Enviar búsqueda
Cargar
Temperature dependent electrical response of orange dye complex based
•
1 recomendación
•
226 vistas
IAEME Publication
Seguir
Denunciar
Compartir
Denunciar
Compartir
1 de 11
Descargar ahora
Descargar para leer sin conexión
Recomendados
THE EFFECT OF INTERFACE MODIFICATION BY PEDOT: PSS ON THE HOLE MOBILITY OF TH...
THE EFFECT OF INTERFACE MODIFICATION BY PEDOT: PSS ON THE HOLE MOBILITY OF TH...
ijoejournal
Ijetcas14 643
Ijetcas14 643
Iasir Journals
Comprehensive identification of sensitive and stable ISFET sensing layer high...
Comprehensive identification of sensitive and stable ISFET sensing layer high...
IJECEIAES
P01052131135
P01052131135
IOSR Journals
Performance analysis of high-k materials as stern layer in ion-sensitive fiel...
Performance analysis of high-k materials as stern layer in ion-sensitive fiel...
TELKOMNIKA JOURNAL
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
ijcsa
1-s2.0-S1369800114001711-main
1-s2.0-S1369800114001711-main
Mahdi Robat Sarpoushi
Eng4
Eng4
Sulieman Bahar
Recomendados
THE EFFECT OF INTERFACE MODIFICATION BY PEDOT: PSS ON THE HOLE MOBILITY OF TH...
THE EFFECT OF INTERFACE MODIFICATION BY PEDOT: PSS ON THE HOLE MOBILITY OF TH...
ijoejournal
Ijetcas14 643
Ijetcas14 643
Iasir Journals
Comprehensive identification of sensitive and stable ISFET sensing layer high...
Comprehensive identification of sensitive and stable ISFET sensing layer high...
IJECEIAES
P01052131135
P01052131135
IOSR Journals
Performance analysis of high-k materials as stern layer in ion-sensitive fiel...
Performance analysis of high-k materials as stern layer in ion-sensitive fiel...
TELKOMNIKA JOURNAL
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...
ijcsa
1-s2.0-S1369800114001711-main
1-s2.0-S1369800114001711-main
Mahdi Robat Sarpoushi
Eng4
Eng4
Sulieman Bahar
Relationship between Refractive Index, Electronic Polarizavility, Optical Ene...
Relationship between Refractive Index, Electronic Polarizavility, Optical Ene...
ijceronline
The influence of air gaps at 0.4 duty cycle on magnetic core type ‘e’ to in...
The influence of air gaps at 0.4 duty cycle on magnetic core type ‘e’ to in...
IAEME Publication
Cost of components of lion 2012 a2 04
Cost of components of lion 2012 a2 04
venugopalan srinivasan
ELECTRICAL PROPERTIES OF NI0.4MG0.6FE2O4 SYNTHESIZED BY CONVENTIONAL SOLID-ST...
ELECTRICAL PROPERTIES OF NI0.4MG0.6FE2O4 SYNTHESIZED BY CONVENTIONAL SOLID-ST...
IAEME Publication
Optimization of electric energy density in epoxy aluminium nanocomposite
Optimization of electric energy density in epoxy aluminium nanocomposite
iaemedu
Optimization of electric energy density in epoxy aluminium
Optimization of electric energy density in epoxy aluminium
iaemedu
1st paper
1st paper
Rinkesh Bhatt
Theoretical study of electronic properties of some aromatic rings
Theoretical study of electronic properties of some aromatic rings
Alexander Decker
H1102034954
H1102034954
IOSR Journals
Design and Simulation of a Fractal Micro-Transformer
Design and Simulation of a Fractal Micro-Transformer
IJERA Editor
Welcome to International Journal of Engineering Research and Development (IJERD)
Welcome to International Journal of Engineering Research and Development (IJERD)
IJERD Editor
electronic-structure_of_aluminum_nitride_-_theory
electronic-structure_of_aluminum_nitride_-_theory
Stephen Loughin
Thermal stress and surface integrity Modeling in Micro-EDM on Titanium alloy
Thermal stress and surface integrity Modeling in Micro-EDM on Titanium alloy
Saurabh Chaudhary
International Refereed Journal of Engineering and Science (IRJES)
International Refereed Journal of Engineering and Science (IRJES)
irjes
F1102033540
F1102033540
IOSR Journals
Electrical battery modeling for applications in wireless sensor networks and ...
Electrical battery modeling for applications in wireless sensor networks and ...
journalBEEI
Simulation and Modeling of Silicon Based Single Electron Transistor
Simulation and Modeling of Silicon Based Single Electron Transistor
IJECEIAES
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAs
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAs
IJMERJOURNAL
D030101017022
D030101017022
theijes
Effect of Series Resistance and Layer Thickness on PCE & Fill Factor in Pervo...
Effect of Series Resistance and Layer Thickness on PCE & Fill Factor in Pervo...
IRJET Journal
EFFECT OF ILLUMINATION INTENSITY ON THE PERFORMANCE OF PHOTOELECTRO CHEMICAL ...
EFFECT OF ILLUMINATION INTENSITY ON THE PERFORMANCE OF PHOTOELECTRO CHEMICAL ...
International Journal of Technical Research & Application
TCS3200 BASED COST EFFECTIVE FIRE DETECTION MODULE FOR AUTONOMOUS SECURITY SY...
TCS3200 BASED COST EFFECTIVE FIRE DETECTION MODULE FOR AUTONOMOUS SECURITY SY...
