Din itex 10_09_2012

Multilayer nonlinear dielectric devices for
RF mobile communications

… improvement of performance of smartphones and mobile
computers (save power and extend operating time and
reduce harmful effect on human body)

… cost saving design for automotive radars and
communication systems

… broad spectrum of tunable RF devices to exchange the
traditional non-tunable ones

DINItex, Ladshut-Saint-Petersburg, June 2012

Industry pain and our proposition

Industry pain

Cell phone and mobile computers:
Taking the phone in hand, we create Modern cell phone is a very multifunctional
interference to signal transmission device, it is considered to support several
frequency bands, providing Bluetooth, Wi-Fi,
Antenna is LTE communications. All of those systems
mismatched require bandpass filters or filter banks. It is
with amplifier. Battery
Amplifier faster clear, that the reduction of area occupied by
increases signal discharged filters provides more free space for new
power function.
filters

Antennas actually used in smart mobile devices like cell
phones do not have automatic tuning of its impedance.
Thus, impedance of antenna is being affected by human
body parts like, for instance, hands. Impedance variations
leads to mismatch between antenna and amplifier. Modern
cell phones compensates this effect by providing a
higher power to the amplifier output signal resulting to a
reduction of stand alone time up two times.

Anti-collision radars and communication systems:

up to now commercial solutions on the market are based only on
mechanical scanning of antenna beam or on an array of non-scan
antennas, which are very cost-intensive and not robust solutions.

13.11.12 CONFIDENTIAL 3

Solutions: integrated products based on multilayer nonlinear
dielectric varactor chips

Core technology for different RF
Electronically applications
scanned antenna Adaptive matching
modules for circuits for mobile
automotive radars phones, mobile
and communication computers and
tablets
systems

multilayer nonlinear dielectric-
metal structure (MND)

Advantages of the products: Tunable bulk
ü save power acoustic wave
ü extend operating time (BAW) filters for
ü cost saving system design mobile devices
ü reduce harmful effect on human body


Comparison of technological approaches for varactor chips

Current varactor technologies fall into three major categories: Only Nonlinear dielectric-
based
Ø  semiconductor-based varactor diodes
Ø  Micro-electromechanical system (MEMS) varactors elements
provide the best
Ø  nonlinear dielectric-based varactors
performance and low cost.

Semiconductor Micro- electromechanical Nonlinear dielectric-based
Parameters
varactors (MEMS) elements
Power Handling ~0.01 W ~0.1 W ~1 W
Tuning Speed ~1 ns ~ 1 mks ~1 ns
Bias Voltage ~5V ~50V ~5V
Quality Factor ~100 ~250 ~100
Tunability ~4 ~10 ~3
Life time 5 years < 1 year 5 years

Advantages:
Main drawback: The high power handling
low power handling Main drawbacks:
capability in combination with
capability (high level of high bias voltage and high
the relatively low bias voltage
intermodulation packaging cost
provide the best performance
distortions)
and low cost.


State of the art nonlinear dielectric technology and main
unsolved problems
Ø  For mobile applications it is very important to have a high power
Planar structure handling capability (more than 30dBm) with low control voltage (3V)
simultaneously.

Ø  At present time there are two different approaches to design of
nonlinear dielectric film devices - planar structure and parallel-plate
structure based on only one layer of nonlinear dielectric.
High control voltages and high
power handling capability Ø  Planar structure provides high power handling capability (30dBm) but
needs for that high control voltages (more than 400V). It requires step
Parallel-plate structure up voltage converters that is not acceptable for mobile devices.

Ø  From the other hand, parallel-plate structure is controlled by low
voltages (5-30V) but has low power handling capability (5-10dBm)
which is not enough for the operation of RF amplifier in mobile
device.

Low control voltages and low Ø  The devices based on one dielectric layer are being developed by
power handling capability Agile RF (USA) and nGimat (USA).

Ø  Only multilayer structures allow to combine both important features in
Two-layers parallel-plate structure
one device: to reduce control voltages and to achieve high power
handling capability.

Ø  At present time only one company (Paratek) produces devices based
on two layers of nonlinear dielectric. These devices provide power
Low control voltages and high power handling capability 30dBm (that is acceptable) and the control voltage
handling capability about 20V and that is still high and still takes the DC-DC converters.


The technology validation

Ø  Paratek is developing the most likely technology. It discovered a
different approach to RF tuning using a thin-film material called
ParaScan™ (nonlinear dielectric). Proprietary to Paratek, ParaScan
is used to produce the ParaTune™ family of tunable integrated
circuits (ICs).

Ø  An advantage of Paratek’s products is low-loss tuning over a wide
range of impedances, ultra-fast response time, and industry-standard
packaging which allows new generation of wireless products to
perform better and more efficiently.

