1. STUDY OF THE FABRICATION
OF SEMICONDUCTOR LASER
DIODES
Done At
SOLID STATE PHYSICS
LABORATORY(DRDO)
PREPARED BY:-
Uttam Singh Thakran
09196504912
Electrical and Electronics Engineering
2. TOPICS TO BE COVERED
Introduction to lasers
Principle and theory of lasers
Types of lasers
Properties of lasers
Applications of lasers
Introduction to semiconductor lasers
Operation of semiconductor laser diode
Types of semiconductor lasers
Applications
Overview of fabrication process
Steps for fabrication process
conclusion
3. Introduction to lasers
LASER is an acronym for “Light
Amplification by Stimulated Emission of
Radiation”, coined in 1957 by the laser
pioneer Gordon Gould.
The term “Optical Maser” (MASER=
Microwave Amplification by Stimulated
Emission of Radiation) was initially used,
but later replaced with “laser”.
Laser technology is at the core of the
wider area of photonics, essentially
because laser light has a number of very
special properties.
4. Principle of LASER
The principle of laser is based on the stimulated
emission of light.
The components of a typical laser are:-
1. Gain Medium for Population energy
2. Laser Pumping energy
3. Cavity
4.Reflector
5.Laser Beam
5. Theory of LASER
Spontaneous Emission
Stimulated Emission
Population Inversion
Spontaneous Emission Stimulated Emission
6. Types of LASER
Gas Lasers
Chemical Lasers
Excimer(Excited Dimer) Lasers
Dye Lasers
Semiconductor lasers
7. Properties of LASER
Lasers show three important properties:-
Monochromaticity
Coherence (Properties of Lasers)
Directionality
8. Applications of LASER
Manufacturing
Medical applications
Military applications
Communication
Data storage
9. Introduction to semiconductor laser
diodes
A semiconductor laser diode is formed when
a crystal is doped to produce to produce an
n-type region and a p-type region, one above
the other resulting in a p-n junction or diode.
A laser diode is powered by injecting electric
current and therefore, they are sometimes
referred to as injection laser diodes.
Laser diodes find a wide use in
telecommunications. Infrared and red laser
diodes are used in CD players, CDROMs and
in DVD technology.
Violet lasers are used in HD DVD and blu-ray
technology.
10. Operation of semiconductor laser
diode
A typical Laser diode consists of two semiconductors,
one sandwiched above the other.
Top semiconductor is GaAs- Provides holes. It is a P-
type semiconductor.
At Bottom we use GaAs and Se(Gallium Arsenide and
Selinium). It acts as N-type semiconductor.
P-N junction is between both the semiconductor.
When current is passed through semiconductors then
Electrons and Holes starts moving towards P-N junction.
Electrons from N-type semiconductor and Holes from P-
type semiconductor combines.
11. Since, Holes exists at lower level, hence free Electron
can combine with it only after radiating energy in the
form of Photon.
The top and bottom of P-N junction is coated by a
mirrored material in order to trap the Photon of light.
This Photon encourages other Electrons and Holes to
generate Photons which will be in same Phase and the
process will continue until the P-N junction is filled with
Laser light.
Some of Laser light exits in rear side which will fall on
Photodiode and uses this information to regulate the
voltage to Laser Diode.
Large amount of diffracted light exits through front of
laser diode and the diffracted light is then made into a
single beam by using Collimating Lens.
12. Types of semiconductor laser
diodes
Double hetero-structure laser
Quantum well laser
Quantum cascade laser
Separate confinement hetero-junction laser
VCSEL(Vertical Cavity Surface Emitting
Lasers)
During our fabrication process of
semiconductor laser diode at SSPL, we have
only used Quantum well lasers.
13. Applications of semiconductor laser
diodes
Laser Range Finder(LRF)……..(1)
Proximity Fuses............................(2)
Dazzler weapon……………....(3)
(1) (2) (3)
14. Overview of the fabrication process
The fabrication process for Quantum well
semiconductor laser is shown here.
Steps are performed in cleanroom facility
under contamination control because this
laser deals with micro-size features and
minor contaminations can be a critical risk.
More attention is required in dealing with a
piece of wafer than to the whole wafer.
Since, whole wafer is expensive
therefore a piece of wafer is suitable
to develop the process.
15. Steps for the fabrication process
There are several steps involved in the
fabrication process which are
mentioned below.
16. EPITAXIAL GROWTH
(GaAs wafer)
Cap
Cladding
Waveguide
Active Region
Waveguide
Cladding
Substrate
17. PHOTOLITHOGRAPHY FOR MESA
(spin coating photoresist on wafer)
(MESA patterning by photolithography process)
Photoresist
Photoresist
18. MASK ETCHING
(wet MESA Etching of GaAs wafer)
(Removing photoresist after etching process)
Photoresist
Cap
Cap
Substrate
19. DIECTRIC(SiO2) DEPOSITION
(oxide layer deposition on E-beam evaporator)
(stripe patterning on oxide by photolithography)
SiO2
Photoresist
SiO2
21. (Metal deposition on N-side)
For P-side ohmic contact, Chromium(Cr) and Gold(Au) are
deposited by E-beam evaporator.
The next step is the polishing of the bottom side of GaAs
substrate for N-side contact.
For N-side ohmic contacts Ge(Germanium), Ni(Nickel) and
Au(Gold) are deposited by E-beam evaporator.
N contact
22. CLEAVING PROCESS
In this step, each laser is cleaved by hand. After
that, the facets of Lasers are coated with
Asymmetric Reflectivities.
One facet is Partially Reflecting(PR), from which
Laser comes out, whereas the other facet is High
Reflecting(HR) which reflects Laser beam towards
the PR facet.
Coating the facet
23. BONDING AND PACKAGING
(Die attach and wire bond on heat sink)
The last step is the Bonding process between heat-sink
with Indium solder. Indium solder is widely used to
bond Semiconductor Lasers due to its simplicity and it
can bond directly to Copper(Cu).