voltage knobs at minimum position and Current knobs at Maximum position 
and then switch on the power supply and adjust the voltage to say 5 Volts. 
3. Measure the voltage across RL and note down as V1 from fig. (1). 
4. To measure VTH, Open circuits the load resistor RL as shown in fig. (2), measure the 
voltage across terminal A and B, call that voltage as VTH. 
5. To find the Thevinin’s impedance (RTH) measure the resistance between the terminals A 
and B after shorting the supply voltage as shown in fig. (3). 
6. Thevinin’s equivalent circuit connections are made by setting supply voltage to VTH and 
decade resistance box to RTH and connect back the load resistor RL across A and B as 
shown in Fig. (4). 
7. Now measure the Voltage across load resistor RL with respect to Thevinin’s equivalent 
circuit. i.e. V2 
8. Verify the voltages V1 and V2. 
RESULT: 
Voltage across the load resistor RL with respect to complex circuit = V. 
Voltage across the load resistor RL with respect to Thevinin’s equivalent circuit = V. 
Dept. of ECE, KSSEM Page 48
AEC LAB MANUAL 
MAXIMUM POWER TRANSFER THEOREM 
AIM: To verify maximum power transfer theorem. 
COMPONENTS REQUIRED: 
Sl No Components Range Quantity 
1 Resistors 1.5 K 1 
2 DC variable Power 
supply 
(0-30) V 1 
3 Multimeter - 1 
4 Connecting Wires - 1 Set 
5 DRB - 1 
MAXIMUM POWER TRANSFER THEOREM: 
Statement: Maximum power is delivered from a network to a load when the load resistance is 
equal to the Thevenin’s resistance of the network. 
THEORY: 
In many practical applications a circuit is designed to supply power to the load. For example in 
communication systems, antennas supply power to receivers, audio amplifiers supply power to 
load speakers, transmitters supply power to loads. Maximum power transfer theorem plays an 
important role in matching circuit’s loads. 
CIRCUIT DIAGRAM: 
Given complex circuit 
Fig. (1): Complex Network 
Dept. of ECE, KSSEM Page 49
AEC LAB MANUAL 
Thevinin’s Equivalent circuit 
Fig. (2): Thevinin’s Network 
THEORITICAL CALCULATION: 
VTH = 
= 5V 
RTH = 
= 500Ω 
PROCEDURE: 
1. The resistance value in DRB is varied and the Voltage is noted down. 
2. Connections are made as shown in the figure. 
3. The power P is calculated using P= V2/RL. 
4. A graph of load resistance Vs Power is plotted. 
5. The maximum power occurs when RL = RS. 
POWER Vs LOAD RESISTANCE CURVE: 
P 
Fig (3): Graph of Power v/s RL 
Dept. of ECE, KSSEM Page 50
AEC LAB MANUAL 
TABULAR COLUMN 
RL in Ω VO in Volts P = V2/RL (mW) 
100 Ω 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
1K Ω 
RESULT: 
Dept. of ECE, KSSEM Page 51
AEC LAB MANUAL 
CHARACTERISTICS OF RESONANT CIRCUITS 
AIM: To obtain the frequency response of RLC series and parallel resonant circuits and hence to 
determine bandwidth and Q-factor. 
COMPONENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Resistors 1KΩ 1 
2 DSO - 1 
3 Decade Capacitance Box - 1 
4 Decade Inductance Box - 1 
5 Function Generator - 1 
6 Connecting wires - 1 set 
. 
THEORY: 
In a circuit containing capacitive and inductive components, the impedance of the circuit varies 
as the applied voltage’s frequency is varied. At one point of frequency, the impedance offered by 
the circuit will be purely resistive and so the current in the circuit and applied voltage will be in 
phase. This phenomenon is called resonance and the frequency which causes resonance is called 
resonant frequency. 
SERIES RESONANCE CIRCUIT: 
Dept. of ECE, KSSEM Page 52
AEC LAB MANUAL 
DESIGN: 
fo = 
√ 
Let fo = 800Hz 
Assume R = 1KΩ 
C = 0.1μF 
Calculate L value 
L = 395.7mH 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram. 
2. AC supply is switched on. Input voltage is adjusted to 10VP-P. 
3. The frequency is gradually varied from 100Hz to 2KHz. Different values of ‘f’ using 
DSO and voltage is noted down. The results are tabulated in the tabular column. 
4. Frequency response i.e a graph of frequency Vs current is drawn. 
5. From the graph, resonant frequency fO is noted down at which current is maximum. 
6. Lower half frequency and upper half frequency are noted down corresponding to a 
current of IO/√ . Bandwidth = f2 – f1 = Hz. 
7. Q-factor = f2/(f2-f1). 
TABULAR COLUMN 
Frequency in 
Hz 
Output Voltage VO 
(V) 
Dept. of ECE, KSSEM Page 53
AEC LAB MANUAL 
FREQUENCY RESPONSE CURVE 
VO (V) 
F (Hz) 
Fig: Graph of Voltage Vs Frequency 
RESULT: 
Resonant Frequency = 
Bandwidth = 
Upper and lower half frequencies = 
Q-factor = 
Dept. of ECE, KSSEM Page 54
AEC LAB MANUAL 
PARALLEL RESONANCE CIRCUIT: 
: 
DESIGN: 
fo = 
√ 
Let fo = 800Hz 
Assume R = 1KΩ 
C = 0.1μF 
Calculate L value 
L = 395.7mH 
PROCEDURE: 
1. Connections are made as shown in the circuit diagram. 
2. AC supply is switched on. Input voltage is adjusted to 10VP-P. 
3. The frequency is gradually varied from 100Hz to 2KHz. Different values of ‘f’ using 
DSO and voltage is noted down. The results are tabulated in the tabular column. 
4. Frequency response i.e a graph of frequency Vs current is drawn. 
5. From the graph, resonant frequency fO is noted down at which current is maximum. 
6. Lower half frequency and upper half frequency are noted down corresponding to a 
current of IO/√ . Bandwidth = f2 – f1 = Hz. 
7. Q-factor = f2/(f2-f1). 
Dept. of ECE, KSSEM Page 55
AEC LAB MANUAL 
TABULAR COLUMN 
Frequency in 
Hz 
Output Voltage VO 
(V) 
FREQUENCY RESPONSE CURVE: 
VO(V) 
F(Hz) 
Fig: Graph of Voltage Vs Frequency 
Dept. of ECE, KSSEM Page 56
AEC LAB MANUAL 
RESULT: 
Resonant Frequency = 
Bandwidth = 
Upper and lower half frequencies = 
Q-factor = 
Dept. of ECE, KSSEM Page 57
AEC LAB MANUAL 
BJT DARLINGTON EMITTER FOLLOWER 
AIM: 
Wiring of BJT Darlington emitter follower with and without Bootstrapping and determination of 
the gain, input impedance and output impedance. 
COMPONENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Resistors 1K, 220K, 330K, 4.7K 1 
2 Capacitors 0.47μF 2 
3 Transistor SL-100 2 
4 D.C Variable Power supply (0-30)V 1 
5 Multimeter - 1 
6 Connecting Wires - 1set 
7 Decade Resistance box - 1 
THEORY: 
In emitter follower, an input signal is applied to the base and the output is taken across the 
emitter. The emitter follower has reasonably high input impedance and may be used whenever 
impedance up to about 500K is needed. For higher input impedance, we may use two transistors 
to form Darlington pair. The output voltage is always less than the input voltage due to drop 
between the base and emitter. However, the voltage gain is approximately unity. In addition the 
output voltage is in phase with the input voltage. Hence it is said to follow the input voltage with 
an in phase relationship. This accounts for the terminology ’Emitter Follower’. The collector is at 
ac ground; therefore the circuit is actually common collector amplifier. This circuit presents high 
input impedance at the input and low output impedance at the output. It is therefore frequently 
used for impedance matching purposes, where load impedance is matched to source impedance 
for maximum signal transfer. 
The Darlington connection shown is a connection of two transistors which results in a current 
gain that is the product of the current gains of the individual transistors. Hence the Darlington 
pair operates as one ‘Super Beta Transistor’ offering a very high current gain. The Darlington 
Emitter follower is a CC configuration but has the following characteristics. 
Voltage Gain = Almost Unity 
Current Gain = Very High, a few thousands 
Input Impedance = High, hundreds of KΩ 
Output Impedance = Low, tens of Ohms 
Dept. of ECE, KSSEM Page 58
AEC LAB MANUAL 
Bootstrapped Emitter Follower: To overcome the decrease in the input impedance due to the 
biasing resistors, the input circuit of fig.1 is modified by the addition of the resistor R3 and 
capacitor in between R1 and R2 as shown in fig.2. The capacitance is chosen large enough to act 
as a short circuit at the lowest frequency of operation. Hence the bottom of R3 is effectively 
connected to output and the top of R3 is at the input. Using the concept of Miller’s theorem, the 
biasing arrangement R1, R2, R3 represents the input impedance of R3/(1-AV), which is very very 
high as AV is almost equal to 1. The term bootstrapping arises from the fact that, if one end of the 
resistor of R3 changes in voltage, the other end of R3 moves through the same potential 
difference, it is as if R3 is pulling itself by its bootstraps. The output impedance in this case will 
be almost equal to that of Darlington circuit 
DESIGN: 
Let Q-point = (VCE2, IC2) = (5V, 5mA) 
Let VCC = 2 VCE2 = 10V 
RE = 
= 
= 
= 
RE = 1KΩ. 
Consider β1 = β2 = β = 50. 
IB2 = IE1 = 
= 0.1mA 
Therefore, IB1 = 
= 
= 
= 0.002mA. 
Applying KVL to B-E loop 
V2 = 0.6V + 0.6V + 5V = 6.2V 
R2 = 
= 
= 344KΩ. Select 330KΩ 
R1 = 
= 
= 190KΩ. Select 220KΩ 
Dept. of ECE, KSSEM Page 59
AEC LAB MANUAL 
CIRCUIT DIAGRAM: 
Fig: Darlington Emitter follower without bootstrap 
Fig: Darlington Emitter follower with bootstrap 
Dept. of ECE, KSSEM Page 60
AEC LAB MANUAL 
PROCEDURE: 
1. Place the components on the bread/spring board as shown in the figure. 
2. Connect the signal generator and apply a sine wave of peak-to-peak amplitude 1V, 1KHz. 
Connect the input and output of the circuit to the two channels of the CRO and observe 
the waveforms. 
3. Gradually increase the input signal until the signal gets distorted. When this happens 
slightly reduce the input signal amplitude such that output is maximum undistorted 
signal. Then measure the amplitude of the input and output waveform. Calculate the 
voltage gain. 
4. Connect input and output of the circuit to the two channels of the CRO/DSO and observe 
the waveforms. Note down the corresponding waveform on the graph. 
5. Find the input and output impedance per given procedure. 
6. Connect the bootstrap circuit and make the necessary changes as per figure. 
7. Find the input and output impedance with this circuit. 
Input Impedance Zi 
1. Adjust the input signal peak-peak in such that the output sine wave is not clipped. 
2. Note down this value of the input Vin.(Let the frequency of the input signal be around 
2KHz) 
3. Note down the peak-peak amplitude of the corresponding output VO. 
4. Connect a DRB (with zero resistance) in series with the function generator. 
5. Increase the resistance in DRB and observe the magnitude of the output VO 
simultaneously on the CRO/DSO. 
6. When the magnitude of the output VO is reduced to half of its original value, stop varying 
the potentiometer further and remove the DRB from the circuit. 
7. Measure the value of resistance in DRB and this is measured value will be the input 
impedance of the circuit. 
Dept. of ECE, KSSEM Page 61
AEC LAB MANUAL 
Output Impedance ZO 
1. Adjust the input signal peak-peak in such that the output sine wave is not clipped. 
2. Note down this value of the input Vin. 
3. Note down the peak-peak amplitude of the corresponding output VO. 
4. Connect a DRB (with maximum resistance) in parallel with the load. 
5. When the magnitude of the output VO is reduced to half of its original value, stop varying 
the potentiometer further and remove the DRB from the circuit. 
6. Measure the value of resistance in DRB and this is measured value will be the output 
impedance of the circuit. 
RESULT: 
Parameters AV = (VO/Vi) Zi ZO 
Without Bootstrap 
With Bootstrap 
Dept. of ECE, KSSEM Page 62
AEC LAB MANUAL 
TRANSFORMER-LESS CLASS B PUSH-PULL POWER AMPLIFIER 
AIM: 
Testing of a transformer less class-B push pull power amplifier and determination of its 
conversion efficiency. 
COMPONENTS REQUIRED: 
Sl.No Components Range Quantity 
1 Transistors SL-100, SK-100 1 
2 Resistors 270Ω 2 
3 Variable power supply (0-30)V 1 
4 Function Generator - 1 
5 DSO - 1 
6 Decade Resistance box - 1 
7 Connecting Wires - 1set 
THEORY: 
Push-pull amplifier is basically a class B amplifier, in which a transistor conducts for a half 
cycle. For complete conduction, such an amplifier uses two transistors. The arrangement of 
transistors is called complementary circuit. During the positive half of the input signal, the NPN 
transistor conducts and during negative half of the input signal PNP transistor conducts. The 
transistor conducts only if the input voltage across the threshold voltage of 0.7V. This is because 
input itself biases the transistors. During this interval, no transistors conducts or output is zero. 
This causes a distortion called crossover distortion. If the peak load-voltage equals the supply 
voltage, maximum efficiency occurs and the value is 78.5%. The main disadvantage is it uses 
two power supply and distortion itself. 
Dept. of ECE, KSSEM Page 63
AEC LAB MANUAL 
CIRCUIT DIAGRAM: 
Fig. (1) 
PROCEDURE: 
1. Place the components on the spring board and connect them as shown in the fig.(1). 
2. Connect one channel of the CRO to input signal and connect second channel to the 
output. 
3. Keep frequency of the function generator around 1KHz and increase the amplitude 
around 10V and observe the input and output waveforms. Observe the crossover 
distortion. 
4. Gradually increase the input signal until the output signal gets distorted. When this 
happens slightly reduce the input signal amplitude such that output is maximum 
undistorted signal. Note down the Peak value of the output waveform and VCC. 
5. Calculate the efficiency using the equation % efficiency = 
. 
Dept. of ECE, KSSEM Page 64
AEC LAB MANUAL 
TABULAR COLUMN: 
RL in KΩ %Efficiency 
1KΩ 
. 
. 
. 
. 
. 
. 
. 
. 
. 
. 
10KΩ 
RESULT: 
The efficiency of the class B power amplifier for different load resistance is verified. 
Dept. of ECE, KSSEM Page 65
AEC LAB MANUAL 
BIBLIOGRAPHY 
1. “Electronic devices and circuit theory”, Robert L.Boylestad and 
Louis Nashelsky. 
2. “Integrated electronics”, Jacob Millman and Christos C Halkias. 
3. “Electronic devices and circuits”, David A. Bell. 
4. “Electronic devices and circuits”, G.K.Mittal. 