Ø  The significant contribution to the development of Paratek’s
technology was made by a group of Professor Kozyrev, who is
one of the founders of DINItex. His group is the author of 15
patents that partly covers IP property in this field and were sold to
Paratek in 2002-2008. During this period of time prof. Kosyrev’s
group provided the material researches and prototyping of Results of Joint research Kozyrev’s Lab
microwave devices for Paratek. and Paratek:

Ø  In March of 2012 Paratek Microwave Inc. was acquired by one ü 2001 R&D 100 Award of 100 best
main producers of smartphones – RIM (owner of trade mark
technical-science works of USA
BlackBerry that takes only 10% of smartphones market). That
means that since that time Paratek is developing RF tuning for RIM
only. ü 15 US Patents

Ø  DINItex is the company which researches are open for the rest ü Over 40 publications in scientific journals
of the market that still contains 90%. and conferences proceedings
Ø  DINItex’s researchers independently developed additional
advantages in technology and designed a range of new devices.
ü 8 grants of US Department of Energy


Knowhow on the structure level

Ø The reduction of control voltages is possible only due to reduction of Me/BSTO/…../Substrate
film thickness. But it leads to drop in power handling capability. For
two layer structure with 3V control voltages the power handling
capability is only 20dBm that is not enough for mobile applications.
Ø To keep 30dBm power handling capability it is possible to increase
the number of layers with parallel reduction of their thicknesses.
Ø The required number of nonlinear dielectric layers is 8-12.
Ø The required thickness of each layer shell be less than 100nm.
Ø The reduction of nonlinear dielectric film thickness is constrained by
low-tuning layer on the metal-dielectric interface due to mismatch of
crystal lattice constants. This problem becomes the most dominant
with increase of layers number.
Ø Up to now this problem for bottom electrode materials with low losses Substrate
at microwaves (with high conductivity, like Pt or Au) is not solved.

Our knowhow in thin film deposition technique provides the solution for described problem

Ø  The principal: changing stoichiometry of dielectric at the initial growth stage allows to reduce the mismatch of crystal
lattice constant.

Ø  The effective changing of stoichiometry by pressure is possible only in unique designed technological vacuum
chamber (that is completely unique and patented by founders).

Ø  For modeling of spattering and deposition processes the unique math model and computer simulation tool are
elaborated and licensed by founders.


Knowhow on chip design level

Ø  At the chip level the other main problem exists: excitation of acoustic waves leads to dramatical increase
of microwave losses (reduction of Q-factor).

Ø  The two layer structure allows the cancellation of transverse acoustic modes (founders are the co-authors
of patent application, owned to Paratek). However, the excitation of longitudinal acoustic waves is still a
problem at present time.

Ø  Besides, the high level of operation microwave power takes an effective heat sink.

Our knowhow on chip level design
~ 1 mm C, pF
provides the solution for The image cannot be displayed. Your computer may not have enough memory to open the
image, or the image may have been corrupted. Restart your computer, and then open the ﬁle
again. If the red x still appears, you may have to delete the image and then insert it again. Capacitance
mentioned problems: variation under
DC in microwave
signal
Special shape of top electrodes
RF in RF out
~ 1 mm

provides both cancellation of
Capacitance
longitudinal acoustic wave variation under
DC control
generation and more efficient heat voltage

dissipation [PCT application is
preparing] U, V


Knowhow on tunable BAW filter design

Ø At present time BAW filters based on traditional RF piezoelectric
materials (AlN, ZnO) are in active development and use. BAW
filters can operate up to around 10GHz and provide the
combination of high quality RF parameters (insertion loss,
reliability, sizes).
Piezoelectric Ø BAW filters made of the above materials can be electronically
tuned to a specified frequency by using a varactor diode or by
utilizing the second-order nonlinearity of the piezomaterial.
Ø However the frequency tuning in such a structures is not more
than 3%.

Our knowhow of tunable BAW filter design provides the solution of
mentioned problem
Edc
Ø Proposed BAW filter consists of several layers of nonlinear dielectric. The
Edc
sign of piezoelectric coefficient of each layer depends on direction of
control E-field. Edc
Ø The principal: biasing of each nonlinear dielectric layer with EDC of the
same or opposite direction results in the excitation of the antisymmetrical Edc
or symmetrical acoustic modes respectively.
Ø Frequency tuning up to 100% is possible. The principal of acoustic mode
switching is completely unique and patented by founders.
Ø For modeling of acoustic wave excitation the unique math model and
computer simulation tool are elaborated and licensed by founders.


New complex approach into technology of distributed nonlinear
dielectric structures for phased array antennas
Ø  More than 20 years of experience in design of
Absence of phased array antennas for frequency ranges up to 60
residual GHz.
polarization due
to oxygen Ø  2001 R&D 100 Award for technology of Electronically
annealing and Scanning Antenna, which have been included in the
special regimes list of 100 best technical-science works of USA in
of electrodes 2001 year.
deposition

Distributed Improvement of
High structural quality nonlinear dielectric tanδ due to
of nonlinear dielectric cancellation of
films due to the structures for
transversal and
unique math model automotive radar longitudinal
and software of (77GHz) and acoustic wave
spattering and communication generation [PCT
deposition processes (10GHz) phased application is
[PCT application is array antennas preparing]
preparing]

Theoretical and
experimental Licensed technique
investigations of and test-fixtures for
pure strontium RF characterization
titanate films with of nonlinear
relatively low loss dielectric structures
in W-band


IP list

7 released patents; 4 patent applications

Chip design and Design
Chip technology Product design
testing simulation

1. Russian patent 3. Russian Patent N2397607, 7. Russian Patent 10. Patent application to be
N2434078. 20.11.2011 17.07.2009 N2361360, 12.05.2008 applied (PCT)
“Method of complex oxide “Ferroelectric acoustic “Tunable pulse former made “SW simulation Kit for
ferroelectric thin film resonator and its resonance on non-linear ferroelectric simulation of process
deposition based ion- frequency tuning technique” transmission lines” parameters at ion etching
plasma sputtering and ion plasma sputtering”
technique” 4. Russian Patent N2367964, 8. Russian Patent
04.04.2008 N2355080, 24.05.2007
“Coaxial resonator for “Microwave active module” 11. Russian Patent
2. Patent application to
be applied (PCT) Capacitor Quality factor N2012610179
measurements” 9. Russian Patent “SW design kit for resonance
“Method of increasing the N2350008, 04.05.2007
tunability of ultrathin electro-acoustical
5. Patent application to be “Method of thermal to phenomena modelling in
ferroelectric films” electrical energy conversion
applied (PCT) multilayer structures”
“Tunable bulk acoustic wave and a device for it”
filter based on nonlinear
dielectric films”