International Journal of Technical Research & Application
Más contenido relacionado
La actualidad más candente
Relationship between Refractive Index, Electronic Polarizavility, Optical Ene...
Relationship between Refractive Index, Electronic Polarizavility, Optical Ene...
ijceronline
The influence of air gaps at 0.4 duty cycle on magnetic core type ‘e’ to in...
The influence of air gaps at 0.4 duty cycle on magnetic core type ‘e’ to in...
IAEME Publication
Cost of components of lion 2012 a2 04
Cost of components of lion 2012 a2 04
venugopalan srinivasan
ELECTRICAL PROPERTIES OF NI0.4MG0.6FE2O4 SYNTHESIZED BY CONVENTIONAL SOLID-ST...
ELECTRICAL PROPERTIES OF NI0.4MG0.6FE2O4 SYNTHESIZED BY CONVENTIONAL SOLID-ST...
IAEME Publication
Optimization of electric energy density in epoxy aluminium nanocomposite
Optimization of electric energy density in epoxy aluminium nanocomposite
iaemedu
Optimization of electric energy density in epoxy aluminium
Optimization of electric energy density in epoxy aluminium
iaemedu
1st paper
1st paper
Rinkesh Bhatt
Theoretical study of electronic properties of some aromatic rings
Theoretical study of electronic properties of some aromatic rings
Alexander Decker
H1102034954
H1102034954
IOSR Journals
Design and Simulation of a Fractal Micro-Transformer
Design and Simulation of a Fractal Micro-Transformer
IJERA Editor
Welcome to International Journal of Engineering Research and Development (IJERD)
Welcome to International Journal of Engineering Research and Development (IJERD)
IJERD Editor
electronic-structure_of_aluminum_nitride_-_theory
electronic-structure_of_aluminum_nitride_-_theory
Stephen Loughin
Thermal stress and surface integrity Modeling in Micro-EDM on Titanium alloy
Thermal stress and surface integrity Modeling in Micro-EDM on Titanium alloy
Saurabh Chaudhary
International Refereed Journal of Engineering and Science (IRJES)
International Refereed Journal of Engineering and Science (IRJES)
irjes
F1102033540
F1102033540
IOSR Journals
Electrical battery modeling for applications in wireless sensor networks and ...
Electrical battery modeling for applications in wireless sensor networks and ...
journalBEEI
Simulation and Modeling of Silicon Based Single Electron Transistor
Simulation and Modeling of Silicon Based Single Electron Transistor
IJECEIAES
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAs
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAs
IJMERJOURNAL
D030101017022
D030101017022
theijes
La actualidad más candente
(19)
Relationship between Refractive Index, Electronic Polarizavility, Optical Ene...
Relationship between Refractive Index, Electronic Polarizavility, Optical Ene...
The influence of air gaps at 0.4 duty cycle on magnetic core type ‘e’ to in...
The influence of air gaps at 0.4 duty cycle on magnetic core type ‘e’ to in...
Cost of components of lion 2012 a2 04
Cost of components of lion 2012 a2 04
ELECTRICAL PROPERTIES OF NI0.4MG0.6FE2O4 SYNTHESIZED BY CONVENTIONAL SOLID-ST...
ELECTRICAL PROPERTIES OF NI0.4MG0.6FE2O4 SYNTHESIZED BY CONVENTIONAL SOLID-ST...
Optimization of electric energy density in epoxy aluminium nanocomposite
Optimization of electric energy density in epoxy aluminium nanocomposite
Optimization of electric energy density in epoxy aluminium
Optimization of electric energy density in epoxy aluminium
1st paper
1st paper
Theoretical study of electronic properties of some aromatic rings
Theoretical study of electronic properties of some aromatic rings
H1102034954
H1102034954
Design and Simulation of a Fractal Micro-Transformer
Design and Simulation of a Fractal Micro-Transformer
Welcome to International Journal of Engineering Research and Development (IJERD)
Welcome to International Journal of Engineering Research and Development (IJERD)
electronic-structure_of_aluminum_nitride_-_theory
electronic-structure_of_aluminum_nitride_-_theory
Thermal stress and surface integrity Modeling in Micro-EDM on Titanium alloy
Thermal stress and surface integrity Modeling in Micro-EDM on Titanium alloy
International Refereed Journal of Engineering and Science (IRJES)
International Refereed Journal of Engineering and Science (IRJES)
F1102033540
F1102033540
Electrical battery modeling for applications in wireless sensor networks and ...
Electrical battery modeling for applications in wireless sensor networks and ...
Simulation and Modeling of Silicon Based Single Electron Transistor
Simulation and Modeling of Silicon Based Single Electron Transistor
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAs
Structural, Electronic and Gamma Shielding Properties of BxAl1-xAs
D030101017022
D030101017022
Similar a Temperature dependent electrical response of orange dye complex based
Effect of Series Resistance and Layer Thickness on PCE & Fill Factor in Pervo...
Effect of Series Resistance and Layer Thickness on PCE & Fill Factor in Pervo...
IRJET Journal
EFFECT OF ILLUMINATION INTENSITY ON THE PERFORMANCE OF PHOTOELECTRO CHEMICAL ...
EFFECT OF ILLUMINATION INTENSITY ON THE PERFORMANCE OF PHOTOELECTRO CHEMICAL ...
International Journal of Technical Research & Application
TCS3200 BASED COST EFFECTIVE FIRE DETECTION MODULE FOR AUTONOMOUS SECURITY SY...
TCS3200 BASED COST EFFECTIVE FIRE DETECTION MODULE FOR AUTONOMOUS SECURITY SY...