Dept. of ECE, KSSEM Page 66
AEC LAB MANUAL 
VIVA-VOCE QUESTIONS 
1. What are conductors, insulators, and semi-conductors? Give egs. 
2. Name different types of semiconductors. 
3. What are intrinsic semiconductors and extrinsic semiconductors? 
4. How do you get P-wpe and N-type semiconductors? 
5. What is doping? Name different levels of doping. 
6. Name different types of Dopants. . 
7. What do you understand by Donor and acceptor atoms? 
8. What is the other name for p-type and N-type semiconductors? 
9. What are majority carriers and minority carriers? 
10. What is the effect of temperature on semiconductors? 
11. What is drift current? . 
12. What is depletion region or space charge region? 
13. What is junction potential or potential barrier in PN junctioI).? 
14. What is a diode? Name different types of diodes and name its applications 
15. What is biasing? Name different types w.r.t. Diode biasing 
16. How does a diode behave in its forward and reverse biased conditions? 
17. What is static and dyriantic resistance of diode? 
18. Why the current in the fo~ard biased diode takes exponential path? 
19. What do you understand 1?y AvaJanche breakdown and zener breakdown? 
20. Why diode is called unidirectional device. 
21. What is PIV of a diode 
22. What is knee voltage or cut-in voltage? 
23. What do you mean by transition capacitance or space charge capacitor? 
24. What do you mean by diffusion capacitance or storage capacitance? 
25. What is a transistor? Why is it called so? . 
26. Name different types, of transistors? 
27. Name different configurations in which the transistor is operated 
28. Mention the applications of transistor. Explain how transistor is used as switch 
29. What is transistor biasing? Why is it necessary? 
30. What are the three different regions in which the transistor works? 
31. Why trmisistor is called current controlled device? 
32. What is FET? Why it is called so? 
33. What are the parameters ofFET? 
34. What are the characteristics of FET? 
35. Why FET is known as voltage controlled device? 
36. What are the differences between BJT and FET? 
37. Mention applications ofFET. What is pinch offvQltage, VGS(ofJ) and lDss 
38. What is an amplifier? What is the need for an amplifier circuit? 
39. How do you classify amplifiers? , 
40. What is faithful amplification? How do you achieve this? 
41. What is coupling? Name different type.s of coupling 
42. What is operating point or quiescent point? 
43. What do you mean by frequency response of an amplifier? 
44. What are gain, Bandwidth, lower cutoff frequency and upper cutoff frequency? 
45. What is the figure of merit of an amplifier circuit? 
Dept. of ECE, KSSEM Page 67
AEC LAB MANUAL 
46. What are the advantages of RC coupled amplifier? 
47. Why a 3db point is taken to calculate Bandwidth? 
48. What is semi-log graph sheet? Why it is used to plot frequency response? 
49. How do you test a diode, transistor, FET? 
50. How do you identify the tenninals of Diode, Transistor& FET? Mention the type 
number of the devices used in your lab. 
51. Describe the operation ofNPN transistor. Define reverse saturation current. 
52. Explain Doping w.r.t. Three regions of transistor 
53. Explain the terms hie/hib, hoelhob, hre/hrb, hre/hfb. 
54. Explain thermal run-.taway. How it can'be prevented. 
55. Define FET parameters and write the relation between them. 
56. What are Drain Characteristics and transfer characteristics? 
57. Explain the construction and working of FET 
58. What is feedback? Name different types. 
59. What is the effect of negative feedback on the characteristics of an amplifier? 
60. Why common collector amplifier is known as emitter follower circuit? 
61. What is the application of emitter follower ckt? 
62. What is cascading and cascoding? Why do you cascade the amplifier ckts.? 
63. How do you determine the value of capacitor? 
64. Write down the diode current equation. 
65. Write symbols of various passive and active components 
66. How do you determine th~value of resistor by colour code method? 
67. What is tolerance and power rating of resistor? 
68. Name different types of resistors. 
69. How do you c1assify resistors? 
70. Name different types of capacitors.. 
71. What are clipping circuits? Classify them. 
72. Mention the application of clipping circuits. 
73. What are clamping circuits? Classify them 
74. What is the other name of clamping circuits? 
75. Mention the applications of clamping circuits. 
76. 'What is Darlington emitter follower circuit? 
77. Can we increase the number of transistors in Darlington emitter follower circuit? 
Justify your answer. 
78. What is the different between Darlington emitter follower circuit & Voltage follower 
circuit using Op-Amp. Which is better. 
79. Name different types of Emitter follower circuits. 
80. What is an Oscillator? Classify them. 
81. What ar~ The Blocks, which fonns an Oscillator circuits? 
82. What are damped & Un-damped Oscillations? 
83. What are Barkhausen's criteria? 
84. What type of oscillator has got frequency stability? 
85. What is the disadvantage of Hartley & Colpiit's Oscillator? 
86. Why RC tank Circuit Oscillator is used for AF range? 
87. Why LC tank Circuit Oscillator is used for RF range? 
88. What type of feedback is used in Oscillator circuit? 
89. In a Transistor type No. SL 100 and in Diode BY 127, what does SL and BY stands 
Dept. of ECE, KSSEM Page 68
AEC LAB MANUAL 
for 
90. Classify Amplifiers based on: operating point selection. 
91. What is the efficiency of Class B push pull amplifier? 
92. What is the drawback of Class B Push pull Amplifier? How it is eliminated. 
93. What is the advantage of having complimentary symmetry push pull amplifier? 
94. What is Bootstrapping? What is the advantage of bootstrapping? 
95. State Thevenin's Theorem and Max.power transfer theorem. 
96. What is the figure of merit of resonance circuit? 
97. What is the application of resonant circuit? 
98. What is a rectifier? Classify. 
99. What is the efficiency of half wave and full wave rectifier? 
100. What is the advantage of Bridge rectifier of Centre tapped type FWR 
101. What is the disadvantage of Bridge rectifier? 
102. What is a filter? 
103. Name different types of filter ckts. 
104. Which type of filter is used in day to day application and why? 
105. What is ripple and ripple factor? . 
106. What is the theoretical value of ripple for Half Wave and .Full wave rectifier? 
107. What is need for rectifier ckts. 
108. Why a step down transformer is used at the input of Rectifier ckt. 
109. What is TUF? . 
110. What is regulation w.r.t rectifier? And how it is calculated? 
111. What is figure of merit of Rectifier ckt. 
Dept. of ECE, KSSEM Page 69
AEC LAB MANUAL 
QUESTION BANK 
ANALOG ELECTRONIC CIRCUITS LAB (10ESL37) 
1. A) Design a positive clamping circuit for a given reference voltage of Vref=+2v. 
B) Design a negative clamping circuit for a given reference voltage ofVref= -2v. 
2. Conduct a suitable experiment to shift the given reference voltage waveform by 4v 
a) Above the reference waveform b) Below the reference waveform 
3. Design and rig up suitable circuits to shift the given reference sinusoidal input voltage 
waveform as shown in the fig. 
Vo V0 
0 t 
-1.5 
-6.5 2.5 
-11.5 0 t 
-2.5 
4. Design and rig up suitable circuits for the following transfer function as shown in the fig. 
For a sinusoidal/triangular input.(any two to be specified) 
Dept. of ECE, KSSEM Page 70
AEC LAB MANUAL 
5. Design a suitable circuit to clip the reference voltage waveform at two different levels. 
Also obtain its transfer characteristics. 
6. Rig up a suitable circuit for 
A) Diode positive peak clipping. B) Diode negative peak clipping. 
7. Conduct an experiment to determine the gain v/s frequency response, input and output 
impedances for a RC coupled single stage BJT amplifier. 
8. Conduct an experiment to determine gain, input and output impedances for a Darlington 
emitter follower circuit with and without bootstrap. 
9. Conduct an experiment to obtain a relationship between the bandwidths for a voltage 
series feedback circuit with and without feedback. 
10. Design the LC oscillator circuits to generate frequency of oscillations at f=100 khz 
Using BJT. 
Dept. of ECE, KSSEM Page 71
AEC LAB MANUAL 
11. Design and rig up Hartley and colpitts oscillator circuits for a given frequency using 
BJT. 
12. Conduct an experiment to generate the given frequency of an oscillation. (type of the 
oscillator to be specified). 
13. Conduct a suitable experiment to introduce a phase shift of 1800 at an audio frequency 
Range. 
14. Conduct a suitable experiment to produce sinusoidal oscillations using RC phase shift 
network. 
15. Conduct a suitable experiment to determine the frequency of oscillations of a given crystal. 
16. Determine ripple factor, regulation and efficiency of Half wave Rectifier Circuit with and 
Without Capacitor filter. 
17. Determine ripple factor, regulation and efficiency of center tapped Full wave Rectifier Circuit with 
and Without Capacitor filter. 
Dept. of ECE, KSSEM Page 72
AEC LAB MANUAL 
18. Determine ripple factor, regulation and efficiency of Bridge Rectifier Circuit with and 
Without Capacitor filter. 
19. Conduct an experiment to verify Thevenin’s Theorem and Maximum Power Transfer theorem. 
20. Rig up suitable circuit to determine the Characteristics of Series and Parallel resonant circuits 
21. Rig up suitable circuit to determine the Characteristics of RLC circuits. 
Dept. of ECE, KSSEM Page 73
1N5221B - 1N5263B — Zener Diodes 
July 2013 
1N5221B - 1N5263B 
Zener Diodes 
Tolerance = 5% 
DO-35 Glass case 
COLOR BAND DENOTES CATHODE 
Absolute Maximum Ratings 
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble 
above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, 
extended exposure to stresses above the recommended operating conditions may affect device reliability. The 
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 
Symbol Parameter Value Units 
PD 
Power Dissipation 500 mW 
Derate above 50°C 4.0 mW°C 
TSTG Storage Temperature Range -65 to +200 °C 
TJ 
Operating Junction Temperature Range -65 to +200 °C 
Lead Temperature (1/16 inch from case for 10 s) +230 °C 
Note: 
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 
Non-recurrent square wave Pulse Width = 8.3 ms, TA = 50°C 
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 
1N5221B - 1N5263B Rev. 1.2.0 1
1N5221B - 1N5263B — Zener Diodes 
Electrical Characteristics 
Values are at TA = 25°C unless otherwise noted . 
Device 
Min. Typ. Max. (%/°C) 
1N5221B 
1N5222B 
1N5223B 
1N5224B 
1N5225B 
2.28 
2.375 
2.565 
2.66 
2.85 
1N5226B 
1N5227B 
1N5228B 
1N5229B 
1N5230B 
3.135 
3.42 
3.705 
4.085 
4.465 
1N5231B 
1N5232B 
1N5233B 
1N5234B 
1N5235B 
4.845 
5.32 
5.7 
5.89 
6.46 
1N5236B 
1N5237B 
1N5238B 
1N5239B 
1N5240B 
7.125 
7.79 
8.265 
8.645 
9.5 
1N5241B 
1N5242B 
1N5243B 
1N5244B 
1N5245B 
10.45 
11.4 
12.35 
13.3 
14.25 
1N5246B 
1N5247B 
1N5248B 
1N5249B 
1N5250B 
15.2 
16.15 
17.1 
18.05 
19 
1N5251B 
1N5252B 
1N5253B 
1N5254B 
1N5255B 
20.9 
22.8 
23.75 
25.65 
26.6 
1N5256B 
1N5257B 
1N5258B 
1N5259B 
1N5260B 
28.5 
31.35 
34.2 
37.05 
40.85 
1N5261B 
1N5262B 
1N5263B 
44.65 
48.45 
53.2 
VF Forward Voltage = 1.2V Max. @ IF = 200mA 
Note: 
2. Zener Voltage (VZ) 
VZ (V) @ IZ (2) 
ZZ (Ω) @ IZ (mA) ZZK (Ω) @ IZK(mA) IR (μA) @ VR (V) 
TC 
2.4 
2.5 
2.7 
2.8 
3 
2.52 
2.625 
2.835 
2.94 
3.15 
30 
30 
30 
30 
29 
20 
20 
20 
20 
20 
1,200 
1,250 
1,300 
1,400 
1,600 
0.25 
0.25 
0.25 
0.25 
0.25 
100 
100 
75 
75 
50 
1.0 
1.0 
1.0 
1.0 
1.0 
-0.085 
-0.085 
-0.080 
-0.080 
-0.075 
3.3 
3.6 
3.9 
4.3 
4.7 
3.465 
3.78 
4.095 
4.515 
4.935 
28 
24 
23 
22 
19 
20 
20 
20 
20 
20 
1,600 
1,700 
1,900 
2,000 
1,900 
0.25 
0.25 
0.25 
0.25 
0.25 
25 
15 
10 
5.0 
2.0 
1.0 
1.0 
1.0 
1.0 
1.0 
-0.07 
-0.065 
-0.06 
+/-0.055 
+/-0.03 
5.1 
5.6 
6 
6.2 
6.8 
5.355 
5.88 
6.3 
6.51 
7.14 
17 
11 
7.0 
7.0 
5.0 
20 
20 
20 
20 
20 
1,600 
1,600 
1,600 
1,000 
750 
0.25 
0.25 
0.25 
0.25 
0.25 
5.0 
5.0 
5.0 
5.0 
3.0 
2.0 
3.0 
3.5 
4.0 
5.0 
+/-0.03 
0.038 
0.038 
0.045 
0.05 
7.5 
8.2 
8.7 
9.1 
10 
7.875 
8.61 
9.135 
9.555 
10.5 
6.0 
8.0 
8.0 
10 
17 
20 
20 
20 
20 
20 
500 
500 
600 
600 
600 
0.25 
0.25 
0.25 
0.25 
0.25 
3.0 
3.0 
3.0 
3.0 
3.0 
6.0 
6.5 
6.5 
7.0 
8.0 
0.058 
0.062 
0.065 
0.068 
0.075 
11 
12 
13 
14 
15 
11.55 
12.6 
13.65 
14.7 
15.75 
22 
30 
13 
15 
16 
20 
20 
9.5 
9.0 
8.5 
600 
600 
600 
600 
600 
0.25 
0.25 
0.25 
0.25 
0.25 
2.0 
1.0 
0.5 
0.1 
0.1 
8.4 
9.1 
9.9 
10 
11 
0.076 
0.077 
0.079 
0.080 
0.082 
16 
17 
18 
19 
20 
16.8 
17.85 
18.9 
19.95 
21 
17 
19 
21 
23 
25 
7.8 
7.4 
7.0 
6.6 
6.2 
600 
600 
600 
600 
600 
0.25 
0.25 
0.25 
0.25 
0.25 
0.1 
0.1 
0.1 
0.1 
0.1 
12 
13 
14 
14 
15 
0.083 
0.084 
0.085 
0.085 
0.086 
22 
24 
25 
27 
28 
23.1 
25.2 
26.25 
28.35 
29.4 
29 
33 
35 
41 
44 
5.6 
5.2 
5.0 
4.6 
4.5 
600 
600 
600 
600 
600 
0.25 
0.25 
0.25 
0.25 
0.25 
0.1 
0.1 
0.1 
0.1 
0.1 
17 
18 
19 
21 
21 
0.087 
0.088 
0.088 
0.089 
0.090 
30 
33 
36 
39 
43 
31.5 
34.65 
37.8 
40.95 
45.15 
49 
58 
70 
80 
93 
4.2 
3.8 
3.4 
3.2 
3.0 
600 
700 
700 
800 
900 
0.25 
0.25 
0.25 
0.25 
0.25 
0.1 
0.1 
0.1 
0.1 
0.1 
23 
25 
27 
30 
33 
0.09 
0.092 
0.093 
0.094 
0.095 
47 
51 
56 
49.35 
53.55 
58.8 
105 
125 
150 
2.7 
2.5 
2.2 
1000 
1100 
1300 
0.25 
0.25 
0.25 
0.1 
0.1 
0.1 
36 
39 
43 
0.095 
0.096 
0.096 
The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) 
at 30°C ± 1°C and 3/8” lead length. 