6. Patent application to be
applied (PCT)
“Tunable capacitor based on
multilayer nonlinear dielectric”


Patent application plan

1st year 2nd year

1. PCT application 6. PCT application
“Control loop design for the RF tunable matching “Tunable RF filter based on integrated LTCC and
circuit” multilayer nonlinear dielectric technology”
2. PCT application 7. PCT application
“Phased array antenna for the automotive radar” “Tunable RF coupler based on integrated LTCC
and multilayer nonlinear dielectric technology”
3. PCT application
“BAW duplexer based on the multilayer nonlinear 8. PCT application
dielectric structure” “Tunable RF generator based on integrated LTCC
4. PCT application
“BAW impedance tuner” 9. PCT application
“Tunable power divider based on integrated LTCC
5. PCT application and multilayer nonlinear dielectric technology”
“Method of LTCC and multilayer nonlinear
dielectric technology integration” 10. PCT application
“Power amplifier tuner based on integrated LTCC


Broad spectrum of products based on multilayer nonlinear
dielectric varactor chips

Core product
Multilayer nonlinear
dielectric-metal structure
(MND)

Integrated products

Electronically scanned
Adaptive matching circuits Tunable bulk acoustic wave
antenna modules for
for mobile phones, mobile (BAW) filters for mobile
automotive radars computers and tablets devices
and communication systems

New class of voltage tunable RF components
§  Tunable filters §  Tunable power dividers
§  Tunable couplers §  Phase shifters
§  Tunable generators §  Power amplifier tuners


Market call for adaptive matching circuit (product 1)

Ø  The output power and radiation efficiency of a mobile phone with
a compact narrow-band antenna can be greatly degraded by large
mismatches resulting from the user's hand position.

Ø  Since multi-mode, multiband phones with densely packed radios
and future MIMO antennas will only make next generation designs
even more problematic, antennas need to be less sensitive to
their environment.

Ø  Adaptive antenna tuners dynamically change antenna impedance
using a feedback controller so it is always tuned for maximum
efficiency. In these modules, a detector measures the transmitted
RF signal and an algorithm derives the mismatch information from
the phase of the matched input impedance and calculates any
necessary changes for the adaptive matching circuit.

Ø  Disruption is all well and good when a company is creating a new
smartphone category, but Apple had a problem on its hands when
its iPhone's antenna reception experienced disruption in the
hands of its customers.

“Divine Innovation: 10 Technologies Changing
the Future of Passive and Control Components”
Nov, 2011


LG request for development of adaptive matching circuit (market
call confirmation)


Adaptive matching circuit. Operational principle

Adaptive Matching Circuit

Unknown load
Matched Impedance transformer (antenna)

Impedance
sensor
From Amplifier

Controller
Mismatch

Output
Ø  Tuning elements are basic building blocks for
Input
adaptive impedance matching circuits

Ø  Electronically controllable varactors are most
practical and convenient tuning elements for
providing tunability in RF/microwave circuits U control
Varactor Impedance transformer


Adaptive matching circuit design for entrance to the market

3-D schematic of adaptive matching module Chip
selfcos,
Euro
cents
6,6

BOM

2,8

Proposed varactor chips (based on multilayer nonlinear
processing
materials:
coa0ng
lack,
developing
chemicals,
stripping
and

dielectric structure) cleaning
materials

1,3

substrate
sapphire,
4
inches
1,3

dielectric
targets
(Ba,Sr)TiO3
0,01

Pt
target
(contact
layer)
0,04

Gold
for
upper
contact
0,1

Oxigen
for
deposi0on
process
0,01

Argon
for
deposi0on
process
0,03

Labor
cost
3,1

Equipment
deprecia@on
cost
0,7

Module
for
MC
selfcost,
Euro
cents
111

BOM
94,4

chips
(4
pcs)
26,4

diode
MW
8,0

coil
for
MW
4,0

microcontroller
50,0

Multilayer substrate with integrated passive capacitors
for
uC

2,0

elements resistors
4,0

Labor
cost
16

Equipment
deprecia@on
cost
1,1


Electronically scanned antenna modules (product 2)

Two different type of products based on the same technology

Automotive radar (24GHz/77GHz), used for
emergency brake assist, collision warning, adaptive
cruise control, blind spot detection

Satellite broadcasting systems (10.95 - 13.5 GHz)


Anti-collision radars

Existing radars We suggest radar of the future -
electronically scan and multi beam

LETI prototype

77 GHz and 24 GHz Sensors
Applications:
§  Adaptive Cruise Control
§  Emergency Brake Assist Main advantages:
§  High speed and wide angle of scan
§  Reliability due to the lack of mechanical moving parts
At present time there are only the non-scan or the §  Combining short range and long range radars in one
Camera Sensors package – reduce size and number of units in the
mechanical scanning systems on the commercial
market which are very cost-intensive and not system
§  Integrated technology of aperture and control circuit
robust solution.
§  Low cost