International Journal of Technical Research & Application
Device simulation of perovskite solar cells with molybdenum disulfide as acti...
Device simulation of perovskite solar cells with molybdenum disulfide as acti...
journalBEEI
40120140507004
40120140507004
IAEME Publication
40120140507004 2
40120140507004 2
IAEME Publication
Space charges analysis on insulator with uniform layer contamination effect
Space charges analysis on insulator with uniform layer contamination effect
TELKOMNIKA JOURNAL
Impedance spectroscopic studies on pani ceo2 composites
Impedance spectroscopic studies on pani ceo2 composites
IAEME Publication
Numerical computation of eigenenergy and transmission coefficient of symmetri...
Numerical computation of eigenenergy and transmission coefficient of symmetri...
IAEME Publication
Estimation of Photovoltaic Module Parameters based on Total Error Minimizatio...
Estimation of Photovoltaic Module Parameters based on Total Error Minimizatio...
journalBEEI
Novel technique in charactarizing a pv module using
Novel technique in charactarizing a pv module using
eSAT Publishing House
IRJET- Effect of Series Resistance and Layer Thickness on PCE and Fill Factor...
IRJET- Effect of Series Resistance and Layer Thickness on PCE and Fill Factor...
IRJET Journal
IRJET- Modeling and Simulation of Electric Discharge Machine (EDM) and WEDM u...
IRJET- Modeling and Simulation of Electric Discharge Machine (EDM) and WEDM u...
IRJET Journal
Apllictaions of improved gilbert multiplier 2
Apllictaions of improved gilbert multiplier 2
IAEME Publication
Study and simulation with VHDL-AMS of the electrical impedance of a piezoelec...
Study and simulation with VHDL-AMS of the electrical impedance of a piezoelec...
International Journal of Power Electronics and Drive Systems
40120140505001
40120140505001
IAEME Publication
IRJET- Electrostatic Field Effect on Human Body Due to 400kv Overhead Transmi...
IRJET- Electrostatic Field Effect on Human Body Due to 400kv Overhead Transmi...
IRJET Journal
50120140503010
50120140503010
IAEME Publication
Fabrication and studying the dielectric properties of (polystyrene-copper oxi...
Fabrication and studying the dielectric properties of (polystyrene-copper oxi...
journalBEEI
A COMPARATIVE STUDY FOR SELECTION OF EFFECTIVE ELECTROLYTE SOLUTION FOR ELECT...
A COMPARATIVE STUDY FOR SELECTION OF EFFECTIVE ELECTROLYTE SOLUTION FOR ELECT...
IAEME Publication
Similar a Temperature dependent electrical response of orange dye complex based
(20)
Effect of Series Resistance and Layer Thickness on PCE & Fill Factor in Pervo...
Effect of Series Resistance and Layer Thickness on PCE & Fill Factor in Pervo...
EFFECT OF ILLUMINATION INTENSITY ON THE PERFORMANCE OF PHOTOELECTRO CHEMICAL ...
EFFECT OF ILLUMINATION INTENSITY ON THE PERFORMANCE OF PHOTOELECTRO CHEMICAL ...
TCS3200 BASED COST EFFECTIVE FIRE DETECTION MODULE FOR AUTONOMOUS SECURITY SY...
TCS3200 BASED COST EFFECTIVE FIRE DETECTION MODULE FOR AUTONOMOUS SECURITY SY...
Device simulation of perovskite solar cells with molybdenum disulfide as acti...
Device simulation of perovskite solar cells with molybdenum disulfide as acti...
40120140507004
40120140507004
40120140507004 2
40120140507004 2
Space charges analysis on insulator with uniform layer contamination effect
Space charges analysis on insulator with uniform layer contamination effect
Impedance spectroscopic studies on pani ceo2 composites
Impedance spectroscopic studies on pani ceo2 composites
Numerical computation of eigenenergy and transmission coefficient of symmetri...
Numerical computation of eigenenergy and transmission coefficient of symmetri...
Estimation of Photovoltaic Module Parameters based on Total Error Minimizatio...
Estimation of Photovoltaic Module Parameters based on Total Error Minimizatio...
Novel technique in charactarizing a pv module using
Novel technique in charactarizing a pv module using
IRJET- Effect of Series Resistance and Layer Thickness on PCE and Fill Factor...
IRJET- Effect of Series Resistance and Layer Thickness on PCE and Fill Factor...
IRJET- Modeling and Simulation of Electric Discharge Machine (EDM) and WEDM u...
IRJET- Modeling and Simulation of Electric Discharge Machine (EDM) and WEDM u...
Apllictaions of improved gilbert multiplier 2
Apllictaions of improved gilbert multiplier 2
Study and simulation with VHDL-AMS of the electrical impedance of a piezoelec...
Study and simulation with VHDL-AMS of the electrical impedance of a piezoelec...
40120140505001
40120140505001
IRJET- Electrostatic Field Effect on Human Body Due to 400kv Overhead Transmi...
IRJET- Electrostatic Field Effect on Human Body Due to 400kv Overhead Transmi...
50120140503010
50120140503010
Fabrication and studying the dielectric properties of (polystyrene-copper oxi...
Fabrication and studying the dielectric properties of (polystyrene-copper oxi...
A COMPARATIVE STUDY FOR SELECTION OF EFFECTIVE ELECTROLYTE SOLUTION FOR ELECT...
A COMPARATIVE STUDY FOR SELECTION OF EFFECTIVE ELECTROLYTE SOLUTION FOR ELECT...
