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STUDY OF THE FABRICATION
OF SEMICONDUCTOR LASER
DIODES
Done At
SOLID STATE PHYSICS
LABORATORY(DRDO)
PREPARED BY:-
Uttam Singh Thakran
09196504912
Electrical and Electronics Engineering
TOPICS TO BE COVERED
 Introduction to lasers
 Principle and theory of lasers
 Types of lasers
 Properties of lasers
 Applications of lasers
 Introduction to semiconductor lasers
 Operation of semiconductor laser diode
 Types of semiconductor lasers
 Applications
 Overview of fabrication process
 Steps for fabrication process
 conclusion
Introduction to lasers
 LASER is an acronym for “Light
Amplification by Stimulated Emission of
Radiation”, coined in 1957 by the laser
pioneer Gordon Gould.
 The term “Optical Maser” (MASER=
Microwave Amplification by Stimulated
Emission of Radiation) was initially used,
but later replaced with “laser”.
 Laser technology is at the core of the
wider area of photonics, essentially
because laser light has a number of very
special properties.
Principle of LASER
 The principle of laser is based on the stimulated
emission of light.
 The components of a typical laser are:-
1. Gain Medium for Population energy
2. Laser Pumping energy
3. Cavity
4.Reflector
5.Laser Beam
Theory of LASER
 Spontaneous Emission
 Stimulated Emission
 Population Inversion
Spontaneous Emission Stimulated Emission
Types of LASER
 Gas Lasers
 Chemical Lasers
 Excimer(Excited Dimer) Lasers
 Dye Lasers
 Semiconductor lasers
Properties of LASER
Lasers show three important properties:-
 Monochromaticity
 Coherence (Properties of Lasers)
 Directionality
Applications of LASER
 Manufacturing
 Medical applications
 Military applications
 Communication
 Data storage
Introduction to semiconductor laser
diodes
 A semiconductor laser diode is formed when
a crystal is doped to produce to produce an
n-type region and a p-type region, one above
the other resulting in a p-n junction or diode.
 A laser diode is powered by injecting electric
current and therefore, they are sometimes
referred to as injection laser diodes.
 Laser diodes find a wide use in
telecommunications. Infrared and red laser
diodes are used in CD players, CDROMs and
in DVD technology.
 Violet lasers are used in HD DVD and blu-ray
technology.
Operation of semiconductor laser
diode
 A typical Laser diode consists of two semiconductors,
one sandwiched above the other.
 Top semiconductor is GaAs- Provides holes. It is a P-
type semiconductor.
 At Bottom we use GaAs and Se(Gallium Arsenide and
Selinium). It acts as N-type semiconductor.
 P-N junction is between both the semiconductor.
 When current is passed through semiconductors then
Electrons and Holes starts moving towards P-N junction.
 Electrons from N-type semiconductor and Holes from P-
type semiconductor combines.
 Since, Holes exists at lower level, hence free Electron
can combine with it only after radiating energy in the
form of Photon.
 The top and bottom of P-N junction is coated by a
mirrored material in order to trap the Photon of light.
 This Photon encourages other Electrons and Holes to
generate Photons which will be in same Phase and the
process will continue until the P-N junction is filled with
Laser light.
 Some of Laser light exits in rear side which will fall on
Photodiode and uses this information to regulate the
voltage to Laser Diode.
 Large amount of diffracted light exits through front of
laser diode and the diffracted light is then made into a
single beam by using Collimating Lens.
Types of semiconductor laser
diodes
 Double hetero-structure laser
 Quantum well laser
 Quantum cascade laser
 Separate confinement hetero-junction laser
 VCSEL(Vertical Cavity Surface Emitting
Lasers)
During our fabrication process of
semiconductor laser diode at SSPL, we have
only used Quantum well lasers.
Applications of semiconductor laser
diodes
 Laser Range Finder(LRF)……..(1)
 Proximity Fuses............................(2)
 Dazzler weapon……………....(3)
(1) (2) (3)
Overview of the fabrication process
 The fabrication process for Quantum well
semiconductor laser is shown here.