Scanned antenna for communication systems

State of the art - mechanically scanned LETI prototype of Ka-band phased array
antennas antenna

Consist of 16 coplanar waveguide ND phase
shifters

30GHz thin film ND phase shifter


Tunable BAW filters in mobile devices (product 3)

Traditional mobile phone Proposed mobile Voltage controlled switching and
front-end phone front-end tuning of frequency band (Novel
Four filters feature, no analogues)
Tunable
BAW filter

Antenna Antenna
Switch Switch
Module
Module 4 in 1 - cost saving
system design

BAW filters application
Wi-Fi,
BT
Advantages of BAW technology:

GPS Wi-Fi
ü High power handling capability
ü High quality factor GSM,
ü Miniaturization WCDMA

1 2 3 4 5 6 Freq. GHz


BAW - operational principle

Well-known tunable capacitive structures on the base of nonlinear dielectric

E = EDC + EMW
Induced piezoelectic
Ме behavior is a negative
ND phenomena for MW
tunable devices
Substrate

Suppression of
piezoresonances
due to use of two-
layer ND film
structure

[J. Oakes, A. Kozyrev, A. Prudan et al. Patent Application US2008/0232023]


Knowhow in tunable acoustic devices based on multilayer
nonlinear dielectric structure

Two-layers structure
Me

Me ND Edc
UMW
Me ND Edc

[A. Kozyrev, A. Prudan et al.
Patent RU №2397607]

switching

Application to each layer of EDC of the same or
opposite direction results in the excitation of the
antisymmetrical or symmetrical modes respectively.


Validation (present time results)

Phase Array Antennas

Ø  The principal product based on one layer structure designed and manufactured by our team is Phase Array
Antennas.

Ø  Based on our phase array antennas new product like radars with electronically scanning on frequencies up
to 80 GHz can be designed. The use of phase array antennas will completely eliminate the use of
expensive mechanical systems in the production of automotive radar

Ø  It can be also used in communication systems for transferring signals in wide range of frequencies on long
distance, for example transferring video and audio signals. It can be used also for transferring signal on
moving objects.


Transferring video signal on the distance 50 km


The progress of our team in Phase Array Antenna design

Ø  More than 20 years of experience in design of phased array
antennas for frequency ranges up to 80 GHz.

Ø  2001 R&D 100 Award for technology of Electronically
Scanning Antenna, which have been included in the list of 100
best technical-science works of USA in 2001 year.

Ø  A set of prototypes and engineering samples is developed


Structure and device parameters.

The key knowhow in device manufacturing is knowhow on the level of chip and structure growth. It is so due to
the fact that set of structure parameters fully determine the end device parameters. And the quality of the
device is fully determined by quality of film deposition process and chip topology. Below in the table a
correlation between device and structural parameters is presented

Structure parameters Device parameters
Stoichiometry (variation of film composition during the growth process). In the case
of fixed film stoichiometry the tunability drops under temperature variations in Ø  Tunability
operating temperature range. In order to get rid of this effect it is necessary to
change the stoichiometry of the film as it grows. From the other hand the Ø  Quality factor
stoichiometry variation allows dramatically reduce the number of defects on the (losses)
interface electrode/nonlinear dielectric due to reduction of the mismatch of crystal
lattice constant that in turn results in quality improvement. Ø  Tuning Speed
Stoichiometry variation of film composition during the growth process is one
of our main knowhow.
Number of nonlinear dielectric layers. Only multilayer structures allow to combine
Power handling
both important features in one device: to reduce control voltages and to achieve
capability
high power handling capability.
The thickness of a layer. The reducing of layers thickness provides the reducing
Bias Voltage
of control voltages
Chip topology. The unique chip topology leads to losses reduction and increasing
Quality factor (losses)
of quality factor (Q). The unique chip topology is our main knowhow also.


Validation of temperature stability

Stoichiometry of the structure largely determines the dependence of
capacitance on temperature. Dependence of capacitance on
temperature is a negative effect because it reduces tunability.

At present time we have obtained two layers structure with gradient
stoichiometry that demonstrates high temperature stability of
capacitance and due to that higher tunability.

Temperature dependence of capacitance
0,5
Experimental two layers structure obtained by
One layer our team
0,4
Two layer

0,3 The effective changing of stoichiometry by pressure is
C, pF

E=0 V/mkm
possible only in unique designed technological vacuum
0,2 chamber (that is completely unique and patented by
founders).
0,1
E=40 V/mkm For modeling of spattering and deposition processes
the unique math model and computer simulation tool
0
are elaborated and licensed by founders.
240 260 280 300 320 340 360 380 400
T, K


Validation of power handling capability

For correct device operation it is necessary that device capacitance varies under bias voltage only and doesn’t
depend on microwave power.

To experimental validation of device linearity, semiconductor and ferroelectric capacitive elements have been
placed in resonance chamber. The peak on the curve of frequency dependence of transmission coefficient
(S21) depends on capacitance value. If the capacitance value doesn’t depend on microwave power the peak on
the curve remain sharp (curve 1). If the capacitance value changes under microwave power the resonance
peak shifts to the higher frequency area (curve 2).