Más de IAEME Publication
IAEME_Publication_Call_for_Paper_September_2022.pdf
IAEME_Publication_Call_for_Paper_September_2022.pdf
IAEME Publication
MODELING AND ANALYSIS OF SURFACE ROUGHNESS AND WHITE LATER THICKNESS IN WIRE-...
MODELING AND ANALYSIS OF SURFACE ROUGHNESS AND WHITE LATER THICKNESS IN WIRE-...
IAEME Publication
A STUDY ON THE REASONS FOR TRANSGENDER TO BECOME ENTREPRENEURS
A STUDY ON THE REASONS FOR TRANSGENDER TO BECOME ENTREPRENEURS
IAEME Publication
BROAD UNEXPOSED SKILLS OF TRANSGENDER ENTREPRENEURS
BROAD UNEXPOSED SKILLS OF TRANSGENDER ENTREPRENEURS
IAEME Publication
DETERMINANTS AFFECTING THE USER'S INTENTION TO USE MOBILE BANKING APPLICATIONS
DETERMINANTS AFFECTING THE USER'S INTENTION TO USE MOBILE BANKING APPLICATIONS
IAEME Publication
ANALYSE THE USER PREDILECTION ON GPAY AND PHONEPE FOR DIGITAL TRANSACTIONS
ANALYSE THE USER PREDILECTION ON GPAY AND PHONEPE FOR DIGITAL TRANSACTIONS
IAEME Publication
VOICE BASED ATM FOR VISUALLY IMPAIRED USING ARDUINO
VOICE BASED ATM FOR VISUALLY IMPAIRED USING ARDUINO
IAEME Publication
IMPACT OF EMOTIONAL INTELLIGENCE ON HUMAN RESOURCE MANAGEMENT PRACTICES AMONG...
IMPACT OF EMOTIONAL INTELLIGENCE ON HUMAN RESOURCE MANAGEMENT PRACTICES AMONG...
IAEME Publication
VISUALISING AGING PARENTS & THEIR CLOSE CARERS LIFE JOURNEY IN AGING ECONOMY
VISUALISING AGING PARENTS & THEIR CLOSE CARERS LIFE JOURNEY IN AGING ECONOMY
IAEME Publication
A STUDY ON THE IMPACT OF ORGANIZATIONAL CULTURE ON THE EFFECTIVENESS OF PERFO...
A STUDY ON THE IMPACT OF ORGANIZATIONAL CULTURE ON THE EFFECTIVENESS OF PERFO...
IAEME Publication
GANDHI ON NON-VIOLENT POLICE
GANDHI ON NON-VIOLENT POLICE
IAEME Publication
A STUDY ON TALENT MANAGEMENT AND ITS IMPACT ON EMPLOYEE RETENTION IN SELECTED...
A STUDY ON TALENT MANAGEMENT AND ITS IMPACT ON EMPLOYEE RETENTION IN SELECTED...
IAEME Publication
ATTRITION IN THE IT INDUSTRY DURING COVID-19 PANDEMIC: LINKING EMOTIONAL INTE...
ATTRITION IN THE IT INDUSTRY DURING COVID-19 PANDEMIC: LINKING EMOTIONAL INTE...
IAEME Publication
INFLUENCE OF TALENT MANAGEMENT PRACTICES ON ORGANIZATIONAL PERFORMANCE A STUD...
INFLUENCE OF TALENT MANAGEMENT PRACTICES ON ORGANIZATIONAL PERFORMANCE A STUD...
IAEME Publication
A STUDY OF VARIOUS TYPES OF LOANS OF SELECTED PUBLIC AND PRIVATE SECTOR BANKS...
A STUDY OF VARIOUS TYPES OF LOANS OF SELECTED PUBLIC AND PRIVATE SECTOR BANKS...
IAEME Publication
EXPERIMENTAL STUDY OF MECHANICAL AND TRIBOLOGICAL RELATION OF NYLON/BaSO4 POL...
EXPERIMENTAL STUDY OF MECHANICAL AND TRIBOLOGICAL RELATION OF NYLON/BaSO4 POL...
IAEME Publication
ROLE OF SOCIAL ENTREPRENEURSHIP IN RURAL DEVELOPMENT OF INDIA - PROBLEMS AND ...
ROLE OF SOCIAL ENTREPRENEURSHIP IN RURAL DEVELOPMENT OF INDIA - PROBLEMS AND ...
IAEME Publication
OPTIMAL RECONFIGURATION OF POWER DISTRIBUTION RADIAL NETWORK USING HYBRID MET...
OPTIMAL RECONFIGURATION OF POWER DISTRIBUTION RADIAL NETWORK USING HYBRID MET...
IAEME Publication
APPLICATION OF FRUGAL APPROACH FOR PRODUCTIVITY IMPROVEMENT - A CASE STUDY OF...
APPLICATION OF FRUGAL APPROACH FOR PRODUCTIVITY IMPROVEMENT - A CASE STUDY OF...
IAEME Publication
A MULTIPLE – CHANNEL QUEUING MODELS ON FUZZY ENVIRONMENT
A MULTIPLE – CHANNEL QUEUING MODELS ON FUZZY ENVIRONMENT
IAEME Publication
Más de IAEME Publication
(20)
IAEME_Publication_Call_for_Paper_September_2022.pdf
IAEME_Publication_Call_for_Paper_September_2022.pdf
MODELING AND ANALYSIS OF SURFACE ROUGHNESS AND WHITE LATER THICKNESS IN WIRE-...