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 
1N5221B - 1N5263B Rev. 1.2.0 2
1N5221B - 1N5263B — Zener Diodes 
Top Mark Information 
Device Line 1 Line 2 Line 3 
1N5221B 
LOGO 
22 
1B 
1N5222B 
LOGO 
22 
2B 
1N5223B 
LOGO 
22 
3B 
1N5224B 
LOGO 
22 
4B 
1N5225B 
LOGO 
22 
5B 
1N5226B 
1N5227B 
1N5228B 
1N5229B 
1N5230B 
LOGO 
LOGO 
LOGO 
LOGO 
LOGO 
22 
22 
22 
22 
23 
6B 
7B 
8B 
9B 
0B 
1N5231B 
1N5232B 
1N5233B 
1N5234B 
1N5235B 
LOGO 
LOGO 
LOGO 
LOGO 
LOGO 
23 
23 
23 
23 
23 
1B 
2B 
3B 
4B 
5B 
1N5236B 
1N5237B 
1N5238B 
1N5239B 
1N5240B 
LOGO 
LOGO 
LOGO 
LOGO 
LOGO 
23 
23 
23 
23 
24 
6B 
7B 
8B 
9B 
0B 
1N5241B 
1N5242B 
1N5243B 
1N5244B 
1N5245B 
LOGO 
LOGO 
LOGO 
LOGO 
LOGO 
24 
24 
24 
24 
24 
1B 
2B 
3B 
4B 
5B 
1N5246B 
1N5247B 
1N5248B 
1N5249B 
1N5250B 
LOGO 
LOGO 
LOGO 
LOGO 
LOGO 
24 
24 
24 
24 
25 
6B 
7B 
8B 
9B 
0B 
1N5251B 
1N5252B 
1N5253B 
1N5254B 
1N5255B 
LOGO 
LOGO 
LOGO 
LOGO 
LOGO 
25 
25 
25 
25 
25 
1B 
2B 
3B 
4B 
5B 
1N5256B 
1N5257B 
1N5258B 
1N5259B 
1N5260B 
LOGO 
LOGO 
LOGO 
LOGO 
LOGO 
25 
25 
25 
25 
26 
6B 
7B 
8B 
9B 
0B 
1N5261B 
1N5262B 
1N5263B 
LOGO 
LOGO 
LOGO 
26 
26 
26 
1B 
2B 
3B 
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 
1N5221B - 1N5263B Rev. 1.2.0 3
1N5221B - 1N5263B — Zener Diodes 
Top Mark Information (Continued) 
General Requirements: 
1.0 Cathode Band 
2.0 First Line: F - Fairchild Logo 
3.0 Second Line: Device name - For 1Nxx series: 4th to 5th characters of the device name. 
For BZxx series: 5th to 6th characters of the device name. 
4.0 Third Line: Device name - For 1Nxx series: 6th to 7th characters of the device name. 
For BZXyy series: Voltage rating 
5.0 Devices shall be marked as required in the device specification (PID or FSC Test Spec). 
6.0 Maximum no. of marking lines: 3 
7.0 Maximum no. of digits per line: 2 
8.0 FSC logo must be 20 % taller than the alphanumeric marking and should occupy the 2 characters of the specified 
line. 
9.0 Marking Font: Arial (Except FSC Logo) 
10.0 First character of each marking line must be aligned vertically. 
11.0 All device markings must be based on Fairchild device specification. 
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 
1N5221B - 1N5263B Rev. 1.2.0 4
1N5221B - 1N5263B — Zener Diodes 
Physical Dimensions 
DO-35 
25.40 MIN 
(2X) 
0.533 
0.460 
4.56 
3.05 
1.91 
1.53 
NOTES: UNLESS OTHERWISE SPECIFIED 
A) PACKAGE STANDARD REFERENCE: 
JEDEC DO-204, VARIATION AH. 
B) HERMETICALLY SEALED GLASS PACKAGE. 
C) PACKAGE WEIGHT IS 0.137 GRAM. 
D) ALL DIMENSIONS ARE IN MILLIMETERS. 
E) DRAWING FILE NAME: DO35AREV02 
Figure 1. AXIAL LEADED; GLASS; JEDEC DO204; VARIATION AH (ACTIVE) 
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner 
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or 
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the 
warranty therein, which covers Fairchild products. 
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: 
http://www.fairchildsemi.com/dwg/DO/DO35A.pdf. 
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: 
http://www.fairchildsemi.com/packing_dwg/PKG-DO35A_TC.pdf. 
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 
1N5221B - 1N5263B Rev. 1.2.0 5
TRADEMARKS 
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not 
intended to be an exhaustive list of all such trademarks. 
2Cool¥ 
AccuPower¥ 
AX-CAP®* 
BitSiC¥ 
Build it Now¥ 
CorePLUS¥ 
CorePOWER¥ 
CROSSVOLT¥ 
CTL¥ 
Current Transfer Logic¥ 
DEUXPEED® 
Dual Cool™ 
EcoSPARK® 
EfficientMax¥ 
ESBC¥ 
® 
Fairchild® 
Fairchild Semiconductor® 
FACT Quiet Series¥ 
FACT® 
FAST® 
FastvCore¥ 
FETBench¥ 
FPS¥ 
F-PFS¥ 
FRFET® 
Global Power ResourceSM 
GreenBridge¥ 
Green FPS¥ 
Green FPS¥ e-Series¥ 
Gmax¥ 
GTO¥ 
IntelliMAX¥ 
ISOPLANAR¥ 
Making Small Speakers Sound Louder 
and Better™ 
MegaBuck¥ 
MICROCOUPLER¥ 
MicroFET¥ 
MicroPak¥ 
MicroPak2¥ 
MillerDrive¥ 
MotionMax¥ 
mWSaver¥ 
OptoHiT¥ 
OPTOLOGIC® 
OPTOPLANAR® 
® 
PowerTrench® 
PowerXS™ 
Programmable Active Droop¥ 
QFET® 
QS¥ 
Quiet Series¥ 
RapidConfigure¥ 
¥ 
Saving our world, 1mW/W/kW at a time™ 
SignalWise¥ 
SmartMax¥ 
SMART START¥ 
Solutions for Your Success¥ 
SPM® 
STEALTH¥ 
SuperFET® 
SuperSOT¥-3 
SuperSOT¥-6 
SuperSOT¥-8 
SupreMOS® 
SyncFET¥ 
Sync-Lock™ 
®* 
TinyBoost¥ 
TinyBuck¥ 
TinyCalc¥ 
TinyLogic® 
TINYOPTO¥ 
TinyPower¥ 
TinyPWM¥ 
TinyWire¥ 
TranSiC¥ 
TriFault Detect¥ 
TRUECURRENT®* 
PSerDes¥ 
UHC® 
Ultra FRFET¥ 
UniFET¥ 
VCX¥ 
VisualMax¥ 
VoltagePlus¥ 
XS™ 
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 
DISCLAIMER 
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE 
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT 
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE 
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, 
WHICH COVERS THESE PRODUCTS. 
LIFE SUPPORT POLICY 
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE 
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 
As used herein: 
1. Life support devices or systems are devices or systems which, (a) are 
intended for surgical implant into the body or (b) support or sustain 
life, and (c) whose failure to perform when properly used in 
accordance with instructions for use provided in the labeling, can be 
reasonably expected to result in a significant injury of the user. 
2. A critical component in any component of a life support, device, or 
system whose failure to perform can be reasonably expected to 
cause the failure of the life support device or system, or to affect its 
safety or effectiveness. 
ANTI-COUNTERFEITING POLICY 
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, 
under Sales Support. 
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their 
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed 
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the 
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild 
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors 
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical 
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. 
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global 
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 
PRODUCT STATUS DEFINITIONS 
Definition of Terms 
Datasheet Identification Product Status Definition 
Advance Information Formative / In Design 
Datasheet contains the design specifications for product development. Specifications may change 
in any manner without notice. 
Preliminary First Production 
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild 
Semiconductor reserves the right to make changes at any time without notice to improve design. 
No Identification Needed Full Production 
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make 
changes at any time without notice to improve the design. 
Obsolete Not In Production 
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. 
The datasheet is for reference information only. 
Rev. I64 
© Fairchild Semiconductor Corporation www.fairchildsemi.com
AEC LAB MANUAL 
Dept. of ECE, KSSEM Page 74
AEC LAB MANUAL 
Dept. of ECE, KSSEM Page 75
AEC LAB MANUAL 
Dept. of ECE, KSSEM Page 76
AEC LAB MANUAL 
Dept. of ECE, KSSEM Page 77
AEC LAB MANUAL 
VALUE(pF) CODE VALUE(pF) VALUE(uF) CODE 
1.5pF 1,000pF .001uF 102 
3.3pF 1,500pF .0015uF 152 
10pF 2,000pF .002uF 202 
15pF 2,200pF .0022uF 222 
20pF 4,700pF .0047uF 472 
30pF 5,000pF .005uF 502 
33pF 5,600pF .0056uF 562 
47pF 6,800pF .0068uF 682 
56pF .01uF 103 
68pF .015 
75pF .02 203 
82pF .022 223 
91pF .033 333 
100pF 101 .047 473 
120pF 121 .05 503 
130pF 131 .056 563 
150pF 151 .068 683 
180pF 181 .1 104 
220pF 221 .2 204 
330pF 331 .22 224 
470pF 471 .33 334 
560pF 561 .47 474 
680pF 681 .56 564 
750pF 751 1 105 
820pF 821 2 205 
Dept. of ECE, KSSEM Page 78
AEC LAB MANUAL 
Capacitor Types and colors: 
1pf - 1800pf Yellow Ceramic Disk or Blue or Yellow Monolithics 
.001; .01; .022; .047; 0.1; 0.47; 1uF (C96 on 
K2) Red Monolithics 
Temperature stable caps are marked "NP0", "C0G" or have a black top. 
Capacitor Marking Table (Ceramic and Monolithic Cap's) 
IMPORTANT: Capacitors with values below 100 pf may be marked two ways: Either with just 
two digits (22 pF = "22") or three digits (22 pF = "220",). In the latter case the third digit 
signifies the number of zeros following the first two digits. "220" = 22 pF, "221" = 220 
pF, "222" = 2200 pF. 
VALUE MARKING VALUE MARKING VALUE MARKING 
1pf; 3pf; 
5pf 
1; 3; 5 
2.7, 3 or 3.3 pF can be interchanged with each 
other. 
4.7 or 5 pF can be interchanged with each 
other. 
10 pf 10 or 100 0.001 uF 102 0.10 uF 104 
12 pf 12 or 120 0.0012uF 
(1200pf) 
122 0.12 uF 124 
15 pf 15 or 150 0.0015uF 152 0.15 uf 154 
18 pf 18 or 180 0.0018 
uF 
(1800pf) 
182 0.18 uF 184 
22 pf 22 or 220 0.0022uF 222 0.22 uF 224 
27 pf 27 or 270 0.0027uF 272 0.27 uF 274 
33 pf 33 or 330 0.0033 
uF 
332 0.33 uF 334 
39 pf 39 or 390 0.0039uF 392 0.39 uF 394 
47 pf 47 or 470 0.0047uF 472 0.47 uF 474 
58 pf 58 or 580 0.0056uF 562 0.56 uF 564 
68 pf 68 or 680 0.0068uF 682 0.68 uF 684 
82 pf 82 or 820 0.0082uF 822 0.82 uF 824 
100 pf 101 0.01 uF 103 1uF 105 or 1uf 
120 pf 121 0.012 uF 123 
150 pf 151 0.015 uF 153 
180 pf 181 0.018 uF 183 
220 pf 221 0.022 uF 223 
270 pf 271 0.027 uF 273 
330 pf 331 0.033 uF 333 
390 pf 391 0.039 uF 393 
470 pf 471 0.047 uF 473 
560 pf 561 0.056 uF 563 
680 pf 681 0.068 uF 683 
820 pf 821 
0.082 uF 823 
Dept. of ECE, KSSEM Page 79
AEC LAB MANUAL 
Dept. of ECE, KSSEM Page 80

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Aec manual for III SEM ECE Students VTU

  • 1. Different Resistor Types: Carbon film resistors: The size of the resistor decides its power rating (i.e., the maximum power it can dissipate without burning). Power rating from the top of the graph: 1/8 W 1/4 W 1/2 W Metal film resistors: Used when a higher tolerance (more accurate value) is needed. Power rating from the top of the graph: 1/8 W (tolerance ±1%) 1/4 W (tolerance ±1%) 1 W (tolerance ±5%) 2 W (tolerance ±5%) Reading resistor values from the colored bands: Single-In-Line (SIL) Resistor network:
  • 2. Variable Resistors: Wirewound resistors: Ceramic (or cement) resistor: Thermistor (thermally sensitive resistor ): SMD resistors (Surface-Mount Device):
  • 3. Different Capacitor Types: Ceramic Capacitors: Limited to quite small values, but have high voltage ratings. They range from 1pF to 0.47μF and are not polarized. Reading Ceramic Capacitor values: For the number : Mult iply by: LETTER TOLERANCE 1 0 pF or LESS TOLERANCE OVER 1 0 pF 0 1 B + / - 0.1pF 1 10 C + / -0.25pF 2 100 D + / - 0.5pF 3 1000 F + / - 1.0pF + / - 1% 4 10,000 G + / - 2.0pF + / - 2% 5 100,000 H + / - 3% J + / - 5% 8 0.01 K + / - 10% 9 0.1 M + / - 20% Example: 102 means 10 (and two zeroes) 00 or 1,000 pF or .001uF. Electrolytic Capacitors (Electrochemical type capacitors): Used for all values above 0.1μF. Electrolytics have lower accuracy and temperature stability than most other types and are almost always polarised. It's usually best to only use an electrolytic when no other type can be used, or for all values over 100μF. From the left to right: 1μF (50V) 47μF (16V) 100μF (25V) 220μF (25V) 1000μF (50V)
  • 4. Tantalum Capacitors: Tantalum capacitors pack a large capacity into a relatively small and tough package compared to electrolytics, but have much smaller voltage ratings. They are often polarized and range from 0.1μF to 100μF. From the left to right: 0.33 μF (35V) 0.47 μF (35V) 10 μF (35V) Polyester Film Capacitors (Green Caps): Ranging from 0.01μF to 5μF. They are similar to ceramics with some larger values and a slightly larger construction. They are not polarized. Metallized Polyester Film Capacitors: SMD Capacitors: Variable Capacitors:
  • 5. Different Inductor Types: Inductors: Reading Inductor values from color codes: High Frequency Coils (ferrite core): The Toroidal Coil:
  • 6. Other interesting components: Diodes: LED (Light Emitting Diodes): Transistors: ICs (Integrated Circuits): Pin Numbers: Multimeters (Analog and Digital):
  • 7. K. S School of Engineering and Management Department of Electronics and Communication Engineering A LAB MANUAL ON ANALOG ELECTRONICS Subject Code: 10ESL37 (As per VTU Syllabus) PREPARED BY Staff members : Gopalakrishna Murthy C R Sanjay Naik Vinay R
  • 8. AEC LAB MANUAL CONTENTS EXPT. NO. NAME OF THE EXPERIMENT PAGE NO. 01 Testing of Half wave, full wave and bridge rectifier circuits with and without Capacitor filter. 01 02 Testing of Clamping circuits for Positive and Negative clamping 10 03 Testing of Diode Clipping circuits (Single/Double ended) for peak clipping, peak detection. 16 04 RC coupled amplifier using BJT and FET 23 05 Testing for the performance of BJT- Hartley oscillator / Colpitt’s oscillator for RF range fo > 100KHz. 31 06 Testing for the performance of BJT-Crystal oscillator for fo > 100KHz. 38 07 Wiring and testing for the performance of BJT-RC phase shift oscillator for fo < 10Khz. 41 08 Wiring of two stage BJT Voltage series feedback amplifier 45 09 Verification of Thevenin’s theorem and maximum power transfer theorem for DC circuits. 51 10 Characteristics of Series and parallel resonance circuits. 55 11 Wiring of BJT Darlington emitter follower with and without bootstrapping 59 12 Testing of a transformer less Class-B push pull power amplifier and determination of its conversion efficiency. 63 13 Bibliography 65 14 Vivo-voce questions 66 Dept. of ECE, KSSEM Page 1