At present time we can demonstrate very good power handling capability value
(independence of capacitance on microwave power) for one layer structure (curve 1).
Resonance curves for different ferroelectric (one
layer) elements
S21, dB

-15 The next step of the project – to obtain the
1
-20 multilayer structure that posses good
2
-25 power handling capability value that is a
-30 result of multiplexing of obtained result for
-35 one-layer structure.
-40

-45

2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 f, GHz


Validation of tuning speed

Tuning speed is one of the main parameters that define the behavior of the device such as response sensitivity.
The tuning speed depends on quality of the interface electrode/nonlinear dielectric. The less number of defects
the more fast response. The number of defects in turns could be dramatically reduce by stoichiometry
variation. The quality of interface electrode/nonlinear dielectric can be validated by tuning speed.

At the present time we obtain laboratory prototype of phase shifter that demonstrate perfect phase response
(tuning speed) that is less than 5 nanosec.

Control pulse and phase response of the ferroelectric phase shifter

5 ns 0.5 mks
µ
control pulse

phase response


Validation of tunability and quality factor

Tunability and quality factor are the main parameters that define the behavior of the device such dynamical
operating range and insertion losses. The higher tunability the wider operating range. The less bias voltage the
better and bias voltage in its turn depends on dielectric film thickness. The thinner film the less bias voltage.

At the present time we obtain laboratory prototype of one layer capacitive elements that demonstrate perfect
quality factor and good tunability. The next step of the project – to obtain the multilayer structure that posses
the same tunabilty but at the lower bias voltage and the same quality factor values that are a result of
multiplexing of obtained results for one-layer structure.

The dependence of capacitance on bias voltage The dependence of quality factor on bias voltage
1,2 150
Quality
1 factor at
125
0,8 1,5 GHz
One layer
(experimental)
C/C(0)

0,6 100
One layer
0,4
(experimental)
Multilayer 75
0,2 (expected)

0 50
-15 -10 -5 0 5 10 15 0 5 10 15 20
U, V U, V

Test fixture for tunability, quality factor and power handling
capability validation

Our team have created measuring devices, which allow
measuring main parameters of nonlinear structures with
previously unattainable precision. The test devices are
patented. The measurement technique is licensed.

This accuracy allows to distinguish the subtle changing of
multilayer structure parameters that is necessary for growth
control. The measurement accuracy of quality factor is
demonstrated on the figure below.

Comparison of measurement accuracy

Q
f = 3 GHz Measurement
Accuracy of Agilent
E4991A Analyzer at
3 GHz

Measurement
Accuracy of Q-test
fixture proposed
at 3 GHz

U, V


Test fixture for switching time characterization

Our team have created device for switching time
characterization. The IP rights on this device are The test fixture features:
protected.
Ø  measurements of switching time from
This device was implemented in two companies – minutes down to 1ns under pulses with
Gennum and Paratek. amplitude up to 5kV is available;

Ø  small error of measurements of
dynamical (pulse) C-V characteristics.
Registration of C-variation with 0.1%
scale;

Ø  measurements of switching time of
ferroelectric bulk and film capacitors;

Ø  measurements of dynamical (pulse) CV
characteristics
Place of the
varactor Ø  observation of hysteresis loops from dc
installation under up to 500MHz frequencies
pressing
Ø  measurements of dynamical polarization
MW process in ferroelectrics and linear
ports
dielectrics
Pulse or
DC ports


Project goals and estimated results

Project resume

Objectives: DINItex develops and plans to produce revolutionary tunable multi-layer non-linear dielectric chips
and modules based on them for the wide range of RF applications including smart phones, mobile computers,
automotive active safety systems
Products:
Ø  2013 - Antenna modules for mobile devices
Ø  2014 - High effective and low-cost automotive anti-collision radars and communication systems
Ø  2015 - Novel generation of tunable acoustic devices, which shall exchange actual filter banks in smart mobile
applications by a single chip
Ø  2015+ - New class of voltage tunable RF components
•  Tunable filters
•  Tunable couplers
•  Tunable generators
•  Tunable power dividers
•  Phase shifters
•  Power amplifier tuners
Market:
Ø  1 B of mobile phones yearly
Ø  0,5 B mobile computers and tablets yearly,
Ø  50 M of autos yearly
Business strategy:
Ø  To become a global supplier of building blocks for the world's leading mobile phones, computers with a strong IP
portfolio
Ø  To enter the market by proving the unique position of the technology through intensive JDPs with the major players
like Nokia, Apple, etc and major suppliers of automotive radar and antennas electronics
Ø  To provide multiple return to Series A investor(s) by “trade sale” after the product is accepted by the market
Ø  To provide multiple return to Series B investor(s) by setting up high volume manufacturing company with a significant
and stream of revenue and wide customer range, production can be ramped up through partnership and OEM
Exits opportunities:
2014+ : deal with Rusnano or other strategic investor
2014+ : trade sale to blue chips in Mobile phones, computer industries and leaders of automotive electronics
2016+ : IPO


Value chain

Functional
Chip SMD Module
layers End device
processing assembling packaging
deposition

Ø  Mobile phones
and smartphones

Surface Mounting of Antenna module Ø  Notebooks,
Functional layers Multilayer structure assembling and
chips and rest of netbooks, tablets
growth processing packaging
components

Ø  Automotive anti-
Vertical integration allows collision radars
Ø  significantly reduce costs at every level of production and
Ø  maximize the efficiency of production of the final product communication
Ø  maximum control over product quality systems
Ø  achieve rapid and cyclical introduction of innovative solutions, infrastructure optimization,
harmonization of business processes, technologies and competences Ø  Multimedia
Ø  most effectively develop and adapt consumer electronic modules devices
The results:
Ø  reducing costs and selling price Ø  Microwave and
Ø  independence from suppliers of intermediate goods RF high power
devices