MODELING AND ANALYSIS OF SURFACE ROUGHNESS AND WHITE LATER THICKNESS IN WIRE-...
A STUDY ON THE REASONS FOR TRANSGENDER TO BECOME ENTREPRENEURS
A STUDY ON THE REASONS FOR TRANSGENDER TO BECOME ENTREPRENEURS
BROAD UNEXPOSED SKILLS OF TRANSGENDER ENTREPRENEURS
BROAD UNEXPOSED SKILLS OF TRANSGENDER ENTREPRENEURS
DETERMINANTS AFFECTING THE USER'S INTENTION TO USE MOBILE BANKING APPLICATIONS
DETERMINANTS AFFECTING THE USER'S INTENTION TO USE MOBILE BANKING APPLICATIONS
ANALYSE THE USER PREDILECTION ON GPAY AND PHONEPE FOR DIGITAL TRANSACTIONS
ANALYSE THE USER PREDILECTION ON GPAY AND PHONEPE FOR DIGITAL TRANSACTIONS
VOICE BASED ATM FOR VISUALLY IMPAIRED USING ARDUINO
VOICE BASED ATM FOR VISUALLY IMPAIRED USING ARDUINO
IMPACT OF EMOTIONAL INTELLIGENCE ON HUMAN RESOURCE MANAGEMENT PRACTICES AMONG...
IMPACT OF EMOTIONAL INTELLIGENCE ON HUMAN RESOURCE MANAGEMENT PRACTICES AMONG...
VISUALISING AGING PARENTS & THEIR CLOSE CARERS LIFE JOURNEY IN AGING ECONOMY
VISUALISING AGING PARENTS & THEIR CLOSE CARERS LIFE JOURNEY IN AGING ECONOMY
A STUDY ON THE IMPACT OF ORGANIZATIONAL CULTURE ON THE EFFECTIVENESS OF PERFO...
A STUDY ON THE IMPACT OF ORGANIZATIONAL CULTURE ON THE EFFECTIVENESS OF PERFO...
GANDHI ON NON-VIOLENT POLICE
GANDHI ON NON-VIOLENT POLICE
A STUDY ON TALENT MANAGEMENT AND ITS IMPACT ON EMPLOYEE RETENTION IN SELECTED...
A STUDY ON TALENT MANAGEMENT AND ITS IMPACT ON EMPLOYEE RETENTION IN SELECTED...
ATTRITION IN THE IT INDUSTRY DURING COVID-19 PANDEMIC: LINKING EMOTIONAL INTE...
ATTRITION IN THE IT INDUSTRY DURING COVID-19 PANDEMIC: LINKING EMOTIONAL INTE...
INFLUENCE OF TALENT MANAGEMENT PRACTICES ON ORGANIZATIONAL PERFORMANCE A STUD...
INFLUENCE OF TALENT MANAGEMENT PRACTICES ON ORGANIZATIONAL PERFORMANCE A STUD...
A STUDY OF VARIOUS TYPES OF LOANS OF SELECTED PUBLIC AND PRIVATE SECTOR BANKS...
A STUDY OF VARIOUS TYPES OF LOANS OF SELECTED PUBLIC AND PRIVATE SECTOR BANKS...
EXPERIMENTAL STUDY OF MECHANICAL AND TRIBOLOGICAL RELATION OF NYLON/BaSO4 POL...
EXPERIMENTAL STUDY OF MECHANICAL AND TRIBOLOGICAL RELATION OF NYLON/BaSO4 POL...
ROLE OF SOCIAL ENTREPRENEURSHIP IN RURAL DEVELOPMENT OF INDIA - PROBLEMS AND ...
ROLE OF SOCIAL ENTREPRENEURSHIP IN RURAL DEVELOPMENT OF INDIA - PROBLEMS AND ...
OPTIMAL RECONFIGURATION OF POWER DISTRIBUTION RADIAL NETWORK USING HYBRID MET...
OPTIMAL RECONFIGURATION OF POWER DISTRIBUTION RADIAL NETWORK USING HYBRID MET...
APPLICATION OF FRUGAL APPROACH FOR PRODUCTIVITY IMPROVEMENT - A CASE STUDY OF...
APPLICATION OF FRUGAL APPROACH FOR PRODUCTIVITY IMPROVEMENT - A CASE STUDY OF...