  • 9. AEC LAB MANUAL Ex.No:01 HALF WAVE, FULL WAVE AND BRIDGE RECTIFIER a) HALF WAVE RECTIFIER AIM: To study Half Wave Rectifier and to calculate ripple factor, efficiency and regulation with filter and without filter. COMPONENTS REQUIRED: Sl. No. Components Details Range/Specification Qty 1. Diodes BY127/IN4007 1 No. 2. Capacitor 0.1μf, 100μf Each 1 No. 3. Power Resistance Board (DRB) - 1 No. 4. Step down Transformer 12 -0-12 1 No. 5. CRO, Multimeter, milli ammeter, Connecting Board, wires and etc. THEORY: Rectifier circuits are used to convert AC in DC. Half wave rectifier circuit diode (rectifying element) conducts only during positive half cycle of input ac supply. The negative half cycles of ac supply are eliminated from the output. The dc output waveform is expected to be a straight line but the half wave rectifier gives output in the form of positive sinusoidal pulses. Thus the output is called pulsating dc. In Full wave rectifier both positive and negative half cycles of AC inputs are converted in to pulsating DC output. Capacitor is used as a filtering element to remove ac components from output and to convert pulsating DC in to Constant DC . CIRCUIT DIAGRAM: a) HALF WAVE RECTIFIER WITHOUT FILTER CAPACITOR C2 0.1μF A K BY127 RL Step down Transformer AC (230V/50HZ) 12V 0 12V Ammeter(0-250mA) A + - VODC VOAC Dept. of ECE, KSSEM Page 2
  • 10. AEC LAB MANUAL Note: connect Voltmeter/Multimeter across load Resistor to measure VODC and CRO terminals to observe the output wave forms. b) HALF WAVE RECTIFIER WITH FILTER CAPACITOR Step down Transformer AC (230V/50HZ) DESIGN: rms IN 12 V V A K Ammeter(0-250mA) A + - 0.1μF BY127 12V 0 12V V V V INpeak INrms  2  16.97 V   V / 5.4V O DC m    Given V   5V O DC  C1 100μF I   100mA O DC  R  V   /I    50 L O DC O DC Ripple = r = Vo rms / VO DC = 1.21 Design for the filter capacitor Ripple = 1/ (23 f C RL) Given r = 0.25 C = 1/(23 f r RL) RL = 50 f = 50Hz =95.43F  100F RL + - VODC VOAC Efficiency  = output Power (PDC) /Input Power (PAC)  (I2 DC * RL) / [(Irms)2 * (RL + RF + Rs)]  ≈ 2 (Vodc)2/(Vi rms)2 ≈ 40.6% C2 Dept. of ECE, KSSEM Page 3
  • 11. AEC LAB MANUAL Where Irms = Im/2 & Im = Vm/( RL + RF + Rs)  V V Regulation % Regulation = 100 NL FL V FL Where VNL = Vo(dc) & VFL = Vo(dc) - Idc (Rf + Rs) or VFL = Idc * RL Rf = Diode forward Resistance & Rs = Transformer Secondary Resistance. PROCEDURE: 1. Connections are made as shown in the circuit diagram 2. Set say 100Ω in DRB and Switch on the AC power supply 3. Observe the wave form on CRO across the load resistor 4. Note down RL, IDC, VODC, VINrms, and VOrms in the tabular column for different load resistances. Don’t set zero resistance in DRB at any time. 5. Calculate the ripple and efficiency and Regulation for each load resistance. 6. With C filter calculate regulation and Compare the ripple factor rtheoretical with rpractical for the design values of RL and Capacitor. TABULAR COLUMN: Sl. No. RL IDC VO (DC) VIN (AC) VO (AC) Ripple Efficiency Regulation Result: (Without filter) Ripple = rtheoretical = 1.21 rpractical =___ (With Filter) rtheoretical = 1/ (23 f C RL) = 0.25 for C= 100F, r practical =___ Ripple factor = rpractical = Vorms/ Vodc Efficiency = theoritical = 40.6% practical ≈ [2 (Vodc)2]/(Vi rms)2  V V Regulation = % Regulation = 100 NL FL V FL Where VNL = no load voltage = voltage across output by removing load resistance. VFL = Full load voltage = Voltage across output with load resistance. Dept. of ECE, KSSEM Page 4
  • 12. AEC LAB MANUAL WAVEFORMS: 20 0 t VIN - 20 Vo (Without Filter) VO 0 t Vo (with filter) 0 t FULL WAVE RECTIFIER VC AIM: To study the full wave rectifier and to calculate ripple factor and efficiency and Regulation with filter and without filter. COMPONENTS REQUIRED: Sl. No. Components Details Specification Qty 1. Diodes BY127/IN4007 2 Nos. 2. Capacitor 0.1μf, 470μf Each 1 No. 3. Power Resistance Board (DRB) 1 No. 4. Step down Transformer 12 V 1 No. 5. CRO, Multimeter, Milli ammeter, Connecting Board and etc. THEORY: The center tapped full wave rectifier circuit is similar to a half wave rectifier circuit, using two diodes and a center tapped transformer. Both the input half cycles are converted into unidirectional pulsating DC. Dept. of ECE, KSSEM Page 5
  • 13. AEC LAB MANUAL CIRCUIT DIAGRAM: FULL WAVE RECTIFIER WITHOUT FILTER CAPACITOR C2 0.1UF A K BY127 RL 12V 0 12V Transformer Ammeter (0-250mA) A + - VO(DC) A K BY127 FULL WAVE RECTIFIER WITH FILTER CAPACITOR Step down AC (230V/50HZ) AC Step down Transformer (230V/50HZ) DESIGN: 12V 0 12V Vin rms = 12V V V V INpeak INrms  2  16.97 A K A K VO DC = 2Vm/ = 10.8V Given VO DC = 10V Ammeter (0-250mA) A + - BY127 0.1UF C1 470UF BY127 IO DC = 100mA RL = VO DC / IO DC = 100 Ripple = r = Vo rms / VO DC = 0.48 Design for the filter capacitor Ripple = 1/ (43 f C RL) Given r =0 .06 C = 1/(43 f r RL) VO (AC) C2 RL + - VO(DC) VO(AC) Dept. of ECE, KSSEM Page 6
  • 14. AEC LAB MANUAL RL = 100 f = 50Hz C = 470UF Efficiency  = PDC /PAC  (I2 DC * RL) / [(Irms)2 * (RL + RF +Rs)] Where Irms = IM/√2 and IM = VM /(RL + RF +Rs) Efficiency =  ≈ (Vodc)2/(Vi rms)2  V V Regulation % Regulation = 100 NL FL V FL Note: repeat the same procedure of HWR for calculating Regulation . PROCEDURE: 1. Connections are made as shown in the circuit diagram 2. Switch on the AC power supply 3. Observe the wave form on CRO across the load resistor and measure the o/p amplitude and frequency. 4. Note down RL, IDC, VODC , Vinac, Voac in the tabular column for different load resistances. 5. Calculate the ripple and efficiency and regulation for each load resistance. 6. Repeat the above procedure with filter capacitor. TABULAR COLUMN: Sl. No. RL IDC VO (DC) VIN (AC) VO (AC) Ripple Efficiency Regulation (Without filter) Ripple = rtheoretical = 0.48 rpractical =___ (With Filter) rtheoretical = 1/ (43 f C RL) = 0.06 for C= 470F, r practical =___ Ripple factor = rpractical = Vorms/ Vodc Efficiency = theoritical = 81.2% practical ≈ (Vodc)2/(Vi rms)2  V V Regulation = % Regulation = 100 NL FL V FL Where VNL = no load voltage = voltage across output by removing load resistance. VFL = Full load voltage = Voltage across output with load resistance. Dept. of ECE, KSSEM Page 7
  • 15. AEC LAB MANUAL WAVEFORMS: 0 t - Vo (Without Filter) 0 t Vo (with filter) 0 t VIN VO VC Dept. of ECE, KSSEM Page 8
  • 16. AEC LAB MANUAL BRIDGE RECTIFIER AIM: To study the bridge rectifier and to calculate ripple factor and efficiency and regulation with filter and without filter. COMPONENTS REQUIRED: Sl. No. Components Details Specification Qty 1. Diodes BY127/IN4007 4 Nos. 2. Capacitor 0.1μf, 470μf Each 1 No. 3. Power Resistance Board (DRB) 1 No. 4. Step down Transformer 12 V 1 No. 5. CRO, Multimeter, Milliammeter, Connecting Board THEORY: The bridge rectifier circuit is essentially a full wave rectifier circuit, using four diodes, forming the four arms of an electrical bridge. To one diagonal of the bridge, the ac voltage is applied through a transformer and the rectified dc voltage is taken from the other diagonal of the bridge. The main advantage of this circuit is that it does not require a center tap on the secondary winding of the transformer; ac voltage can be directly applied to the bridge. The bridge rectifier circuit is mainly used as a power rectifier circuit for converting ac power to dc power, and a rectifying system in rectifier type ac meters, such as ac voltmeter in which the ac voltage under measurement is first converted into dc and measured with conventional meter. CIRCUIT DIAGRAM: BRIDGE RECTIFIER WITHOUT FILTER CAPACITOR RL BRIDGE 1 - + 4 3 2 C2 0.1UF Step down Transformer AC (230V/50HZ) 12V 0 12V Vo Ammeter(0-250mA) A + - Dept. of ECE, KSSEM Page 9
  • 17. AEC LAB MANUAL BRIDGE RECTIFIER WITH FILTER CAPACITOR Step down Transformer AC (230V/50HZ) DESIGN: 2 12V 0 12V Vin rms = 12V V V V INpeak INrms  2  16.97 BRIDGE 1 - + 4 3 Ammeter(0-250mA) VO DC = 2Vm/ = 10.8V Given VO DC = 10V and IO DC = 100mA RL = VO DC / IO DC = 100 Ripple = r = Vo rms / VO DC = 0.48 Design for the filter capacitor Ripple = 1/(43 f C RL) Given r = .06 C = 1/(43 f r RL) RL = 100 and f = 50Hz C = 470UF Efficiency  = PDC /PAC = (I2 C1 470UF + A - + - DC * RL) / [(Irms)2 * (RL + RF)] OR  = 0.812/(1+2Rf/ RL) Where Irms = Im/2, & Im = Vm/(2Rf+RL)  V V Regulation % Regulation = 100 NL FL V FL RL C2 0.1UF Vo Dept. of ECE, KSSEM Page 10
  • 18. AEC LAB MANUAL PROCEDURE: 1. Connections are made as shown in the circuit diagram 2. Switch on the AC power supply 3. Observe the wave form on CRO across the load resistor and measure the o/p amplitude and frequency. 4. Note down RL, IDC, VODC , Vinac, Voac in the tabular column for different load resistances. 5. Calculate the ripple factor, efficiency and regulation for each load resistance. 6. Repeat the above procedure with filter capacitor. TABULAR COLUMN: Sl. No. RL IDC VO (DC) VIN (AC) VO (AC) Ripple Efficiency Regulation Calculations are same as FWR WAVEFORMS: Vin 20 t 0 - 20 Vo Vo (Without Filter) 0 t Vo (with filter) VC t Observation and Result: Dept. of ECE, KSSEM Page 11
  • 19. AEC LAB MANUAL DIODE CLAMPING CIRCUITS AIM: Testing of clamping circuits: positive /negative clamping. COMPONENTS REQUIRED: Sl.No Component Range Quantity 1 Resistor 100K 1 2 Diode 1N4001 2 3 Capacitor 1μF 1 4 DC variable Power supply (0-30) V 1 5 DSO - 1 6 Function Generator - 1 7 Connecting Wires - 1 set Theory: Clamper is a circuit that clamps a signal to a different DC level without changing the shape of the applied signal. Clamping circuit introduces a DC level into an ac signal. The different types of clampers are positive, negative and biased clampers. A clamping network must have a capacitor, a diode and a load resistor. The magnitude R and C must be chosen such that time constant RC is large enough to ensure that the voltage across the capacitor does not discharge significantly during the interval when the diode is non conducting. By connecting suitable Dc voltage in series with the diode, clamping level can be varied. The clamper with a positive DC shift is called positive clamper (Negative peak clamper) and a clamper with a negative DC shift is called negative clamper (Positive peak clamper). Positive Peak Clamper: This pushes down the DC the positive peak of the input signal to level above or below the reference level depending upon the DC offset voltage. Negative Peak Clamper: This pushes down the DC the negative peak of the input signal to level above or below the reference level depending upon the DC offset voltage. Design: Assume C, and for the clamping to occur select R such that RC T, where T is the period of the input signal. RC T ; Assume T = 2ms, let RC = 50T = 100ms Let R= 100K C = 1μF Dept. of ECE, KSSEM Page 12
  • 20. AEC LAB MANUAL Positive peak clamper (Positive Reference) Design: Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 vi vo 0 90 180 270 360 450 a. During the positive half of the input signal diode is forward biased D = ON Applying KVL to the loop Vin – VC – VK – VR = 0 VC = Vin– VK – VR VC = 5V – 0.6V – 2V VC = 2.4V b. During the negative half of the input signal diode is reverse biased D = OFF Applying KVL to the loop Vin – VC – VO = 0 VO = Vin – VC When Vin = 0V VO = -2.4V Vin = 5V VO = 2.4V Vin = -5V VO = -7.6V The output varies between +2.4V to -7.6V Dept. of ECE, KSSEM Page 13
  • 21. AEC LAB MANUAL Positive peak clamper (Negative Reference) Design: Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 vi vo 0 90 180 270 360 450 a. During the positive half of the input signal diode is forward biased D = ON Applying KVL to the loop Vin – VC – VK – VR = 0 VC = Vin– VK + VR VC = 5V – 0.6V + 2V VC = 6.4V b. During the negative half of the input signal diode is reverse biased D = OFF Applying KVL to the loop Vin – VC – VO = 0 VO = Vin – VC When Vin = 0V VO = -6.4V Vin = 5V VO = -1.4V Vin = -5V VO = -11.4V The output varies between -1.4V to -11.4V Dept. of ECE, KSSEM Page 14
  • 22. AEC LAB MANUAL Negative Peak Clamper (Negative Reference) Design: Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 vi vo 0 90 180 270 360 450 a. During the negative half of the input signal diode is forward biased D = ON Applying KVL to the loop -Vin + VC + VK + VR = 0 VC = - (-Vin – VK – VR) VC = - (-5V + 0.6V + 2V) VC = 2.4V b. During the positive half of the input signal diode is reverse biased D = OFF Applying KVL to the loop Vin + VC – VO = 0 VO = Vin + VC When Vin = 0V VO = 2.4V Vin = 5V VO = 7.4V Vin = -5V VO = -2.4V The output varies between -2.4V to 7.6V Dept. of ECE, KSSEM Page 15
  • 23. AEC LAB MANUAL Negative Peak Clamper (Positive Reference) Design: Assume Vin = 10VP-P, Vref = 2V, VK = 0.6V 12 11 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 vi vo 0 90 180 270 360 450 a. During the negative half of the input signal diode is forward biased D = ON Applying KVL to the loop -Vin + VC + VK – VR = 0 VC = - (Vin – VK – VR) VC = - (-5V + 0.6V – 2V) VC = 6.4V b. During the positive half of the input signal diode is reverse biased D = OFF Applying KVL to the loop Vin + VC – VO = 0 VO = Vin + VC When Vin = 0V VO = 6.4V Vin = 5V VO = 11.4V Vin = -5V VO = 1.4V The output varies between 1.4V to 11.4V Dept. of ECE, KSSEM Page 16
  • 24. AEC LAB MANUAL Procedure: 1. Connect the circuit as shown in the figure. 2. Switch on the variable DC power supply, keeping voltage knobs at minimum position and current knobs at maximum position and set reference voltage value. 3. Apply square wave or sine wave as an input signal at frequency say 1KHz and voltage 10V (p-p) 4. Observe the input and output waveforms on the CRO/DSO. 5. Vary the voltage and observe the clamping level of the output signal and note down the value of clamping level. Result: Dept. of ECE, KSSEM Page 17
  • 25. AEC LAB MANUAL DIODE CLIPPING CIRCUITS AIM: Testing Of diode clipping (Single and Double Ended) circuits for peak clipping. COMPONENTS REQUIRED: Sl.No Component Range Quantity 1 Resistor 10K 1 2 Diode 1N4001 2 3 DC variable Power supply (0-30) V 1 4 DSO - 1 5 Function Generator - 1 6 Connecting Wires - 1 set Clippers: Clipping is defined as removing some part of the a.c signal without affecting the other parts of the a.c signal. This kind of processing is useful in wave shaping, circuit protection and communications. Clipper circuit are also called limiter circuit, are used to eliminate portions of that are above or below a specified level. A simple application of a clipper is to limit the voltage at the input to the electronic circuit so as to prevent the breakdown of the transistor in the circuit. The circuit can be used to measure the frequency of the signal, so the amplitude is not an important part of the signal. Types of clipper circuits: 1. Series Clipper (Single ended and double ended) 2. Parallel Clipper (Single ended and double ended) Design of R The Value of R should be chosen as geometric mean of Rf and Rr of diode. Where Rf represents dynamic forward resistance and Rr represents reverse resistance of the diode. R = √ Say, Rf = 100Ω, Rr = 1MΩ, then R= 10KΩ. Dept. of ECE Page 18