Smartphones global market (adaptive matching circuit and BAW
applications)

Smartphone global market, M pcs. Ø  The worldwide smartphone market grew 42.6% year over year
in the third quarter of 2011 (3Q11), despite a slowdown within
1 710
key mature markets. According to the International Data
1 439 Corporation (IDC) vendors shipped 118.1 million units in 3Q11
compared to 82.8 million units in the 3Q10.
1 189
Ø  The smartphones share at mobile phone market shall grow up
975 to 50% in 2017.
798 Ø  IDC expects smartphones sales rise to 975 million in 2015
654
Ø  IMS Research expects 800 million smartphone to sell or 35% of
503
the mobile handset market. They predict this figure will rise
to over 1 billion in
Ø  Morgan Stanley Research estimates sales of smartphones will
exceed those of PCs in
2012 2013 2014 2015 2016 2017 2018
Top Five Mobile Phone Vendors
Source: Gartner, Inc.
Market shares
Ø  Samsung became the new leader in the worldwide
smartphone market
Ø  Apple, after taking the number one spot last quarter from
Samsung Nokia, slipped to the number two spot worldwide
20%
Apple Ø  Nokia maintained its third place position on the strength of
30,60%
its Symbian phones.
Nokia
Ø  HTC moved up one spot and maintained its upward
14,50% HTC momentum during 3Q11.
RIM Ø  RIM (Research In Motion) began shipping its new BB OS 7
10% smartphones to the market during 3Q11, including updated
14,20% Others
10,80% versions of the BlackBerry Bold, BlackBerry Curve, and the
BlackBerry Torch.
Source: International Data Corporation (IDC)


PC global market (adaptive matching circuit and BAW
applications)

PC market, M pcs Ø  The latest mobile PC forecast from DisplaySearch’s highlights
the impact of changing regional dynamics and the impact on
1 200 the notebook and tablet PC businesses.
Tablet PC
1 000
Notebooks Ø  Strong growth in shipments of notebook PCs into emerging
800 markets will result in these markets passing mature markets in
467 2011.
420
600
360
290 Ø  At the same time, shipments of tablet PCs into mature markets
400 226
170 continue to lead emerging markets and are expected to
125 498
200 90 450 throughout the forecast period.
270 300 350
190 220 250
0 Ø  As a result, mobile PC shipments (including notebook, mini-
2011 2012 2013 2014 2015 2016 2017 2018
note and tablet PCs) are expected to grow at double-digit rates
Source: Quarterly Mobile PC Shipment and Forecast Report, NPD Display Search through 2017, at which time shipments will reach nearly 800
PC market shares million units, up from 277 million in 2011 and tablet PC will get
about 45% of sales.

Ø  The tablet PC category expanded its role in the mobile PC
Apple market. The Y/Y shipment growth rate for tablets in 2011
21,10% HP
reached 256%.
33,90%
Dell Ø  The main assumptions behind the latest forecast are that as
15% Acer Group PC penetration rates rise in emerging markets, first time buyers
are going to look to notebooks for the performance. At the
Lenovo
same time, the convenience of tablet PCs with their instant-on,
11,60%
10,90% other long battery life and portable form factors will be a welcome
7,50%
platform for existing PC owners.
Source: Quarterly Mobile PC Shipment and Forecast Report, NPD Display Search


Automotive market (Electronically scanned antenna modules for
automotive radars and communication systems)

Automotive market, M pcs. Ø  We are focusing on the vehicles equipped with active
114 safety features like short-, mid- and long range radars
105
96
88 Ø  Actually the only high-end automobiles are being equipped
81 with active safety features, but the tendency shows rapid
74
67 introduction of the features into low-end cars and is driven
60 by the car safety regulations in EU, US and Japan

Ø  Thus analytics expect significant growth of the radar
segment of automotive market.

Ø  It is predicted that the size of that segment shall be about
50 million pcs in 2018
2011 2012 2013 2014 2015 2016 2017 2018
Source: Plunkett Research, Ltd.

Automotive market shares General Autoradar market, M pcs.
Motors
14%
49

40

Others 32
34% Toyota
25
12%
19
Ford
9% Honda 12
6% 7
Nissan Chrysler
7% 3%
Volkswagen Daimler 2012 2013 2014 2015 2016 2017 2018
12% 3% Source: Plunkett Research, Ltd.
Source: Plunkett Research, Ltd.


Business targets and strategy

Strategy:

Ø  To become a global supplier of building blocks for the world's leading mobile phones and computers with a strong IP portfolio;
Ø  To enter the market by proving the unique position of the technology through intensive JDPs with the major players like Nokia,
Apple, etc and major suppliers of automotive radar and antennas electronics;
Ø  To provide multiple return to Series A investor(s) by “trade sale” after the product is accepted by the market;
Ø  To provide multiple return to Series B investor(s) by setting up high volume manufacturing company with a significant and
stream of revenue and wide customer range, production can be ramped up through partnership and OEM

Stage I: Prototyping and technology Stage II: Mass production 2014-2018 (and further)
commercialization 2012-2013
Ø  To conquer at least 10% market share of HF tunable
Ø  To continue technology development device
Ø  To protect IP by filing of 10-15 patent applications Ø  Become cash positive in 2015
Ø  To create prototypes of three main products Ø  To reach 500M yearly turnover
Ø  To sign a contract with one of the leading manufacture Ø  To provide 45% gross margin
of mobile phones or mobile computers. Ø  To provide 30% EBITDA
Ø  To provide IRR 50%