 Steps are performed in cleanroom facility
under contamination control because this
laser deals with micro-size features and
minor contaminations can be a critical risk.
 More attention is required in dealing with a
piece of wafer than to the whole wafer.
 Since, whole wafer is expensive
therefore a piece of wafer is suitable
to develop the process.
Steps for the fabrication process
There are several steps involved in the
fabrication process which are
mentioned below.
 EPITAXIAL GROWTH
(GaAs wafer)
Cap
Cladding
Waveguide
Active Region
Waveguide
Cladding
Substrate
 PHOTOLITHOGRAPHY FOR MESA
(spin coating photoresist on wafer)
(MESA patterning by photolithography process)
Photoresist
Photoresist
 MASK ETCHING
(wet MESA Etching of GaAs wafer)
(Removing photoresist after etching process)
Photoresist
Cap
Cap
Substrate
 DIECTRIC(SiO2) DEPOSITION
(oxide layer deposition on E-beam evaporator)
(stripe patterning on oxide by photolithography)
SiO2
Photoresist
SiO2
 METALLIZATION
(Metal deposition on P-side)
(Polishing the bottom side of GaAs Wafer)
P contact
P contact
SiO2
(Metal deposition on N-side)
 For P-side ohmic contact, Chromium(Cr) and Gold(Au) are
deposited by E-beam evaporator.
 The next step is the polishing of the bottom side of GaAs
substrate for N-side contact.
 For N-side ohmic contacts Ge(Germanium), Ni(Nickel) and
Au(Gold) are deposited by E-beam evaporator.
N contact
 CLEAVING PROCESS
 In this step, each laser is cleaved by hand. After
that, the facets of Lasers are coated with
Asymmetric Reflectivities.
 One facet is Partially Reflecting(PR), from which
Laser comes out, whereas the other facet is High
Reflecting(HR) which reflects Laser beam towards
the PR facet.
Coating the facet
 BONDING AND PACKAGING
(Die attach and wire bond on heat sink)
 The last step is the Bonding process between heat-sink
with Indium solder. Indium solder is widely used to
bond Semiconductor Lasers due to its simplicity and it
can bond directly to Copper(Cu).
THANK YOU

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Laser diode fabrication

  • 1. STUDY OF THE FABRICATION OF SEMICONDUCTOR LASER DIODES Done At SOLID STATE PHYSICS LABORATORY(DRDO) PREPARED BY:- Uttam Singh Thakran 09196504912 Electrical and Electronics Engineering
  • 2. TOPICS TO BE COVERED  Introduction to lasers  Principle and theory of lasers  Types of lasers  Properties of lasers  Applications of lasers  Introduction to semiconductor lasers  Operation of semiconductor laser diode  Types of semiconductor lasers  Applications  Overview of fabrication process  Steps for fabrication process  conclusion
  • 3. Introduction to lasers  LASER is an acronym for “Light Amplification by Stimulated Emission of Radiation”, coined in 1957 by the laser pioneer Gordon Gould.  The term “Optical Maser” (MASER= Microwave Amplification by Stimulated Emission of Radiation) was initially used, but later replaced with “laser”.  Laser technology is at the core of the wider area of photonics, essentially because laser light has a number of very special properties.
  • 4. Principle of LASER  The principle of laser is based on the stimulated emission of light.  The components of a typical laser are:- 1. Gain Medium for Population energy 2. Laser Pumping energy 3. Cavity 4.Reflector 5.Laser Beam
  • 5. Theory of LASER  Spontaneous Emission  Stimulated Emission  Population Inversion Spontaneous Emission Stimulated Emission
  • 6. Types of LASER  Gas Lasers  Chemical Lasers  Excimer(Excited Dimer) Lasers  Dye Lasers  Semiconductor lasers
  • 7. Properties of LASER Lasers show three important properties:-  Monochromaticity  Coherence (Properties of Lasers)  Directionality
  • 8. Applications of LASER  Manufacturing  Medical applications  Military applications  Communication  Data storage
  • 9. Introduction to semiconductor laser diodes  A semiconductor laser diode is formed when a crystal is doped to produce to produce an n-type region and a p-type region, one above the other resulting in a p-n junction or diode.  A laser diode is powered by injecting electric current and therefore, they are sometimes referred to as injection laser diodes.  Laser diodes find a wide use in telecommunications. Infrared and red laser diodes are used in CD players, CDROMs and in DVD technology.  Violet lasers are used in HD DVD and blu-ray technology.