  • 26. AEC LAB MANUAL PARALLEL CLIPPERS (SINGLE ENDED) PARALEL POSITIVE CLIPPER Assume 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 vi vo 0 90 180 270 360 450 540 630 720 810 Vi = 10VP-P, R = 10K, Vref = 1.4, VK = 0.6V Calculate VO. Case 1: Case 1: When Vi ≥ Vref + VK D = ON When Vi ≥ 1.4V + 0.6V D = ON VO = Vref + VK VO = 1.4V + 0.6V VO = 2V Case 2: Case 2: When Vi < Vref + VK D = OFF When Vi < 1.4V + 0.6V D = OFF VO = Vi VO = Vi TRANSFER CAHARACTERISTICS 3 2 1 0 -6 -4 -2 0 2 4 6 -1 -2 -3 -4 -5 -6 Dept. of ECE Page 19
  • 27. AEC LAB MANUAL PARALLEL NEGATIVE CLIPPER Assume 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 vi vo 0 90 180 270 360 450 540 630 720 810 Vi = 10VP-P, R = 10K, Vref = 1.4, VK = 0.6V Calculate VO. Case 1: Case 1: When Vi - [Vref + VK] D = ON When Vi - [1.4V+ 0.6V] D = ON VO = - [Vref + VK] VO = - [1.4V+ 0.6V] VO = - 2V Case 2: Case 2: When Vi - [Vref + VK] D = OFF When Vi - [1.4V+ 0.6V] D = OFF VO = Vi VO = Vi TRANSFER CHARACTERISTICS 6 5 4 3 2 1 0 -6 -4 -2 0 2 4 6 -1 -2 -3 Dept. of ECE Page 20
  • 28. AEC LAB MANUAL SERIES POSITIVE CLIPPERS Assume 6.00 5.00 4.00 3.00 2.00 1.00 0.00 -1.00 -2.00 -3.00 -4.00 -5.00 -6.00 Vi VO 0 90 180 270 360 450 540 630 720 810 Vi = 10VP-P, R = 10K, Vref = 2V, VK = 0.6V Calculate VO. Case 1: Case 1: When Vi [VR - VK] D = ON When Vi [2V-0.6V] D = ON VO = Vi + VK VO = - 4.3V Case 2: Case 2: When Vi > [VR - VK] D = OFF When Vi > [VR - VK] D = OFF VO = Vref VO = 2V TRANSFER CHARACTERISTICS 3.00 2.00 1.00 0.00 -6.00 -4.00 -2.00 0.00 2.00 4.00 6.00 -1.00 -2.00 -3.00 -4.00 -5.00 Dept. of ECE Page 21
  • 29. AEC LAB MANUAL SERIES NEGATIVE CLIPPER Assume 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 VI VO 0 90 180 270 360 450 540 630 720 810 Vi = 10VP-P, R = 10K, Vref = 2V, VK = 0.6V Calculate VO. Case1: When Vi -[ VR - VK] D = ON VO = Vi - VK Case 2: When Vi -[ VR - VK] D = ON VO = VR TRANSFER CHARACTERISTICS 6.00 5.00 4.00 3.00 2.00 1.00 0.00 -6.00 -4.00 -2.00 0.00 2.00 4.00 6.00 -1.00 -2.00 -3.00 Dept. of ECE Page 22
  • 30. AEC LAB MANUAL PARALLEL CLIPPING (DOUBLE ENDED) Assume 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 vi vo 0 90 180 270 360 450 540 630 720 810 Vi = 10VP-P, R = 10K, Vref1 = 1.4V, Vref2 = 1.4V, VK = 0.6V Calculate VO. Case1: Case 1: When Vi [VRef1 + VK] When Vi [1.4V + 0.6V] VO = [VRef1 + VK] VO = 2V Case 2: Case 2: When Vi [VRef2 + VK] When Vi [1.4V + 0.6V] VO = - [VRef2 + VK] VO = - 2V Case 3: Case 3: When - [VRef2 + VK] Vi < [Vref1 + VK] When - [1.4V + 0.6V] Vi < [1.4V + 0.6V] VO = Vi VO = Vi TRANSFER CHARACTERISTICS 3 2 1 0 -6 -4 -2 0 2 4 6 -1 -2 -3 Dept. of ECE Page 23
  • 31. AEC LAB MANUAL SERIES CLIPPING (DOUBLE ENDED) Assume 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 vi vo 0 90 180 270 360 450 540 630 720 810 Vi = 10VP-P, R = 10K, Vref1 = 1.4V, Vref2 = 1.4V, VK = 0.6V Calculate VO. Case 1: Case 1: When Vi [VRef1 + VK] D = ON When Vi [2V + 0.6V] D = ON VO = Vi - VK - VR VO = 5V - 0.6V - 1.4V VO = 3V Case 2: Case 2: When Vi [VRef1 + VK] D = OFF When Vi [VRef1 + VK] D = OFF VO = Vi - VK - VR VO = -5V + 0.6V + 1.4V VO = - 3V TRANSFER CHARACTERISTICS 4 3 2 1 0 -6 -4 -2 0 2 4 6 -1 -2 -3 -4 Dept. of ECE Page 24
  • 32. AEC LAB MANUAL RC COUPLED BJT AMPLIFIER AIM: Wiring of RC coupled single stage BJT amplifier and determination of the gain frequency response, input and output impedance. COMPONENTS REQUIRED: Sl.No Components Range Quantity 1 Transistor SL-100 1 2 Resistors 22K,2.2K,4.7K,470Ω 1 3 Capacitors 0.47μF,47μF 0.47 μF =2 47 μF=1 4 Variable power supply (0-30)V 1 5 DSO - 1 6 Function Generaator - 1 7 Connecting wires - 1 set THEORY: A common emitter amplifier is defined as an electronic circuit with an ac input voltage applied across the base and emitter pins of a bipolar junction transistor with the output voltage taken as the voltage from the collector pin to ground. As the name suggests, the emitter is connected to a reference ground. RC coupled amplifier is the one which amplifies the given small signal. Basically it is the multi stage amplifier which usually has two or more stages. In each stage, there will be there would be a CE amplifier present whose output is given as the input to the next stage. The function of the input capacitor is to block the base from any DC shift caused by the input signal. Allowing a DC shift to be felt at the base would continuously change the Q point of the amplifier, resulting in erratic effects on the amplifier’s output voltage. The input capacitor must allow all the ac signal components through. The function of the output capacitor is to block the collector from DC shift that might be caused by the load. Failure to do so would result in a Q-point shift. The bypass capacitor is used to short out the emitter resistor during ac operation. The two values of frequency for which the voltage gain of about 0.707 times the peak voltage gain are called the low and high frequency roll-off. These correspond to the minimum and maximum frequencies for the power carried by the signal is at most a factor of two smaller than the maximum. Hence, the difference between the two frequencies is called the half power bandwidth. Dept. of ECE, KSSEM Page 25
  • 33. AEC LAB MANUAL CIRCUIT DIAGRAM: Amplifier Design: Select transistor SL-100 having the following specifications IE = IC = 2mA, β = 100, VCE = 5V Selection of RE VCC = 10V; VE = ; VE = = 1V VE = IERE; RE = ; RE = = 0.5K; Select RE = 470Ω; Selection of RC: VCE = ; VCE = = 5V VCE = ICRC + VCE + VE RC = RC = 2KΩ; Select RC = 2.2K Ω; Dept. of ECE, KSSEM Page 26
  • 34. AEC LAB MANUAL Selection of R1 and R2: VB = VBE + VE; VB = 1.7V; VB = 1.7V = 10R2 = 1.7R1 + 1.7 R2; R1 = 4.8R2; Choose R2 = 4.7KΩ; R1 = 4.8 4.7K; R1 = 22.56KΩ Choose R1 = 22KΩ Selection of bypass capacitor CE: Let XCE = ; At f = 100Hz, = CE = 59 F; Choose CE = 47 F Selection of Coupling Capacitors: Select CC1 = CC2 = 0.47 F Procedure: 1. Connections are made as shown in the circuit diagram. 2. The input voltage Vin is adjusted to a convenient value (10mV to 50mV) within the distortion less limit and value must be kept constant throughout the experiment. 3. Frequency of the input signal is varied from 100Hz to 2MHz in steps and at each step, corresponding output VO is noted down. 4. All readings are tabulated and graph of voltage gain in dB Vs frequency is drawn on a Semi-log sheet. 5. 3dB bandwidth is determined from the frequency response curve. Dept. of ECE, KSSEM Page 27
  • 35. AEC LAB MANUAL TABULAR COLUMN: Frequency in Hz VO in Volts Gain in dB= 20log10(VO/Vin) 100Hz . . . . . . . . . . . . . . . 2MHz Input Impedance Procedure: 1. A DRB is connected in series with the input as shown in the figure. 2. In the mid frequency region (with constant gain) with zero resistance (all the knobs of the DRB in zero position) the output is measured. 3. Now the DRB resistance is increased till the output voltage falls to half of the initial value. 4. The corresponding DRB value gives the input impedance of the circuit. Dept. of ECE, KSSEM Page 28
  • 36. AEC LAB MANUAL Output impedance Procedure: 1. A DRB is connected in series with the input as shown in the figure. 2. In the mid frequency region (with constant gain) with maximum resistance (all the knobs of the DRB in maximum position) the output is measured. 3. Now the DRB resistance is decreased till the output voltage falls to half of the initial value. 4. The corresponding DRB value gives the output impedance of the circuit RESULT: Gain AV Bandwidth Input impedance Zi Output impedance ZO Dept. of ECE, KSSEM Page 29
  • 37. AEC LAB MANUAL HARTLEY OSCILLATOR AIM: Testing for the performance of BJT Hartley oscillator for fo =100KHz. COMPONENTS REQUIRED: Sl.No Components Range Quantity 1 Transistor SL-100 1 2 Resistors 22K,2.2K,4.7K,1K,470Ω, 1K POT 1 3 Capacitors 0.47μF,47μF 0.47 μF =2 47 μF=1 4 Variable power supply (0-30)V 1 5 DSO - 1 6 Function Generaator - 1 7 Connecting wires - 1 set 8 Decade Inductance box - 1 9 Decade Capacitane box - 1 THEORY: When the collector supply voltage Vcc is switched on, collector current starts rising and charges the capacitor C. When this capacitor is fully charged, it discharges through coils L1 and L2, setting up damped harmonic oscillations in the tank circuit. The oscillatory current in the tank circuit produces an a.c. voltage across L1 which is applied to the base emitter junction of the transistor and appears in the amplified form in the collector circuit. Feedback of energy from output (collector emitter circuit) to input (base-emitter circuit is) accomplished through auto transformer action. The output of the amplifier is applied across the inductor L1, and the voltage across L2 forms the feedback voltage. The coil L1, is inductively coupled to coil L2, and the combination acts as an auto-transformer. This energy supplied to the tank circuit overcomes the losses occurring in it. Consequently the oscillations are sustained in the circuit. The energy supplied to the tank circuit is in phase with the generated oscillations. The phase difference between the voltages across L1 and that across L2 is always 180° because the centre of the two is grounded. A further phase of 180° is introduced between the input and output voltages by the transistor itself. Thus the total phase shift becomes 360O (or zero), thereby making the feedback positive or regenerative which is essential for oscillations. Dept. of ECE, KSSEM Page 30
  • 38. AEC LAB MANUAL CIRCUIT DIAGRAM: Amplifier design: VCE = 5V , IC = 2mA, VCC = 2VCE = 10V VRE = ×VCC = ×10 = 1V RE = = = 500Ω. Choose 470 Ω. RC = = 2K. Choose 2.2KΩ. Assume hfe = 50 IB = = 0.04mA = 40μA VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V Dept. of ECE, KSSEM Page 31
  • 39. AEC LAB MANUAL R2 = = = = = 4.7KΩ. R1 = = = = = 22KΩ. Design of Tank Circuit: Let fo = 100KHz Choose L1 = 200 μH, L2 = 600 μH Choose fo = √ Calculate C = ? C = 330 μF PROCEDURE: 1. Connections are made as shown in the circuit diagram. 2. Measure the DC conditions. 3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output. 4. Note down the amplitude and frequency of the output wave and frequency haas to match with the theoritical frequency. RESULT: Frequency = Hz. Amplitude = V. Dept. of ECE, KSSEM Page 32
  • 40. AEC LAB MANUAL COLPITTS OSCILLATOR AIM: Testing for the performance of BJT Colpitts oscillator for fo =100KHz. COMPONENTS REQUIRED: Sl.No Components Range Quantity 1 Transistor SL-100 1 2 Resistors 22K,2.2K,47K,1K, 470Ω,1K, POT 1 3 Capacitors 0.47μF,47μF 0.47 μF =2 47 μF=1 4 Variable power supply (0-30)V 1 5 DSO - 1 6 Function Generaator - 1 7 Connecting wires - 1 set 8 Decade Inductance box - 1 9 Decade Capacitance box - 1 THEORY: The Colpitt’s oscillator is designed for generation of high frequency sinusoidal oscillations (radio frequencies ranging from 10 KHz to 100MHz). They are widely used in commercial signal generators up to 100MHz. Colpitt's oscillator is same as Hartley oscillator except for one difference. Instead of using a tapped inductance, Colpitt's oscillator uses a tapped capacitance. When the collector supply voltage Vcc is switched on, collector current starts rising and charges the capacitors C1 and C2. When these capacitors are fully charged, they discharge through coil L setting up damped harmonic oscillations in the tank circuit. The oscillatory current in the tank circuit produces an a.c. voltage across C1, C2. The oscillation across C2 is applied to base-emitter junction of the transistor and appears in the amplified form in the collector circuit and overcomes the losses occurring in the tank circuit. The feedback voltage (across the capacitor C2) is 180° out of phase with the output voltage (across the capacitor C1), as the centre of the two capacitors is grounded. A phase shift of 180° is produced by the feedback network and a further phase shift of 180° between the output and input voltage is produced by the CE transistor. Hence, the total phase shift is 360° or 0°, which is essential for sustained oscillations, as per, the Barkhausen criterion. Dept. of ECE, KSSEM Page 33
  • 41. AEC LAB MANUAL CIRCUIT DIAGRAM: AMPLIFIER DESIGN: VCE = 5V , IC = 2mA, VCC = 2VCE = 10V VRE = ×VCC = ×10 = 1V RE = = = 500Ω. Choose 470 Ω. RC = = 2K. Choose 2.2KΩ. Assume hfe = 50 IB = = 0.04mA = 40μA VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V Dept. of ECE, KSSEM Page 34
  • 42. AEC LAB MANUAL R2 = = = = = 4.7KΩ. R1 = = = = = 22KΩ. DESIGN OF TANK CIRCUIT: Let fo = 100KHz Choose C1 = C2 = 1000pF fo = √ Calculate L = ? L= 5mH PROCEDURE: 1. Connections are made as shown in the circuit diagram. 2. Measure the DC conditions. 3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output. 4. Note down the amplitude and frequency of the output wave and frequency haas to match with the theoritical frequency. RESULT: Frequency = Hz. Amplitude = V. Dept. of ECE, KSSEM Page 35
