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Exploration of Nanoelectronics 
Built with Novel Materials Systems 
December 2014 
Jeong Seuk Kang 
Materials Science and Engineering 
Electrical Engineering & Computer Sciences 
University of California, Berkeley
2 
Jeong Seuk (Louis) Kang 
UC Berkeley Senior majoring in 
 Materials Science and Engineering 
 Electrical Engineering & Computer Sciences 
8 co-author publications & 
1 first-author publication submitted 
on two-dimensional semiconductor materials 
Graduate Fellowship 
 Samsung Scholarship (covering both tuition and stipend throughout my entire PhD) 
Research Experience 
 Novel electronics design and fabrication with Prof. Ali Javey (UC Berkley EECS) 
 Characterization of low-dimensional materials with Prof. Junqiao Wu (UC Berkeley MSE) 
 Li-ion battery pack design for electric vehicles with Prof. Dennis Lieu (UC Berkeley Mech. E) 
 Cost-benefit analysis on solar industry in developing countries with Prof. Daniel Kammen 
(UC Berkeley Energy and Resources Group)
3 
Motivation 
Device scaling needs: 
LG : gate length 
T : channel length 
T < ~ 1/3 LG T < ~ 2/3 
LG Device miniaturization at extreme (For LG <5 nm, T ~ 2 nm) 
 This demands materials control at unprecedented level – atomic perfection needed 
 Ultimate scaling: the channel and the gate dielectric should be only a monolayer thick
4 
Motivation 
Layered Chalcogenides: atomic level uniformity and new opportunities 
c/2 
X 
M 
EC 
EV 
-2 
-3 
-4 
-5 
-6 
-7 
-8 
-9 
(eV) 
vac 
E relative to E 
… 
New library of semiconductors, scalable down to a monolayer 
Lack surface dangling bonds; no native oxide 
Uniform thickness down at the atomic level 
sharp band edges!
5 
Stable Doping 
 p-Doping via Covalent Functionalization w/ NO2 
P. Zhao, D. Kiriya, A. Azcatl, C. Zhang, M. Tosun, Y.-S. Liu, M. Hettick, J. S. Kang, S. McDonnell, S. KC, J. Guo, K. Cho, R. M Wallace, A. Javey. "Air 
Stable p-Doping of WSe2 by Covalent Functionalization", ACS Nano (2014) 
 n-Doping via Charge Transfer from Benzyl Viologen 
D. Kiriya, M. Tosun, P. Zhao, J. S. Kang, A. Javey. "Air-stable surface charge transfer doping of MoS2 by benzyl viologen ”, JACS (2014)
6 
Strain Engineering 
 Strain-induced Indirect-to-Direct Transition in WSe2 
S. B. Desai, G. Seol, J. S. Kang, H. Fang, C. Battaglia, R. Kapadia, J. W. Ager, J. Guo, and A. Javey. "Strain-Induced Indirect to Direct Bandgap Transition in 
Multilayer WSe2", Nano Letters, (2014)
7 
Contact Engineering 
 MoOx p-Type Contacts for MoS2 PFETs 
S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J. S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, R. M. Wallace, A. Javey, "MoS2 P-type Transistors and 
Diodes Enabled by High Workfunction MoOx Contacts", Nano Letters, (2014)
8 
Heterostructures 
 Interlayer Coupling between TMDC monolayers 
H. Fang, C Battaglia, C. Carraro, S. Nemsak, B. Ozdol, J. S. Kang, H. A. Bechtel, S. B. Desai, F. Kronast, A. A. Unal, G. Conti, C. Conlon, G. K. Palsson, 
M. C. Martin, A. M. Minor, C. S. Fadley, E. Yablonovitch, R. Maboudian, A. Javey. "Strong interlayer coupling in van der Waals heterostructures built from 
single-layer chalcogenides”, PNAS, (2014) 
 FET built from all 2D components 
T. Roy, M. Tosun, J. S. Kang, A. B. Sachid, S. B. Desai, M. Hettick, C. C. Hu, and A. Javey. "Field-Effect Transistors Built from All Two-Dimensional 
Material Components”, ACS, (2014)
9 
Materials Characterization 
 Defects Activated Photoluminescence (PL) in TMDCs 
Sefaattin Tongay, Joonki Suh, Can Ataca, Fan Wen, Alexander Luce, J. S. Kang, Jonathan Liu, Changhyun Ko, Jian Zhou, Jingbo Li, Jeffrey C. Grossman 
and Junqiao Wu, Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons, Sci. Rep. 
(2013) 
 PL Engineering via Physisorption Gating 
Sefaattin Tongay, Jian Zhou, Can Ataca, Jonathan Liu, J. S. Kang, Tyler S. Matthews, Long You, Jingbo Li, Jeffrey C. Grossman and Junqiao Wu, Broad-range 
modulation of light emission in two-dimensional semiconductors by molecular physi-sorption gating, Nano Lett, (2013)
10 
Current Projects 
 Light Outcoupling Engineering in 2D materials (submitted) 