2012-2013 2014 2015 2018

Financing – VCF + Grants Financing – Strategic Investor + Grants

Investments needed – 5M Euro Investments needed – 74 M Euro

The company value in 2013 is 40M Euro The company value in 2018 is 1,5B Euro


Exit strategy options

*  Various promising exit options even at early stage

2012
2012-2013
Funding
2013
Equipment set-up
Proof of concept/ Market introduction
Implement process IPO
Alliances with leaders Trade sale
Process fine tuning on the mobile and
to blue chip in
automotive devices
market Mobile phones
and computer
Pilot line industries or
automotive leader

Volume
Optional: Ramp-up
Deal with
RUSNANO or other
Strategic Investor
Volume
Ramp-up

Prototyping and technology commercialization Mass production


Project plan and mile stones

2012 2013 2014 2015 2016 2017 2018
I II III IV I II III IV I II III IV I II III IV I II III IV I II III IV I II III IV

Ramp up of
R&D
activity

Equipment is installed
Ramp up is completed

Technological Chips mass production in Landshut on rented Mass production at own
parameters optimization facilities plant

IP protection
SOP at own plant

Set up of supply chain

Prototype of products Mass production at own
Modules mass production in Russia facilities
plant

Customer
presentatio
n of
products
IPO
Building up own factory for
Agreement with potential customer all production steps
about long term cooperation

Prototyping and Mass production
commercialization

Technology commercialization and Pilot line in Landshut
2012-2014
Machinery and equipment are provided on a leasing basis, thus saving costs and
reducing entrepreneurial risk:

Ø  customized physical laboratories & clean rooms
Ø  reactors
Ø  lithography equipment
Ø  chip processing equipment
Ø  analytical and test equipment

Functional
Chip Module
layers
processing design
deposition

Developing of Developing of chip Module design and
epitaxial technology processing technology prototype assembling

§  The whole value chain technology developing

§  Integration with the main worldwide known manufactures of end products

Ø  Mobile phones
Ø  Mobile computers
Ø  Automotive applications

•  IP protection and holder of IP rights


Mass Production

2014-2016
Germany (Landshut) Germany + Russia (St. Petersburg)

Functional SMD Module
Chip
layers assembling packaging
processing
deposition
Ø  The production line shall be located in the rented foundry Ø  Till the ramping up of own factory in 2017 the assembling
at Landshut till 2016 lines shall be located in the rented facilities in Russia
§  due to the lack of clean room facilities and
infrastructure for them in Russia Ø  Final product shall be produced in Russia with the chips
§  to optimize cost and supply chain of the chip supplied out of front-end facility in Landshut
production
Ø  Pilot line shall continue working rented facilities Ø  Head quarter of the Company shall be located in Russia
Ø  Sales/purchasing office is partly located in Landshut to
provide optimal interface to potential customers/ suppliers. Ø  R&D department is located in the head quarter.
Ø  Total number of reactors is 11
Ø  Total number of lithography lines is 4 Ø  R&D activities with focus on new product development
based on the similar chip technology

Since 2017 …
Functional layers Module
Chip processing SMD assembling
deposition packaging

By 2016 the own factory for whole production chain shall be completed in Russia
Since 2017 all products are made in Russia


Team

§  One of the world strongest team in microwave device development originates from St.-Petersburg Electrotechnical
University, Russia, with the unique synergy of material science specialists and radio engineering experts combined
since years in one research group.
§  The team members own more than 30 issued patent and more than 200 publications in the field;
§  Team core (10 people) is a perfect combination of young talents, experienced mid-age experts and gurus. Average age
is about 35 years old;
§  More than 50% of team staff have a PhD grade

Prof. Dr. Andrey B. Kozyrev,
Dr. Denis Bychkovsky
co-founder, Electronic engineer (1968), Ph.D
co-founder, graduated from Ioffer Institute of
(1974), Full professor (1990) of the
Russian Academy of Science, author of row
Department of Electronics and the head of the
scientific publications and patents in the field
Microwave Laboratory. Last 25 years his
of solid state physics, highly experienced in
general research interests have been in field
project management, proven successful
of microwave electronics. He has more than
records of several start-up’s
200 publications in scientific journals and
more than 30 patents in Russia and abroad.

Dr. Anatoly K. Mikhaylov,
Vitaly N. Osadchy, Lead of direction
Lead of direction “BAW”.
“matching circuits & radars”.
co-founder, Electronic engineer in 2005 and
co-founder, Electronic engineer (1994). Main
PhD in 2010. He has 18 publications and 7
focus: constructing and experimental testing
Russian patents. He won the first prize for the
of controlling devises and phased array
best young scientist’s paper at the 6th
antennas for microwave applications. He has
International conference MMA-2010 (Warsaw,
over 60 publications in scientific journals and
Poland, 2010). Winner of «President’s of
8 patents. 2001 R&D 100 Award for
Russia grant for young doctors of philosophy».
technology of Electronically Scanning
Antenna.