  • 43. AEC LAB MANUAL BJT-CRYSTAL OSCILLATOR AIM: Testing for the performance of the BJT- crystal oscillator for fo > 500KHz. COMPONENTS REQUIRED: Sl.No Components Range Quantity 1 Transistor SL-100 1 2 Crystal 2MHz 1 3 Resistors 22K, 2.7K, 47K, 470Ω, 1K POT 1 4 Capacitors 0.47μF, 47 μF 0.47 μF =2 47 μF=1 5 Variable power supply (0-30)V 1 6 Function Generator - 1 7 DSO - 1 8 Connecting wires - 1set THEORY: A crystal oscillator is basically a tuned oscillator using a pizeoelectric crystal asa resonant circuit. The crystal has a greatest stability in holding consant charge at whatever frequency the crystal is originally cut to operate. Crystal oscillators are used whenever great stability is required, such as communication, transmitters and recievers. Characteristics of a Quartz crystal A quartz crystal exihibits the property that whenever mechanical stress is applied across one set of its faces, a difference os potential develops acoss the opposite faces. This property of a crystal is called pizeoelectric effect. Similarly, a voltage applied across one set of faces of the crystal causes mechanical distortion in the cryatal shape. When alternating voltage is applied to a crystal, mechanical vibrations are set up- these vibrations having a natural resonating frequency dependent on the crystal. The inductor L and the cappacitor C represents electrical equivalents of crystal mass and compliance respectively, whereas resistance R is an electrical equivalent of the crystal structures internal friction. The shunt capacitance CM represents the capacitance due to mechanical mounting of the crystal. Because the crystal loses, represented by R, are small, the equivalent cryatal Q factor is high typically 20,000. Values of Q up to almost 106 can be achieved by using crystals. The crystal has two resonant frequencies. One resonant condition occurs when the reactances of the series RLC leg are equal. Depat. Of ECE, KSSEM Page 36
  • 44. AEC LAB MANUAL CIRCUIT DIAGRAM: Amplifier design: VCE = 5V , IC = 2mA, VCC = 2VCE = 10V VRE = ×VCC = ×10 = 1V RE = = = 500Ω. Choose 470 Ω. RC = = 2K. Choose 2.2KΩ. Assume hfe = 50 IB = = 0.04mA = 40μA VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V Depat. Of ECE, KSSEM Page 37
  • 45. AEC LAB MANUAL R2 = = = = = 4.7KΩ. R1 = = = = = 22KΩ. PROCEDURE: 1. Connections are made as shown in the circuit diagram. 2. Measure the DC conditions. 3. Vary the 1K potentiometer so as to get an undistorted sine wave at the output. 4. Note down the amplitude and frequency of the output wave and frequency haas to match with the theoritical frequency. RESULT: Frequency = Hz. Amplitude = V. Depat. Of ECE, KSSEM Page 38
  • 46. AEC LAB MANUAL RC PHASE SHIFT OSCILLATOR AIM: To generate the sinusoidal waveform of RF range using RC phase shift oscillator. COMPONENTS REQUIRED: Sl.No Components Range Quantity 1 Transistor SL-100 1 2 Resistors 22K,2.2K,47K,1K,1K and 10K POT 2.2K=4, Others=1 3 Capacitors 0.47μF, 0.02μF 0.47 μF =2 47 μF=1 4 Variable power supply (0-30)V 1 5 DSO - 1 6 Function Generator - 1 7 Connecting wires - 1 set . THEORY: The RC Oscillator which is also called a Phase Shift Oscillator produces a sine wave output signal using regenerative feedback from the resistor-capacitor combination. This regenerative feedback from the RC network is due to the ability of the capacitor to store an electric charge, (similar to the LC tank circuit). This resistor-capacitor feedback network can be connected as shown in the figure to produce a leading phase shift (phase advance network) or interchanged to produce a lagging phase shift (phase retard network) the outcome is still the same as the sine wave oscillations only occur at the frequency at which the overall phase-shift is 360o. By varying one or more of the resistors or capacitors in the phase-shift network, the frequency can be varied and generally this is done using a 3-ganged variable capacitor. Since the resistor-capacitor combination in the RC Oscillator circuit also acts as an attenuator producing an attenuation of -1/29th (Vo/Vi = β) per stage, the gain of the amplifier must be sufficient to overcome the losses and in our three mesh network above the amplifier gain must be greater than 29. The loading effect of the amplifier on the feedback network has an effect on the frequency of oscillations and can cause the oscillator frequency to be up to 25% higher than calculated. Then the feedback network should be driven from a high impedance output source and fed into a low impedance load such as a common emitter transistor amplifier but better still is to use an operational amplifier as it satisfies these conditions perfectly. Dept. of ECE, KSSEM Page 39
  • 47. AEC LAB MANUAL CIRCUIT DIAGRAM AMPLIFIER DESIGN: VCE = 5V , IC = 2mA, VCC = 2VCE = 10V VRE = ×VCC = ×10 = 1V RE = = = 500Ω. Choose 470 Ω. RC = = 2K. Choose 2.2KΩ. Assume hfe = 50 IB = = 0.04mA = 40μA Dept. of ECE, KSSEM Page 40
  • 48. AEC LAB MANUAL VR2 = VBE – VBE = 1V + 0.6V = 1.6V & VR1 = VCC - VR2 = 10 – 1.6V = 8.4V R2 = = = = = 4.7KΩ. R1 = = = = = 22KΩ. FEEDBACK CIRCUIT DESIGN: If the frequency for the RC phase shift oscillator is say, 1 KHz, Then, fo = √ = 1KHz Where k , Choose k=1, so RC = R = 2.2KΩ. Substituting these values in the frequency equation, we get C = 0.022μF. The current gain of the transistor, β 4K + 23 + PROCEDURE: 1. Connections are made as shown in the circuit diagram. 2. Measure the DC conditions. 3. Observe the sinusoidal waveform output and calculate the frequency using CRO/DSO. 4. Measure the phase difference between the output and at points A,B,C. 5. To observe the phase difference between the signals connect the output of the amplifier to channel1 of the CRO/DSO and connect A or B or C to channel2 of the CRO/DSO. 6. Go to X-Y mode to observe the Lissajous figure, and also to measure the phase difference between the output and A or B or C. RESULT: Dept. of ECE, KSSEM Page 41
  • 49. AEC LAB MANUAL VOLTAGE SERIES FEEDBACK AMPLIFIER AIM: To conduct an experiment on two-stage BJT small signal amplifier (with and without feedback). COMPONENTS AND EQUIPMENTS REQUIRED: Sl.No Components Range Quantity 1 Transistor SL-100 1 2 Resistors 22K,10K,2.2K,4.7K,470Ω,390 Ω,100 Ω 2 3 Capacitors 0.47μF,47μF 0.47 μF =3 47 μF=2 4 Variable power supply (0-30)V 1 5 DSO - 1 6 Function Generaator - 1 7 Connecting wires - 1 set THEORY: Feedback plays an important role in electronic circuits and the basic parameters such as input impedance, output impedance, voltage or current gain and band width, may be altered considerably in a desired direction by the use of feedback for a given amplifier. In any of the feedback amplifiers, a part of the output signal is taken from the output of the amplifier and is combined with the normal input signal and thereby the feedback is achieved. If the signal feedback is aid the input signal, then it is said to positive feedback and if it is opposing, it is said to be the negative feedback. Positive feedback is used in oscillators and negative feedback is used wherever the gain has to be stabilized, bandwidth is to be increased and distortion has to be reduced. There are four types of negative feedback amplifiers depending the input signal and output signal that is feedback. 1. Voltage- series feedback 2. Voltage-shunt feedback 3. Current-series feedback 4. Current-shunt feedback Voltage-Series Feedback Amplifier: In this case, the part of the output voltage for the amplifier is feedback, which is in series opposition with input. This reduces the gain, but stabilizes it. Also the input impedance and bandwidth increases and output impedance decreases. Dept. of ECE Page 42
  • 50. AEC LAB MANUAL CIRCUIT DIAGRAM Fig: Voltage Series amplifier without feedback Fig: Voltage Series amplifier with feedback Dept. of ECE Page 43
  • 51. AEC LAB MANUAL Amplifier design: It remains same as given for RC-coupled amplifier. Here β = = = , called as feedback factor. Select RE = 390Ω; RE11 = 100Ω; RF = 10KΩ PROCUDURE: 1. Connect the circuit as shown in the figure. Set the signal generator amplitude to 10mV peak to peak sine waveform and observe the input and output signals of the circuit simultaneously on the CRO/DSO. 2. By varying the frequency of the input from 100Hz to 2MHz range correspondingly note down the output voltage. 3. Plot the gain in dB against frequency in a semi log graph sheet. 4. From the graph determine the bandwidth. 5. Repeat the same procedure for with feedback case also. 6. Calculate the input and output impedance in both the cases. TABULAR COLUMN F in Hz VO(P-P) in V AV = Voltage gain in dB = 10log10AV Dept. of ECE Page 44
  • 52. AEC LAB MANUAL RESULT: Gain AV without Feedback Gain AV with Feedback Bandwidth without Feedback Bandwidth with Feedback Input impedance Zi without feedback Input impedance Zi with feedback Output impedance ZO without feedback Output impedance ZO with feedback Dept. of ECE Page 45
  • 53. AEC LAB MANUAL THEVENIN’S AND MAXIMUM POWER TRANSFER THEOREM AIM: To verify Theveinin’s theorem. COMPONENTS REQUIRED: Sl. No Components Range Quantity 1 Resistors 1K 4 2 DC variable Power supply (0-30) V 1 3 Multimeter - 1 4 Connecting Wires - 1 Set 5 DRB - 1 THEVENIN’S THEOREM: Statement: “Any linear, bilateral network containing energy sources and impedances can be replaced with equivalent circuit consisting of a Voltage Source in series with Impedance”. THEORY: M Leon Thevenin a French engineer in 1863 developed the most important theorem of all network theorems. Using Thevenin’s theorem any complex network can be replaced by a simple equivalent circuit. The new simple single loop equivalent circuit enables us to make rapid calculations of the current, voltage and power delivered to the load by the original network. It also helps us to find the best value of load resistance needed for a particular application. CIRCUIT DIAGRAM: Given complex circuit Fig. (1) Measure the voltage across Load Resistance RL, i.e. across A and B and call that voltage as V1. V1 =V. Dept. of ECE, KSSEM Page 46
  • 54. AEC LAB MANUAL Step 1: Equivalent Circuit to find VTH by opening Load Resistance RL across A and B Fig. (2) Measure the voltage across A and B and call that voltage as VTH. VTH =______V. Step 2: Equivalent Circuit to find RTH by removing RL across A and B and shorting the supply voltage. Fig. (3) Measure the Resistance across A and B and call that Resistance as RTH. RTH =_____Ω. Step3: Thevenin’s Equivalent circuit Fig. (4) Dept. of ECE, KSSEM Page 47
  • 55. AEC LAB MANUAL Measure the voltage across A and B and call that voltage as V2. V2 =_____V. If the voltage,V1 = V2, then Thevinin’s theorem is verified. THEORETICAL CALCULATION: VTH= RTH = +R2 PROCEDURE: 1. Connections are made as shown in fig. (1). 2. Keep the voltage knobs at minimum position and Current knobs at Maximum position and then switch on the power supply and adjust the voltage to say 5 Volts. 3. Measure the voltage across RL and note down as V1 from fig. (1). 4. To measure VTH, Open circuits the load resistor RL as shown in fig. (2), measure the voltage across terminal A and B, call that voltage as VTH. 5. To find the Thevinin’s impedance (RTH) measure the resistance between the terminals A and B after shorting the supply voltage as shown in fig. (3). 6. Thevinin’s equivalent circuit connections are made by setting supply voltage to VTH and decade resistance box to RTH and connect back the load resistor RL across A and B as shown in Fig. (4). 7. Now measure the Voltage across load resistor RL with respect to Thevinin’s equivalent circuit. i.e. V2 8. Verify the voltages V1 and V2. RESULT: Voltage across the load resistor RL with respect to complex circuit = V. Voltage across the load resistor RL with respect to Thevinin’s equivalent circuit = V. Dept. of ECE, KSSEM Page 48
  • 56. AEC LAB MANUAL MAXIMUM POWER TRANSFER THEOREM AIM: To verify maximum power transfer theorem. COMPONENTS REQUIRED: Sl No Components Range Quantity 1 Resistors 1.5 K 1 2 DC variable Power supply (0-30) V 1 3 Multimeter - 1 4 Connecting Wires - 1 Set 5 DRB - 1 MAXIMUM POWER TRANSFER THEOREM: Statement: Maximum power is delivered from a network to a load when the load resistance is equal to the Thevenin’s resistance of the network. THEORY: In many practical applications a circuit is designed to supply power to the load. For example in communication systems, antennas supply power to receivers, audio amplifiers supply power to load speakers, transmitters supply power to loads. Maximum power transfer theorem plays an important role in matching circuit’s loads. CIRCUIT DIAGRAM: Given complex circuit Fig. (1): Complex Network Dept. of ECE, KSSEM Page 49
  • 57. AEC LAB MANUAL Thevinin’s Equivalent circuit Fig. (2): Thevinin’s Network THEORITICAL CALCULATION: VTH = = 5V RTH = = 500Ω PROCEDURE: 1. The resistance value in DRB is varied and the Voltage is noted down. 2. Connections are made as shown in the figure. 3. The power P is calculated using P= V2/RL. 4. A graph of load resistance Vs Power is plotted. 5. The maximum power occurs when RL = RS. POWER Vs LOAD RESISTANCE CURVE: P Fig (3): Graph of Power v/s RL Dept. of ECE, KSSEM Page 50
  • 58. AEC LAB MANUAL TABULAR COLUMN RL in Ω VO in Volts P = V2/RL (mW) 100 Ω . . . . . . . . . . . . . . . 1K Ω RESULT: Dept. of ECE, KSSEM Page 51
  • 59. AEC LAB MANUAL CHARACTERISTICS OF RESONANT CIRCUITS AIM: To obtain the frequency response of RLC series and parallel resonant circuits and hence to determine bandwidth and Q-factor. COMPONENTS REQUIRED: Sl.No Components Range Quantity 1 Resistors 1KΩ 1 2 DSO - 1 3 Decade Capacitance Box - 1 4 Decade Inductance Box - 1 5 Function Generator - 1 6 Connecting wires - 1 set . THEORY: In a circuit containing capacitive and inductive components, the impedance of the circuit varies as the applied voltage’s frequency is varied. At one point of frequency, the impedance offered by the circuit will be purely resistive and so the current in the circuit and applied voltage will be in phase. This phenomenon is called resonance and the frequency which causes resonance is called resonant frequency. SERIES RESONANCE CIRCUIT: Dept. of ECE, KSSEM Page 52
  • 60. AEC LAB MANUAL DESIGN: fo = √ Let fo = 800Hz Assume R = 1KΩ C = 0.1μF Calculate L value L = 395.7mH PROCEDURE: 1. Connections are made as shown in the circuit diagram. 2. AC supply is switched on. Input voltage is adjusted to 10VP-P. 3. The frequency is gradually varied from 100Hz to 2KHz. Different values of ‘f’ using DSO and voltage is noted down. The results are tabulated in the tabular column. 4. Frequency response i.e a graph of frequency Vs current is drawn. 5. From the graph, resonant frequency fO is noted down at which current is maximum. 6. Lower half frequency and upper half frequency are noted down corresponding to a current of IO/√ . Bandwidth = f2 – f1 = Hz. 7. Q-factor = f2/(f2-f1). TABULAR COLUMN Frequency in Hz Output Voltage VO (V) Dept. of ECE, KSSEM Page 53