A MULTIPLE – CHANNEL QUEUING MODELS ON FUZZY ENVIRONMENT
A MULTIPLE – CHANNEL QUEUING MODELS ON FUZZY ENVIRONMENT
Temperature dependent electrical response of orange dye complex based
1.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 269 TEMPERATURE DEPENDENT ELECTRICAL RESPONSE OF ORANGE-DYE COMPLEX BASED SCHOTTKY DIODE Syed Abdul Moiz 1 , Ahmed M. Nahhas2 1 (Department of Electrical Engineering, Faculty of Engineering and Islamic Architecture, Umm Al Qura University, Makkah, Saudi Arabia) 2 (Department of Electrical Engineering, Faculty of Engineering and Islamic Architecture, Umm Al Qura University, Makkah, Saudi Arabia) ABSTRACT In order to investigate the temperature dependent electrical response of Orange-Dye complex, Schottky diodes were fabricated from solution with spin coating method. From their current-voltage response it is observed that Schottky diode follows space charge limited current model. Therefore, by applying space charge limited current model different charge transport parameters such as trap factor, mobility, and threshold voltage and trap density are determined and their response as a function of temperature are investigated and discussed. It is observed that all charge transport parameters improves at elevated temperature within given temperature range. This study will help us to understand the nature of Orange Dye Complexes for their future applications. Keywords: Orange Dye, Organic Semiconductor, Charge Injection, Schottky diode & SCLC model. I. INTRODUCTION Organic semiconducting based electronic devices have already received considerable attention by different groups of researchers and technologists due to many advantages such as light weight, flexible, require simple fabrication technology, low cost, deposited on various substrate and many other advantages [1-4]. Despite their pronounced improvement and currently at the early stage of commercialisation, some of the fundamental features of charge transport process are still not clear and required comprehensive understanding [5-8]. INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATION ENGINEERING & TECHNOLOGY (IJECET) ISSN 0976 – 6464(Print) ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April, 2013, pp. 269-279 © IAEME: www.iaeme.com/ijecet.asp Journal Impact Factor (2013): 5.8896 (Calculated by GISI) www.jifactor.com IJECET © I A E M E
2.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 270 Charge transport process inside the organic semiconductor plays a vital role to define the efficiency of electronic devices. Under the influence of applied potential, electrons and holes are injected from metal to organic semiconductor layer and are hoped from one location to the other location inside the organic semiconductor as charge transport process. Both charge injection and hopping transport process are very complex in nature and depends on many other factors, but some of such factors can be characterized as a function of temperature [9, 10]. Broadly speaking, the electrical response of organic semiconductor can be classified either as injection limited or bulk limited depends on the limitation imposed by either the barrier at metal-organic semiconductor interface or by the bulk semiconductor itself for hopping process. Generally, the mobility of organic semiconductor is very low as compared to other inorganic semiconductor; therefore most of the cases the charge transport limitation is imposed by the bulk nature of semiconductor itself to defined their electrical response [11]. In bulk limited charge transport process, injected charges occupies organic space between electrodes for longer period of time and make space charge region, such phenomena can be modelled by space charge limited current (SCLC) to define their electrical response [12]. Orange-Dye (C17H17N5O2) with Vinyl-Ehtynyl-Trimehyl-Piperiodole(VETP, C12H19NO) as complex is emerged as novel organic semiconductor and offers many unique properties which are highly suitable for sensors especially for humidity sensor and photo-sensors [13-16]. Despite their importance very limited amount of information about this complex is available in literature. Therefore in this study we investigated the electrical response of OD-VETP complex as a function of temperature and different charge transport parameters were evaluated and their behaviour as a function of temperature is discussed. II. EXPERIMENTAL All chemical were purchases from local market and were used as it is without any further purification. The molecular structure of both OD and VETP are shown in Figure 1. OD has molecular weight 323 gm/mole with density 0.9 gm/cm3 , while VETP has molecular weight 0.6 gm/mole and density 0.6 gm/cm3 [14-16]. Both organic materials are solution in water and make charge transfer complex at room temperature. In order to make the complex 5% by weight of VETP is mixed in aqueous OD solution and was stirred in an ultrasound container for more than 1 hour and kept them in an inert nitrogen environment for more than 24 hours to settle downs. Meanwhile SnO2 coated glass substrate were cleaned and OD-VETP complex were deposited by spin coating method at 1000 rpm for 30 second. From simple optical examination it was clearly observed that grown thin film showed homogenous surface and their thickness was estimated approximately 600 nm. For external electrical characterization, silver metal was deposited over OD-VETP surface in spherical shape with diameter ~6 mm as electrode and then devices were annealed at 100 o C in inert environment for more than an hour. The cross- sectional diagram of the Schottky diode is shown in Figure 2.
3.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 271 Figure 1. Molecular structure of (a) Orange nitrogen Dye (OD) and (b) VETP complex Current-voltage responses of Schottky diode were measured with help of dc measurement station with temperature adjusting facilities, where four-probe method were used for electrical characterization, but for simplicity only two probes are shown in Figure 2. For each 5 o C increments, the electrical properties of diode were measured, where temperature measurement were carried out in the range of 25 o C to 80 o C with and experimental temperature error of ±0.5 o C. By using hot-probe method, it was observed that OD-VETP complex is a p-type semiconductor just like OD semiconductor. OD-VETP Complex Glass Substrate Silver Electrode SnO2 Electrode Figure 2. A schematic cross-sectional view of SnO2 / OD-VETP/ Ag diode
4.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 272 III. RESULTS & DISCUSSION The current-voltage characteristics of SnO2/OD-VETP/Ag in forward bias is shown in Figure 3 as a function of temperature from 25, 40, 60 and 80 o C respectively. From the figure, it is clearly observed that the Schottky diode follows nonlinear typical diode behaviour in the forward bias. The current passing through the device is sharply rises as a function of temperature and at 80 o C the maximum value of current 5.5 µA is observed at 10 volts, which is nearly 20 times higher than the current passing through the Schottky diode at 25o C as same voltage. Generally, VETP is highly resistive semiconductor and therefore OD- VETP complex shows high resistance as compared to OD itself, but still complex material is very material for many sensor applications [13-16]. If we define V as applied voltage then current-density (J) can be defined by SCLC model as [17,18] , 8 9 3 2 d V J poθµεε= (1) 0 1 2 3 4 5 6 0 2.5 5 7.5 10 Current(μA) Voltage (Volts) 80oC 60oC 40oC 25oC Figure 3. Current-voltage characteristics for SnO2/OD-VETP/Ag Schottky diode at 25, 40, 60 and 80 o C respectively Where εr is the relative dielectric constant for OD-VETP complex and can be approximate as 3, just like as other organic semiconductor. Similarly εo is standard dielectric constant and equal to the 8.65x10-14 F/cm, θ is refer as trap factor, µp is the mobility of hole and d is the thickness of OD-VETP thin film. It is unanimously accepted that the mobility of free carriers inside organic semiconductor, which is direct function of applied electric field, can be described by Poole-Frenkel equation as [19]