  • 10. Operation of semiconductor laser diode  A typical Laser diode consists of two semiconductors, one sandwiched above the other.  Top semiconductor is GaAs- Provides holes. It is a P- type semiconductor.  At Bottom we use GaAs and Se(Gallium Arsenide and Selinium). It acts as N-type semiconductor.  P-N junction is between both the semiconductor.  When current is passed through semiconductors then Electrons and Holes starts moving towards P-N junction.  Electrons from N-type semiconductor and Holes from P- type semiconductor combines.
  • 11.  Since, Holes exists at lower level, hence free Electron can combine with it only after radiating energy in the form of Photon.  The top and bottom of P-N junction is coated by a mirrored material in order to trap the Photon of light.  This Photon encourages other Electrons and Holes to generate Photons which will be in same Phase and the process will continue until the P-N junction is filled with Laser light.  Some of Laser light exits in rear side which will fall on Photodiode and uses this information to regulate the voltage to Laser Diode.  Large amount of diffracted light exits through front of laser diode and the diffracted light is then made into a single beam by using Collimating Lens.
  • 12. Types of semiconductor laser diodes  Double hetero-structure laser  Quantum well laser  Quantum cascade laser  Separate confinement hetero-junction laser  VCSEL(Vertical Cavity Surface Emitting Lasers) During our fabrication process of semiconductor laser diode at SSPL, we have only used Quantum well lasers.
  • 13. Applications of semiconductor laser diodes  Laser Range Finder(LRF)……..(1)  Proximity Fuses............................(2)  Dazzler weapon……………....(3) (1) (2) (3)
  • 14. Overview of the fabrication process  The fabrication process for Quantum well semiconductor laser is shown here.  Steps are performed in cleanroom facility under contamination control because this laser deals with micro-size features and minor contaminations can be a critical risk.  More attention is required in dealing with a piece of wafer than to the whole wafer.  Since, whole wafer is expensive therefore a piece of wafer is suitable to develop the process.
  • 15. Steps for the fabrication process There are several steps involved in the fabrication process which are mentioned below.
  • 16.  EPITAXIAL GROWTH (GaAs wafer) Cap Cladding Waveguide Active Region Waveguide Cladding Substrate
  • 17.  PHOTOLITHOGRAPHY FOR MESA (spin coating photoresist on wafer) (MESA patterning by photolithography process) Photoresist Photoresist
  • 18.  MASK ETCHING (wet MESA Etching of GaAs wafer) (Removing photoresist after etching process) Photoresist Cap Cap Substrate
  • 19.  DIECTRIC(SiO2) DEPOSITION (oxide layer deposition on E-beam evaporator) (stripe patterning on oxide by photolithography) SiO2 Photoresist SiO2
  • 20.  METALLIZATION (Metal deposition on P-side) (Polishing the bottom side of GaAs Wafer) P contact P contact SiO2
  • 21. (Metal deposition on N-side)  For P-side ohmic contact, Chromium(Cr) and Gold(Au) are deposited by E-beam evaporator.  The next step is the polishing of the bottom side of GaAs substrate for N-side contact.  For N-side ohmic contacts Ge(Germanium), Ni(Nickel) and Au(Gold) are deposited by E-beam evaporator. N contact
  • 22.  CLEAVING PROCESS  In this step, each laser is cleaved by hand. After that, the facets of Lasers are coated with Asymmetric Reflectivities.  One facet is Partially Reflecting(PR), from which Laser comes out, whereas the other facet is High Reflecting(HR) which reflects Laser beam towards the PR facet. Coating the facet
  • 23.  BONDING AND PACKAGING (Die attach and wire bond on heat sink)  The last step is the Bonding process between heat-sink with Indium solder. Indium solder is widely used to bond Semiconductor Lasers due to its simplicity and it can bond directly to Copper(Cu).