  • 61. AEC LAB MANUAL FREQUENCY RESPONSE CURVE VO (V) F (Hz) Fig: Graph of Voltage Vs Frequency RESULT: Resonant Frequency = Bandwidth = Upper and lower half frequencies = Q-factor = Dept. of ECE, KSSEM Page 54
  • 62. AEC LAB MANUAL PARALLEL RESONANCE CIRCUIT: : DESIGN: fo = √ Let fo = 800Hz Assume R = 1KΩ C = 0.1μF Calculate L value L = 395.7mH PROCEDURE: 1. Connections are made as shown in the circuit diagram. 2. AC supply is switched on. Input voltage is adjusted to 10VP-P. 3. The frequency is gradually varied from 100Hz to 2KHz. Different values of ‘f’ using DSO and voltage is noted down. The results are tabulated in the tabular column. 4. Frequency response i.e a graph of frequency Vs current is drawn. 5. From the graph, resonant frequency fO is noted down at which current is maximum. 6. Lower half frequency and upper half frequency are noted down corresponding to a current of IO/√ . Bandwidth = f2 – f1 = Hz. 7. Q-factor = f2/(f2-f1). Dept. of ECE, KSSEM Page 55
  • 63. AEC LAB MANUAL TABULAR COLUMN Frequency in Hz Output Voltage VO (V) FREQUENCY RESPONSE CURVE: VO(V) F(Hz) Fig: Graph of Voltage Vs Frequency Dept. of ECE, KSSEM Page 56
  • 64. AEC LAB MANUAL RESULT: Resonant Frequency = Bandwidth = Upper and lower half frequencies = Q-factor = Dept. of ECE, KSSEM Page 57
  • 65. AEC LAB MANUAL BJT DARLINGTON EMITTER FOLLOWER AIM: Wiring of BJT Darlington emitter follower with and without Bootstrapping and determination of the gain, input impedance and output impedance. COMPONENTS REQUIRED: Sl.No Components Range Quantity 1 Resistors 1K, 220K, 330K, 4.7K 1 2 Capacitors 0.47μF 2 3 Transistor SL-100 2 4 D.C Variable Power supply (0-30)V 1 5 Multimeter - 1 6 Connecting Wires - 1set 7 Decade Resistance box - 1 THEORY: In emitter follower, an input signal is applied to the base and the output is taken across the emitter. The emitter follower has reasonably high input impedance and may be used whenever impedance up to about 500K is needed. For higher input impedance, we may use two transistors to form Darlington pair. The output voltage is always less than the input voltage due to drop between the base and emitter. However, the voltage gain is approximately unity. In addition the output voltage is in phase with the input voltage. Hence it is said to follow the input voltage with an in phase relationship. This accounts for the terminology ’Emitter Follower’. The collector is at ac ground; therefore the circuit is actually common collector amplifier. This circuit presents high input impedance at the input and low output impedance at the output. It is therefore frequently used for impedance matching purposes, where load impedance is matched to source impedance for maximum signal transfer. The Darlington connection shown is a connection of two transistors which results in a current gain that is the product of the current gains of the individual transistors. Hence the Darlington pair operates as one ‘Super Beta Transistor’ offering a very high current gain. The Darlington Emitter follower is a CC configuration but has the following characteristics. Voltage Gain = Almost Unity Current Gain = Very High, a few thousands Input Impedance = High, hundreds of KΩ Output Impedance = Low, tens of Ohms Dept. of ECE, KSSEM Page 58
  • 66. AEC LAB MANUAL Bootstrapped Emitter Follower: To overcome the decrease in the input impedance due to the biasing resistors, the input circuit of fig.1 is modified by the addition of the resistor R3 and capacitor in between R1 and R2 as shown in fig.2. The capacitance is chosen large enough to act as a short circuit at the lowest frequency of operation. Hence the bottom of R3 is effectively connected to output and the top of R3 is at the input. Using the concept of Miller’s theorem, the biasing arrangement R1, R2, R3 represents the input impedance of R3/(1-AV), which is very very high as AV is almost equal to 1. The term bootstrapping arises from the fact that, if one end of the resistor of R3 changes in voltage, the other end of R3 moves through the same potential difference, it is as if R3 is pulling itself by its bootstraps. The output impedance in this case will be almost equal to that of Darlington circuit DESIGN: Let Q-point = (VCE2, IC2) = (5V, 5mA) Let VCC = 2 VCE2 = 10V RE = = = = RE = 1KΩ. Consider β1 = β2 = β = 50. IB2 = IE1 = = 0.1mA Therefore, IB1 = = = = 0.002mA. Applying KVL to B-E loop V2 = 0.6V + 0.6V + 5V = 6.2V R2 = = = 344KΩ. Select 330KΩ R1 = = = 190KΩ. Select 220KΩ Dept. of ECE, KSSEM Page 59
  • 67. AEC LAB MANUAL CIRCUIT DIAGRAM: Fig: Darlington Emitter follower without bootstrap Fig: Darlington Emitter follower with bootstrap Dept. of ECE, KSSEM Page 60
  • 68. AEC LAB MANUAL PROCEDURE: 1. Place the components on the bread/spring board as shown in the figure. 2. Connect the signal generator and apply a sine wave of peak-to-peak amplitude 1V, 1KHz. Connect the input and output of the circuit to the two channels of the CRO and observe the waveforms. 3. Gradually increase the input signal until the signal gets distorted. When this happens slightly reduce the input signal amplitude such that output is maximum undistorted signal. Then measure the amplitude of the input and output waveform. Calculate the voltage gain. 4. Connect input and output of the circuit to the two channels of the CRO/DSO and observe the waveforms. Note down the corresponding waveform on the graph. 5. Find the input and output impedance per given procedure. 6. Connect the bootstrap circuit and make the necessary changes as per figure. 7. Find the input and output impedance with this circuit. Input Impedance Zi 1. Adjust the input signal peak-peak in such that the output sine wave is not clipped. 2. Note down this value of the input Vin.(Let the frequency of the input signal be around 2KHz) 3. Note down the peak-peak amplitude of the corresponding output VO. 4. Connect a DRB (with zero resistance) in series with the function generator. 5. Increase the resistance in DRB and observe the magnitude of the output VO simultaneously on the CRO/DSO. 6. When the magnitude of the output VO is reduced to half of its original value, stop varying the potentiometer further and remove the DRB from the circuit. 7. Measure the value of resistance in DRB and this is measured value will be the input impedance of the circuit. Dept. of ECE, KSSEM Page 61
  • 69. AEC LAB MANUAL Output Impedance ZO 1. Adjust the input signal peak-peak in such that the output sine wave is not clipped. 2. Note down this value of the input Vin. 3. Note down the peak-peak amplitude of the corresponding output VO. 4. Connect a DRB (with maximum resistance) in parallel with the load. 5. When the magnitude of the output VO is reduced to half of its original value, stop varying the potentiometer further and remove the DRB from the circuit. 6. Measure the value of resistance in DRB and this is measured value will be the output impedance of the circuit. RESULT: Parameters AV = (VO/Vi) Zi ZO Without Bootstrap With Bootstrap Dept. of ECE, KSSEM Page 62
  • 70. AEC LAB MANUAL TRANSFORMER-LESS CLASS B PUSH-PULL POWER AMPLIFIER AIM: Testing of a transformer less class-B push pull power amplifier and determination of its conversion efficiency. COMPONENTS REQUIRED: Sl.No Components Range Quantity 1 Transistors SL-100, SK-100 1 2 Resistors 270Ω 2 3 Variable power supply (0-30)V 1 4 Function Generator - 1 5 DSO - 1 6 Decade Resistance box - 1 7 Connecting Wires - 1set THEORY: Push-pull amplifier is basically a class B amplifier, in which a transistor conducts for a half cycle. For complete conduction, such an amplifier uses two transistors. The arrangement of transistors is called complementary circuit. During the positive half of the input signal, the NPN transistor conducts and during negative half of the input signal PNP transistor conducts. The transistor conducts only if the input voltage across the threshold voltage of 0.7V. This is because input itself biases the transistors. During this interval, no transistors conducts or output is zero. This causes a distortion called crossover distortion. If the peak load-voltage equals the supply voltage, maximum efficiency occurs and the value is 78.5%. The main disadvantage is it uses two power supply and distortion itself. Dept. of ECE, KSSEM Page 63
  • 71. AEC LAB MANUAL CIRCUIT DIAGRAM: Fig. (1) PROCEDURE: 1. Place the components on the spring board and connect them as shown in the fig.(1). 2. Connect one channel of the CRO to input signal and connect second channel to the output. 3. Keep frequency of the function generator around 1KHz and increase the amplitude around 10V and observe the input and output waveforms. Observe the crossover distortion. 4. Gradually increase the input signal until the output signal gets distorted. When this happens slightly reduce the input signal amplitude such that output is maximum undistorted signal. Note down the Peak value of the output waveform and VCC. 5. Calculate the efficiency using the equation % efficiency = . Dept. of ECE, KSSEM Page 64
  • 72. AEC LAB MANUAL TABULAR COLUMN: RL in KΩ %Efficiency 1KΩ . . . . . . . . . . 10KΩ RESULT: The efficiency of the class B power amplifier for different load resistance is verified. Dept. of ECE, KSSEM Page 65
  • 73. AEC LAB MANUAL BIBLIOGRAPHY 1. “Electronic devices and circuit theory”, Robert L.Boylestad and Louis Nashelsky. 2. “Integrated electronics”, Jacob Millman and Christos C Halkias. 3. “Electronic devices and circuits”, David A. Bell. 4. “Electronic devices and circuits”, G.K.Mittal. Dept. of ECE, KSSEM Page 66
  • 74. AEC LAB MANUAL VIVA-VOCE QUESTIONS 1. What are conductors, insulators, and semi-conductors? Give egs. 2. Name different types of semiconductors. 3. What are intrinsic semiconductors and extrinsic semiconductors? 4. How do you get P-wpe and N-type semiconductors? 5. What is doping? Name different levels of doping. 6. Name different types of Dopants. . 7. What do you understand by Donor and acceptor atoms? 8. What is the other name for p-type and N-type semiconductors? 9. What are majority carriers and minority carriers? 10. What is the effect of temperature on semiconductors? 11. What is drift current? . 12. What is depletion region or space charge region? 13. What is junction potential or potential barrier in PN junctioI).? 14. What is a diode? Name different types of diodes and name its applications 15. What is biasing? Name different types w.r.t. Diode biasing 16. How does a diode behave in its forward and reverse biased conditions? 17. What is static and dyriantic resistance of diode? 18. Why the current in the fo~ard biased diode takes exponential path? 19. What do you understand 1?y AvaJanche breakdown and zener breakdown? 20. Why diode is called unidirectional device. 21. What is PIV of a diode 22. What is knee voltage or cut-in voltage? 23. What do you mean by transition capacitance or space charge capacitor? 24. What do you mean by diffusion capacitance or storage capacitance? 25. What is a transistor? Why is it called so? . 26. Name different types, of transistors? 27. Name different configurations in which the transistor is operated 28. Mention the applications of transistor. Explain how transistor is used as switch 29. What is transistor biasing? Why is it necessary? 30. What are the three different regions in which the transistor works? 31. Why trmisistor is called current controlled device? 32. What is FET? Why it is called so? 33. What are the parameters ofFET? 34. What are the characteristics of FET? 35. Why FET is known as voltage controlled device? 36. What are the differences between BJT and FET? 37. Mention applications ofFET. What is pinch offvQltage, VGS(ofJ) and lDss 38. What is an amplifier? What is the need for an amplifier circuit? 39. How do you classify amplifiers? , 40. What is faithful amplification? How do you achieve this? 41. What is coupling? Name different type.s of coupling 42. What is operating point or quiescent point? 43. What do you mean by frequency response of an amplifier? 44. What are gain, Bandwidth, lower cutoff frequency and upper cutoff frequency? 45. What is the figure of merit of an amplifier circuit? Dept. of ECE, KSSEM Page 67
  • 75. AEC LAB MANUAL 46. What are the advantages of RC coupled amplifier? 47. Why a 3db point is taken to calculate Bandwidth? 48. What is semi-log graph sheet? Why it is used to plot frequency response? 49. How do you test a diode, transistor, FET? 50. How do you identify the tenninals of Diode, Transistor& FET? Mention the type number of the devices used in your lab. 51. Describe the operation ofNPN transistor. Define reverse saturation current. 52. Explain Doping w.r.t. Three regions of transistor 53. Explain the terms hie/hib, hoelhob, hre/hrb, hre/hfb. 54. Explain thermal run-.taway. How it can'be prevented. 55. Define FET parameters and write the relation between them. 56. What are Drain Characteristics and transfer characteristics? 57. Explain the construction and working of FET 58. What is feedback? Name different types. 59. What is the effect of negative feedback on the characteristics of an amplifier? 60. Why common collector amplifier is known as emitter follower circuit? 61. What is the application of emitter follower ckt? 62. What is cascading and cascoding? Why do you cascade the amplifier ckts.? 63. How do you determine the value of capacitor? 64. Write down the diode current equation. 65. Write symbols of various passive and active components 66. How do you determine th~value of resistor by colour code method? 67. What is tolerance and power rating of resistor? 68. Name different types of resistors. 69. How do you c1assify resistors? 70. Name different types of capacitors.. 71. What are clipping circuits? Classify them. 72. Mention the application of clipping circuits. 73. What are clamping circuits? Classify them 74. What is the other name of clamping circuits? 75. Mention the applications of clamping circuits. 76. 'What is Darlington emitter follower circuit? 77. Can we increase the number of transistors in Darlington emitter follower circuit? Justify your answer. 78. What is the different between Darlington emitter follower circuit & Voltage follower circuit using Op-Amp. Which is better. 79. Name different types of Emitter follower circuits. 80. What is an Oscillator? Classify them. 81. What ar~ The Blocks, which fonns an Oscillator circuits? 82. What are damped & Un-damped Oscillations? 83. What are Barkhausen's criteria? 84. What type of oscillator has got frequency stability? 85. What is the disadvantage of Hartley & Colpiit's Oscillator? 86. Why RC tank Circuit Oscillator is used for AF range? 87. Why LC tank Circuit Oscillator is used for RF range? 88. What type of feedback is used in Oscillator circuit? 89. In a Transistor type No. SL 100 and in Diode BY 127, what does SL and BY stands Dept. of ECE, KSSEM Page 68