D. Lien*, J. S. Kang*, M. Amani, K. Chen, M. Tosun, H. Wang, T. Roy, M. Eggleston1, M. Wu, S. Lee, J. He, A. Javey. 
Engineering Light Outcoupling in 2D Materials, in preparation. (*These authors contributed euqally to this work) 
 Deterministic Nucleation and Growth of Ultralarge grain (>100 μm) III-V 
Thin-Films on Nonepitaxial Substrates using the Thin-Film Vapor-Liquid- 
Solid Growth Mode

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JeongSeuk_Kang_Research_Presentation_Dec2014

  • 1. Exploration of Nanoelectronics Built with Novel Materials Systems December 2014 Jeong Seuk Kang Materials Science and Engineering Electrical Engineering & Computer Sciences University of California, Berkeley
  • 2. 2 Jeong Seuk (Louis) Kang UC Berkeley Senior majoring in  Materials Science and Engineering  Electrical Engineering & Computer Sciences 8 co-author publications & 1 first-author publication submitted on two-dimensional semiconductor materials Graduate Fellowship  Samsung Scholarship (covering both tuition and stipend throughout my entire PhD) Research Experience  Novel electronics design and fabrication with Prof. Ali Javey (UC Berkley EECS)  Characterization of low-dimensional materials with Prof. Junqiao Wu (UC Berkeley MSE)  Li-ion battery pack design for electric vehicles with Prof. Dennis Lieu (UC Berkeley Mech. E)  Cost-benefit analysis on solar industry in developing countries with Prof. Daniel Kammen (UC Berkeley Energy and Resources Group)
  • 3. 3 Motivation Device scaling needs: LG : gate length T : channel length T < ~ 1/3 LG T < ~ 2/3 LG Device miniaturization at extreme (For LG <5 nm, T ~ 2 nm)  This demands materials control at unprecedented level – atomic perfection needed  Ultimate scaling: the channel and the gate dielectric should be only a monolayer thick
  • 4. 4 Motivation Layered Chalcogenides: atomic level uniformity and new opportunities c/2 X M EC EV -2 -3 -4 -5 -6 -7 -8 -9 (eV) vac E relative to E … New library of semiconductors, scalable down to a monolayer Lack surface dangling bonds; no native oxide Uniform thickness down at the atomic level sharp band edges!
  • 5. 5 Stable Doping  p-Doping via Covalent Functionalization w/ NO2 P. Zhao, D. Kiriya, A. Azcatl, C. Zhang, M. Tosun, Y.-S. Liu, M. Hettick, J. S. Kang, S. McDonnell, S. KC, J. Guo, K. Cho, R. M Wallace, A. Javey. "Air Stable p-Doping of WSe2 by Covalent Functionalization", ACS Nano (2014)  n-Doping via Charge Transfer from Benzyl Viologen D. Kiriya, M. Tosun, P. Zhao, J. S. Kang, A. Javey. "Air-stable surface charge transfer doping of MoS2 by benzyl viologen ”, JACS (2014)
  • 6. 6 Strain Engineering  Strain-induced Indirect-to-Direct Transition in WSe2 S. B. Desai, G. Seol, J. S. Kang, H. Fang, C. Battaglia, R. Kapadia, J. W. Ager, J. Guo, and A. Javey. "Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2", Nano Letters, (2014)
  • 7. 7 Contact Engineering  MoOx p-Type Contacts for MoS2 PFETs S. Chuang, C. Battaglia, A. Azcatl, S. McDonnell, J. S. Kang, X. Yin, M. Tosun, R. Kapadia, H. Fang, R. M. Wallace, A. Javey, "MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts", Nano Letters, (2014)
  • 8. 8 Heterostructures  Interlayer Coupling between TMDC monolayers H. Fang, C Battaglia, C. Carraro, S. Nemsak, B. Ozdol, J. S. Kang, H. A. Bechtel, S. B. Desai, F. Kronast, A. A. Unal, G. Conti, C. Conlon, G. K. Palsson, M. C. Martin, A. M. Minor, C. S. Fadley, E. Yablonovitch, R. Maboudian, A. Javey. "Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides”, PNAS, (2014)  FET built from all 2D components T. Roy, M. Tosun, J. S. Kang, A. B. Sachid, S. B. Desai, M. Hettick, C. C. Hu, and A. Javey. "Field-Effect Transistors Built from All Two-Dimensional Material Components”, ACS, (2014)
  • 9. 9 Materials Characterization  Defects Activated Photoluminescence (PL) in TMDCs Sefaattin Tongay, Joonki Suh, Can Ataca, Fan Wen, Alexander Luce, J. S. Kang, Jonathan Liu, Changhyun Ko, Jian Zhou, Jingbo Li, Jeffrey C. Grossman and Junqiao Wu, Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons, Sci. Rep. (2013)  PL Engineering via Physisorption Gating Sefaattin Tongay, Jian Zhou, Can Ataca, Jonathan Liu, J. S. Kang, Tyler S. Matthews, Long You, Jingbo Li, Jeffrey C. Grossman and Junqiao Wu, Broad-range modulation of light emission in two-dimensional semiconductors by molecular physi-sorption gating, Nano Lett, (2013)
  • 10. 10 Current Projects  Light Outcoupling Engineering in 2D materials (submitted) D. Lien*, J. S. Kang*, M. Amani, K. Chen, M. Tosun, H. Wang, T. Roy, M. Eggleston1, M. Wu, S. Lee, J. He, A. Javey. Engineering Light Outcoupling in 2D Materials, in preparation. (*These authors contributed euqally to this work)  Deterministic Nucleation and Growth of Ultralarge grain (>100 μm) III-V Thin-Films on Nonepitaxial Substrates using the Thin-Film Vapor-Liquid- Solid Growth Mode