5.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 273 ( ),exp Eop βµµ = (2) where µo and β can be defined as zero field mobility and Poole-Frenkel factor respectively. Both above discuss models give us valuable information about charge transport mechanism for organic semiconductor. If we incorporate mobility from equation 2 into the equation, then equation 1 can be written after some manipulation as ( ) ,exp 8 9 3 2 d V EJ oo βθµεε= (3) By simple manipulation the equation (3) can be written as [20] , 8 9 ln 2 E dE J o βθµεε + = (4) Where E is applied electric field (V/d). In order to justify the SCLC model, the plots of ln (J/E2 ) vs. square root of E are drawn in Figure 4, as a function of temperature. It is observed that independent of given temperature range the Schottky diode follows SCLC model to define their current-voltage response. As OD-VETP complex is a p-type material, therefore we can assume that SnO2 provide ohmic contact to OD-VETP complex, in other way holes are injected from SnO2 into OD-VETP and forms space charge region inside complex. From the both Figure 3 and 4 it is also clear that conductivity inside complex sharply rises with increment of temperature. -26 -22 -18 -14 -10 50 175 300 425 ln(J/E2)(A/E2) [Electric Field (V/cm)]1/2 80oC 60oC 40oC 25oC Figure 4. In (J/E2 ) vs. E1/2 response for SnO2/OD-VETP/Ag Schottky diode as a function of temperature 25, 40, 60, and 80 o C respectively
6.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 274 The SCLC can be classified into three regions, depending on voltage. These regions are termed as (1) ohmic region, (2) trapped charge region, and (3) space charge region. It can observed from SCLC response of OD-VETP complex that initially the current increases very slowly and then rises sharply with increment of applied electric field at all temperature [21]. The initial region of SCLC is generally considered as high resistive ohmic region and can be model as [6,20,21] ; L V NeJ oohm µ= (5) Where e is the charge (1.6x 10-19 C) of hole carriers, No is the free hole density. With the increment of voltage, a transition is observed from ohmic region to the trapped space charge region and this transition is generally defined at some threshold voltage (VT), also called trapped filled voltage. Figure 5 shows the response of threshold voltage as a function of temperature for Schottky diode. Figure 5. Threshold voltage behaviour of SnO2/OD-VETP/Ag Schottky diode as a function of temperature It is observed that threshold voltage is linearly decreases as a function of temperature with given temperature range, which indicates that the transition of ohmic region to trapped space charge region for OD-VETP diode is also linearly decreasing with respect to temperature. Threshold voltage for SCLC model can be further defines as [17]
7.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 275 . 2 2 s t TFL deN V ε = (6) Where Nt is defined as trap density (cm-3 ). Density of these traps is determined for OD-VETP Schottky diode with the help of above equation as a function of temperature. The trap density for SnO2/OD-VETP/Ag Schottky diode as a function of temperature is shown in Figure 6. Traps are nothing, just localized states inside organic semiconductor having capability to hold carrier for some period of time. These traps are generated due a large number of reasons but can be classified as chemical or structural traps. Grains boundary, bond defects, chains ends etc. are termed as structural defects, while traces of chemical reactants, and incorporation of impurities materials and other environment elements are termed as chemical traps [22]. These traps can never be eliminated for organic semiconductor but can be minimized by careful processing during thin film growth and device fabrication process. However, these traps are direct function of energy (or temperature), every trap state is associated with some energy, it can capture only those carriers who have lower energy then trap associated energy. Therefore when temperature increases the average kinetic energy of holes are also increases and available trap density is exponentially decreased for these energetic carriers as shown in Figure 6. 2 3 4 5 6 7 20 40 60 80 TrapDensity(1020m-3) Temperature (oC) Figure 6. Trap density for SnO2/OD-VETP/Ag Schottky diode as a function of temperature Mobility of holes is another important parameter, which play a very vital role to define the electric response of OD-VETP complex and can easily be determine from SCLC equation. The actual mobility deviates from ideally mobility by trap factor, and such trap factor (θ) can be defined as [17]
8.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 276 , 0 0 + = tpp p θ (7) where po (cm-3 ) and pt (cm-3 ) are free and trapped carrier density. These carrier density and hence trap factor is determine for OD-VETP Schottky diode and are shown in Figure 7. Trap factor is also increases as a function of temperature, and will help us to estimate the actual mobility of OD-VETP complex, which is shown in Figure 8. Like trap factor, mobility is also exponential function of temperature and are sharply rises at higher temperature. The behaviour of mobility as a function of temperature inside the complex is the collective response of all above space charge parameters as discussed above. At low temperature injected holes face high trap density and only small holes are hopped and succeeded to reach another electrode, however at higher temperature a large no of trapped carriers become part of free carriers and hopped to reach opposite electrode to give rise higher mobility and hence current. Similarly, when applied voltage is further increasing, holes receives an extra increasing force to overcome these traps barriers and hence a large no of holes are capable to reach at opposite electrode to give rise higher value of current. Therefore, at higher voltage and temperature higher current is observed for OD-VETP Schottky diode. 0.25 0.375 0.5 0.625 20 40 60 80 TrapFactor(θ) Temperature (oC) Figure 7. Trap factor as a function of temperature for OD-VETP Schottky diode
9.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 277 0 40 80 120 160 200 20 40 60 80 Mobility(108cm2/Vsec) Temperature (0C) Figure 8. Mobility of holes as a function of temperature for OD-VETP Schottky diode IV. CONCLUSIONS In this study, we have investigated the electrical response of novel OD-VETP complex based Schottky diode as a function of temperature from the range of 25 o C to 80 o C. From their current-voltage properties, it was observed that Schottky diode follows space charge limited current. Therefore, by applying space charge limited current model, different charge transport parameters such as threshold voltage, trap density, trap factor and hole mobility were estimated as a function of temperature. It was observed that trap density exponentially decreases, while threshold voltage also decreases linearly as a function of temperature. On the other hand, both trap factor and hole mobility are exponentially improved at elevated temperature. At high temperature more and more holes are injected and hopped with higher mobility and faced lower trap density to reach opposite electrode and give rise higher value for current. This study will help to understand the nature of the OD- VETP and will facilitate to efficiently utilize them for different types of organic semiconductor based electronic devices. ACKNOWLEDGEMENTS Authors are thankful to Professor Khasan S Karimov for their comments and valuable suggestion to improve this study.