  • 76. AEC LAB MANUAL for 90. Classify Amplifiers based on: operating point selection. 91. What is the efficiency of Class B push pull amplifier? 92. What is the drawback of Class B Push pull Amplifier? How it is eliminated. 93. What is the advantage of having complimentary symmetry push pull amplifier? 94. What is Bootstrapping? What is the advantage of bootstrapping? 95. State Thevenin's Theorem and Max.power transfer theorem. 96. What is the figure of merit of resonance circuit? 97. What is the application of resonant circuit? 98. What is a rectifier? Classify. 99. What is the efficiency of half wave and full wave rectifier? 100. What is the advantage of Bridge rectifier of Centre tapped type FWR 101. What is the disadvantage of Bridge rectifier? 102. What is a filter? 103. Name different types of filter ckts. 104. Which type of filter is used in day to day application and why? 105. What is ripple and ripple factor? . 106. What is the theoretical value of ripple for Half Wave and .Full wave rectifier? 107. What is need for rectifier ckts. 108. Why a step down transformer is used at the input of Rectifier ckt. 109. What is TUF? . 110. What is regulation w.r.t rectifier? And how it is calculated? 111. What is figure of merit of Rectifier ckt. Dept. of ECE, KSSEM Page 69
  • 77. AEC LAB MANUAL QUESTION BANK ANALOG ELECTRONIC CIRCUITS LAB (10ESL37) 1. A) Design a positive clamping circuit for a given reference voltage of Vref=+2v. B) Design a negative clamping circuit for a given reference voltage ofVref= -2v. 2. Conduct a suitable experiment to shift the given reference voltage waveform by 4v a) Above the reference waveform b) Below the reference waveform 3. Design and rig up suitable circuits to shift the given reference sinusoidal input voltage waveform as shown in the fig. Vo V0 0 t -1.5 -6.5 2.5 -11.5 0 t -2.5 4. Design and rig up suitable circuits for the following transfer function as shown in the fig. For a sinusoidal/triangular input.(any two to be specified) Dept. of ECE, KSSEM Page 70
  • 78. AEC LAB MANUAL 5. Design a suitable circuit to clip the reference voltage waveform at two different levels. Also obtain its transfer characteristics. 6. Rig up a suitable circuit for A) Diode positive peak clipping. B) Diode negative peak clipping. 7. Conduct an experiment to determine the gain v/s frequency response, input and output impedances for a RC coupled single stage BJT amplifier. 8. Conduct an experiment to determine gain, input and output impedances for a Darlington emitter follower circuit with and without bootstrap. 9. Conduct an experiment to obtain a relationship between the bandwidths for a voltage series feedback circuit with and without feedback. 10. Design the LC oscillator circuits to generate frequency of oscillations at f=100 khz Using BJT. Dept. of ECE, KSSEM Page 71
  • 79. AEC LAB MANUAL 11. Design and rig up Hartley and colpitts oscillator circuits for a given frequency using BJT. 12. Conduct an experiment to generate the given frequency of an oscillation. (type of the oscillator to be specified). 13. Conduct a suitable experiment to introduce a phase shift of 1800 at an audio frequency Range. 14. Conduct a suitable experiment to produce sinusoidal oscillations using RC phase shift network. 15. Conduct a suitable experiment to determine the frequency of oscillations of a given crystal. 16. Determine ripple factor, regulation and efficiency of Half wave Rectifier Circuit with and Without Capacitor filter. 17. Determine ripple factor, regulation and efficiency of center tapped Full wave Rectifier Circuit with and Without Capacitor filter. Dept. of ECE, KSSEM Page 72
  • 80. AEC LAB MANUAL 18. Determine ripple factor, regulation and efficiency of Bridge Rectifier Circuit with and Without Capacitor filter. 19. Conduct an experiment to verify Thevenin’s Theorem and Maximum Power Transfer theorem. 20. Rig up suitable circuit to determine the Characteristics of Series and Parallel resonant circuits 21. Rig up suitable circuit to determine the Characteristics of RLC circuits. Dept. of ECE, KSSEM Page 73
  • 81. 1N5221B - 1N5263B — Zener Diodes July 2013 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Units PD Power Dissipation 500 mW Derate above 50°C 4.0 mW°C TSTG Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature Range -65 to +200 °C Lead Temperature (1/16 inch from case for 10 s) +230 °C Note: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Non-recurrent square wave Pulse Width = 8.3 ms, TA = 50°C © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N5221B - 1N5263B Rev. 1.2.0 1
  • 82. 1N5221B - 1N5263B — Zener Diodes Electrical Characteristics Values are at TA = 25°C unless otherwise noted . Device Min. Typ. Max. (%/°C) 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 2.28 2.375 2.565 2.66 2.85 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B 3.135 3.42 3.705 4.085 4.465 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 4.845 5.32 5.7 5.89 6.46 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B 7.125 7.79 8.265 8.645 9.5 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B 10.45 11.4 12.35 13.3 14.25 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B 15.2 16.15 17.1 18.05 19 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B 20.9 22.8 23.75 25.65 26.6 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B 28.5 31.35 34.2 37.05 40.85 1N5261B 1N5262B 1N5263B 44.65 48.45 53.2 VF Forward Voltage = 1.2V Max. @ IF = 200mA Note: 2. Zener Voltage (VZ) VZ (V) @ IZ (2) ZZ (Ω) @ IZ (mA) ZZK (Ω) @ IZK(mA) IR (μA) @ VR (V) TC 2.4 2.5 2.7 2.8 3 2.52 2.625 2.835 2.94 3.15 30 30 30 30 29 20 20 20 20 20 1,200 1,250 1,300 1,400 1,600 0.25 0.25 0.25 0.25 0.25 100 100 75 75 50 1.0 1.0 1.0 1.0 1.0 -0.085 -0.085 -0.080 -0.080 -0.075 3.3 3.6 3.9 4.3 4.7 3.465 3.78 4.095 4.515 4.935 28 24 23 22 19 20 20 20 20 20 1,600 1,700 1,900 2,000 1,900 0.25 0.25 0.25 0.25 0.25 25 15 10 5.0 2.0 1.0 1.0 1.0 1.0 1.0 -0.07 -0.065 -0.06 +/-0.055 +/-0.03 5.1 5.6 6 6.2 6.8 5.355 5.88 6.3 6.51 7.14 17 11 7.0 7.0 5.0 20 20 20 20 20 1,600 1,600 1,600 1,000 750 0.25 0.25 0.25 0.25 0.25 5.0 5.0 5.0 5.0 3.0 2.0 3.0 3.5 4.0 5.0 +/-0.03 0.038 0.038 0.045 0.05 7.5 8.2 8.7 9.1 10 7.875 8.61 9.135 9.555 10.5 6.0 8.0 8.0 10 17 20 20 20 20 20 500 500 600 600 600 0.25 0.25 0.25 0.25 0.25 3.0 3.0 3.0 3.0 3.0 6.0 6.5 6.5 7.0 8.0 0.058 0.062 0.065 0.068 0.075 11 12 13 14 15 11.55 12.6 13.65 14.7 15.75 22 30 13 15 16 20 20 9.5 9.0 8.5 600 600 600 600 600 0.25 0.25 0.25 0.25 0.25 2.0 1.0 0.5 0.1 0.1 8.4 9.1 9.9 10 11 0.076 0.077 0.079 0.080 0.082 16 17 18 19 20 16.8 17.85 18.9 19.95 21 17 19 21 23 25 7.8 7.4 7.0 6.6 6.2 600 600 600 600 600 0.25 0.25 0.25 0.25 0.25 0.1 0.1 0.1 0.1 0.1 12 13 14 14 15 0.083 0.084 0.085 0.085 0.086 22 24 25 27 28 23.1 25.2 26.25 28.35 29.4 29 33 35 41 44 5.6 5.2 5.0 4.6 4.5 600 600 600 600 600 0.25 0.25 0.25 0.25 0.25 0.1 0.1 0.1 0.1 0.1 17 18 19 21 21 0.087 0.088 0.088 0.089 0.090 30 33 36 39 43 31.5 34.65 37.8 40.95 45.15 49 58 70 80 93 4.2 3.8 3.4 3.2 3.0 600 700 700 800 900 0.25 0.25 0.25 0.25 0.25 0.1 0.1 0.1 0.1 0.1 23 25 27 30 33 0.09 0.092 0.093 0.094 0.095 47 51 56 49.35 53.55 58.8 105 125 150 2.7 2.5 2.2 1000 1100 1300 0.25 0.25 0.25 0.1 0.1 0.1 36 39 43 0.095 0.096 0.096 The zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (TL) at 30°C ± 1°C and 3/8” lead length. © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N5221B - 1N5263B Rev. 1.2.0 2
  • 83. 1N5221B - 1N5263B — Zener Diodes Top Mark Information Device Line 1 Line 2 Line 3 1N5221B LOGO 22 1B 1N5222B LOGO 22 2B 1N5223B LOGO 22 3B 1N5224B LOGO 22 4B 1N5225B LOGO 22 5B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B LOGO LOGO LOGO LOGO LOGO 22 22 22 22 23 6B 7B 8B 9B 0B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B LOGO LOGO LOGO LOGO LOGO 23 23 23 23 23 1B 2B 3B 4B 5B 1N5236B 1N5237B 1N5238B 1N5239B 1N5240B LOGO LOGO LOGO LOGO LOGO 23 23 23 23 24 6B 7B 8B 9B 0B 1N5241B 1N5242B 1N5243B 1N5244B 1N5245B LOGO LOGO LOGO LOGO LOGO 24 24 24 24 24 1B 2B 3B 4B 5B 1N5246B 1N5247B 1N5248B 1N5249B 1N5250B LOGO LOGO LOGO LOGO LOGO 24 24 24 24 25 6B 7B 8B 9B 0B 1N5251B 1N5252B 1N5253B 1N5254B 1N5255B LOGO LOGO LOGO LOGO LOGO 25 25 25 25 25 1B 2B 3B 4B 5B 1N5256B 1N5257B 1N5258B 1N5259B 1N5260B LOGO LOGO LOGO LOGO LOGO 25 25 25 25 26 6B 7B 8B 9B 0B 1N5261B 1N5262B 1N5263B LOGO LOGO LOGO 26 26 26 1B 2B 3B © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N5221B - 1N5263B Rev. 1.2.0 3
  • 84. 1N5221B - 1N5263B — Zener Diodes Top Mark Information (Continued) General Requirements: 1.0 Cathode Band 2.0 First Line: F - Fairchild Logo 3.0 Second Line: Device name - For 1Nxx series: 4th to 5th characters of the device name. For BZxx series: 5th to 6th characters of the device name. 4.0 Third Line: Device name - For 1Nxx series: 6th to 7th characters of the device name. For BZXyy series: Voltage rating 5.0 Devices shall be marked as required in the device specification (PID or FSC Test Spec). 6.0 Maximum no. of marking lines: 3 7.0 Maximum no. of digits per line: 2 8.0 FSC logo must be 20 % taller than the alphanumeric marking and should occupy the 2 characters of the specified line. 9.0 Marking Font: Arial (Except FSC Logo) 10.0 First character of each marking line must be aligned vertically. 11.0 All device markings must be based on Fairchild device specification. © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N5221B - 1N5263B Rev. 1.2.0 4
  • 85. 1N5221B - 1N5263B — Zener Diodes Physical Dimensions DO-35 25.40 MIN (2X) 0.533 0.460 4.56 3.05 1.91 1.53 NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC DO-204, VARIATION AH. B) HERMETICALLY SEALED GLASS PACKAGE. C) PACKAGE WEIGHT IS 0.137 GRAM. D) ALL DIMENSIONS ARE IN MILLIMETERS. E) DRAWING FILE NAME: DO35AREV02 Figure 1. AXIAL LEADED; GLASS; JEDEC DO204; VARIATION AH (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/DO/DO35A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-DO35A_TC.pdf. © 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N5221B - 1N5263B Rev. 1.2.0 5
  • 86. TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool¥ AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ FACT® FAST® FastvCore¥ FETBench¥ FPS¥ F-PFS¥ FRFET® Global Power ResourceSM GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver¥ OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ Sync-Lock™ ®* TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 © Fairchild Semiconductor Corporation www.fairchildsemi.com
  • 87. AEC LAB MANUAL Dept. of ECE, KSSEM Page 74
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  • 90. AEC LAB MANUAL Dept. of ECE, KSSEM Page 77
  • 91. AEC LAB MANUAL VALUE(pF) CODE VALUE(pF) VALUE(uF) CODE 1.5pF 1,000pF .001uF 102 3.3pF 1,500pF .0015uF 152 10pF 2,000pF .002uF 202 15pF 2,200pF .0022uF 222 20pF 4,700pF .0047uF 472 30pF 5,000pF .005uF 502 33pF 5,600pF .0056uF 562 47pF 6,800pF .0068uF 682 56pF .01uF 103 68pF .015 75pF .02 203 82pF .022 223 91pF .033 333 100pF 101 .047 473 120pF 121 .05 503 130pF 131 .056 563 150pF 151 .068 683 180pF 181 .1 104 220pF 221 .2 204 330pF 331 .22 224 470pF 471 .33 334 560pF 561 .47 474 680pF 681 .56 564 750pF 751 1 105 820pF 821 2 205 Dept. of ECE, KSSEM Page 78
  • 92. AEC LAB MANUAL Capacitor Types and colors: 1pf - 1800pf Yellow Ceramic Disk or Blue or Yellow Monolithics .001; .01; .022; .047; 0.1; 0.47; 1uF (C96 on K2) Red Monolithics Temperature stable caps are marked "NP0", "C0G" or have a black top. Capacitor Marking Table (Ceramic and Monolithic Cap's) IMPORTANT: Capacitors with values below 100 pf may be marked two ways: Either with just two digits (22 pF = "22") or three digits (22 pF = "220",). In the latter case the third digit signifies the number of zeros following the first two digits. "220" = 22 pF, "221" = 220 pF, "222" = 2200 pF. VALUE MARKING VALUE MARKING VALUE MARKING 1pf; 3pf; 5pf 1; 3; 5 2.7, 3 or 3.3 pF can be interchanged with each other. 4.7 or 5 pF can be interchanged with each other. 10 pf 10 or 100 0.001 uF 102 0.10 uF 104 12 pf 12 or 120 0.0012uF (1200pf) 122 0.12 uF 124 15 pf 15 or 150 0.0015uF 152 0.15 uf 154 18 pf 18 or 180 0.0018 uF (1800pf) 182 0.18 uF 184 22 pf 22 or 220 0.0022uF 222 0.22 uF 224 27 pf 27 or 270 0.0027uF 272 0.27 uF 274 33 pf 33 or 330 0.0033 uF 332 0.33 uF 334 39 pf 39 or 390 0.0039uF 392 0.39 uF 394 47 pf 47 or 470 0.0047uF 472 0.47 uF 474 58 pf 58 or 580 0.0056uF 562 0.56 uF 564 68 pf 68 or 680 0.0068uF 682 0.68 uF 684 82 pf 82 or 820 0.0082uF 822 0.82 uF 824 100 pf 101 0.01 uF 103 1uF 105 or 1uf 120 pf 121 0.012 uF 123 150 pf 151 0.015 uF 153 180 pf 181 0.018 uF 183 220 pf 221 0.022 uF 223 270 pf 271 0.027 uF 273 330 pf 331 0.033 uF 333 390 pf 391 0.039 uF 393 470 pf 471 0.047 uF 473 560 pf 561 0.056 uF 563 680 pf 681 0.068 uF 683 820 pf 821 0.082 uF 823 Dept. of ECE, KSSEM Page 79
  • 93. AEC LAB MANUAL Dept. of ECE, KSSEM Page 80