Background and current status of work

Ø  Ion-plasma deposition technology for thin film Me/
FE/Me structures with suitable MW parameters is
elaborated;
Ø  Main associated technological operations (buffer
layer deposition, lithography, etching etc.) are
elaborated;
Ø  The set of new technological approaches is
developed;
Ø  Special MW test-fixtures to provide the control of
MW elements during and after their producing are
elaborated, certificated and are in practical use in
Russia and abroad;
Ø  The theoretical analysis of parameters of new
devices on the base of multilayer structures is done;
Ø  The set of prototypes of MW devices, which are the
base to develop the generation of new class of
devices is elaborated.

The high qualification level of Lab’s stuff is confirmed by the following data:

Ø  2001 R&D 100 Award for technology of Electronically Scanning Antenna, which have been included in the list of 100 best
technical-science works of USA in 2001 year (together with colleagues from NREL (USA) and Paratek Microwave Inc.
(USA)).
Ø  In accordance with data of MEMS Investor Journal (May 2008) the laboratory “is one of the four laboratories taking leading
position in the World in area of tunable microwave ferroelectric devices”.
Ø  Eight USA governments (DOE) grants and more than 30 foreign contracts, among them National Renewable Energy Lab
(USA), Gennum (Canada), Paratek Microwave Inc (USA)
Ø  Microwave Year Prize at 27th European Microwave Conference (Jerusalem, 1997), first prize of MMA-2010 (Microwave
Materials and Application) for the best work of young scientist (Warsaw, 2010).


Partners

London Imperial College is consistently rated amongst the world's best universities and it is a
science-based institution with a reputation for excellence in teaching and research. It has a very
strong basement for nonlinear dielectric research.

Micronova is Finland's National Research Infrastructure for micro- and nanotechnology, jointly
run by VTT Technical Research Centre of Finland and Aalto University. Micronova's expertise
covers the entire micro-nano innovation chain, from basic device physics and materials research to
the development of new fabrication techniques and device prototypes, and even small scale
manufacturing.

Forschungszentrum Jülich GmbH (Jülich Research Centre) is a member of the Helmholtz
Association of German Research Centers and one of the largest research center in Europe.
Research at Jülich is divided into four research areas: health, information, environment, and
energy. The key competencies of physics and scientific computing provide the basis for world-
class research in these areas

Fraunhofer-Gesellschaft, the largest organization for applied research in Europe. More than 80
research units, including 60 Fraunhofer Institutes, at different locations in Germany. The majority of
more than 20,000 staff are qualified scientists and engineers. €1.8 billion annual research budget
totaling.

Saint Petersburg Electrotechnical University "LETI" (ETU) is considered as one of the world
largest education and research centers in Radio Engineering, Electrical Engineering, Electronics
and Computer Science.


List of potential Referents

Professor York's research involves applying new materials advances to RF and power electronics. His
group is developing high-power/high-efficiency electronics using wide band-gap (GaN) semiconductor
University of
technology, building on extensive expertise at UCSB in this area. He is co-director of the ONR MURI
Professor California at rayork@ece.ucsb.
Center MINE (Millimeter-wave Initiative for Nitride Electronics). He is also a pioneer in applying thin-
Bob York Santa Barbara,
film ferroelectric technology for use in frequency-agile RF/wireless systems. He was awarded an IEEE edu
CA, USA
MTT-S Outstanding Young Engineer Award in 2004, and received an Office of Naval Research Young
Investigator Award in 1996. (Publications: 211; Citations: 2714; G-Index: 44; H-Index: 27)

Head of Department of Materials
He is a member of the Electrical Engineering RAE panel, sits on the Advisory Board of Cambridge
Massachusetts Institute, the Advisory Board, Antenova Ltd, a member of the DTI Working Group for
Professor
Imperial College the Quantum Metrology Programme at NPL and he is a consultant on technical programmes for the n.alford@imperia
Neil McN.
Alford
London Gatsby Charitable Foundation. He is a fellow of the Institute of Physics, the Institute of Materials, l.ac.uk
Minerals and Mining and a fellow of the Institution of Engineering and Technology. He is an associate
editor for the Journal of the American Ceramic Society. He has over 200 journal publications and is
the author of 21 patents. (G-Index: 23; H-Index: 12)

Microwave and
Since 1998, he has been a Professor with Chalmers University of Technology. Since 1996, he has
High Speed
also worked part time with Ericsson Microwave Systems AB (currently Ericsson AB), Mölndal,
Electronics
Sweden. He has authored or coauthored over 300 papers and conference presentations. He holds
Professor Research
over 30 patents/patent applications. His research interests are physics, design, and experimental spartak.gevorgian
Spartak Center, Ericsson
Gevorgian AB;
investigation of microwave devices and components based on ferroelectrics, silicon RF integrated @chalmers.se
circuits (RFICs) and monolithic microwave integrated circuits (MMICs), microwave photonic devices
Chalmers
(optically controlled components), and modeling of passive coplanar components based on conformal
University of
mapping. (G-Index: 21; H-Index: 12)
Technology

Ecole Tagantsev is a theoretician of a broad domain of expertise from ferroelectricity and phonon physics to
Polytechnique electrodynamics of superconductors. He is the author of key results on the theory of microwave
Professor
Fédérale de materials, dielectric polarization in crystalline materials, and relaxor ferroelectricity. He is also known alexander.tagants
Alexander
Tagantsev
Lausanne in the field ferroelectric thin films for elucidating works on the polarization switching and degradation in ev@epfl.ch
(EPFL), these systems. He authored or co-authored more than 200 articles (cited some 6000 times) and a
Switzerland comprehensive book on ferroic domains. (G-Index: 17; H-Index: 9)


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