10.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 278 REFERENCES [1]. J. Meyer, S. Hamwi, M. Kröger, W. Kowalsky, T. Riedl, A. Kahn, Transition metal oxides for organic electronics: Energetics, device physics and applications, Advanced Materials, 24 (40), 2012, 5408-5427. [2]. C. Dimitrakopoulos, P. Malenfant, Organic thin film transistors for large area electronics, Advanced Materials, 14 (2), 2002, 99-117. [3]. K. Karimov, M. Ahmed, S. Moiz, M. Fedorov, Temperature-dependent properties of organic-on-inorganic Ag/p-CuPc/n-GaAs/Ag photoelectric cell, Solar Energy Materials and Solar Cells, 87 (1-4), 2005, 61-75. [4]. G. Malliaras, R. Friend, An organic electronics primer, Physics Today, 58 (5), 2005, 53-58. [5]. H. Sirringhaus, T. Sakanoue, J. Chang, Charge-transport physics of high-mobility molecular semiconductors, Physica Status Solidi (B) Basic Research, 249 (9), 2012, 1655-1676. [6]. S. Moiz, M. Ahmed, K. Karimov, M. Mehmood, Temperature-dependent current- voltage characteristics of poly-N-epoxypropylcarbazole complex, Thin Solid Films, 516 (1), 2007, 72-77. [7]. S. Moiz, A. Nahhas, H. Um, S. Jee, H. Cho, S. Kim, J. Lee, A stamped PEDOT:PSS- silicon nanowire hybrid solar cell, Nanotechnology, 23 (14), 2012, 145401. [8]. T. Kelley, P. Baude, C. Gerlach, D. Ender, D. Muyres, M. Haase, D. Vogel, S. Theiss, Recent progress in organic electronics: Materials, devices, and processes, Chemistry of Materials, 16 (23), 2004, 4413-4422. [9]. I. Campbell, D. Smith, Electrical Transport in Organic Semiconductor, Int’l J. of High Speed Electronics and Systems, 11 (2), 2001, 223-249. [10]. A. Chempbell, D. Bradley, D. Lidzey, Space Charge Limited Conduction with Traps in Poly (phenylene vinylene) Light Emitting Diode, J. of Applied Physics, 82 (12), 1997, 6326-6342. [11]. Y. Peng, J. Yang, Field distribution and criterion for bulk-limited and injection- limited current conduction in single layer organic light-emitting devices, Applied Physics A: Materials Science and Processing, 80 (7), 2005, 1511-1516. [12]. D. Nuzzo, S. Van Reenen, R Janssen, M. Kemerink, S. Meskers, Evidence for space-charge-limited conduction in organic photovoltaic cells at open-circuit conditions, Physical Review B - Condensed Matter and Materials Physics, 87 (8), 2013, 085207. [13]. M. Chani, K. Karimov, F. Khalid, S. Abbas, M. Bhatty, Orange dye - polyaniline composite based impedance humidity sensors, Chinese Phys. B, 22, 2013, 010701. [14]. M. Ahmed, K. Karimov, S. Moiz, Photoelectric behaviour of n-GaAs/orange dye, vinyl-ethynyl-trimethyl-piperidole/conductive glass sensor, Thin Solid Films, 516 (21), 2008, 7822-7827. [15]. K. Karimov, M. Sayyad, M. Ali, M. Khan, S. Moiz, K. Khan, H. Farah, Z. Karieva, Electrochemical properties of Zn/orange dye aqueous solution/carbon cell, Journal of Power Sources, 155(2), 2006, 475-477. [16]. M. Saleem, K. Karimov, Z. Karieva, A. Mateen, Humidity sensing properties of CNT-OD-VETP nanocomposite films, Physica E: Low-Dimensional Systems and Nanostructures, 43 (1), 2010, 28-32. [17]. P. Mark, W. Helfrich, Space Charge Limited Currents in Organic Crystals, J. of Applied Physics, 33 (1), 1962, 205.
11.
International Journal of
Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 – 6464(Print), ISSN 0976 – 6472(Online) Volume 4, Issue 2, March – April (2013), © IAEME 279 [18]. S. Moiz, M. Ahmed, K. Karimov, M. Mehmood, Temperature-dependent current- voltage characteristics of poly-N-epoxypropylcarbazole complex, Thin Solid Films, 516 (1), 2007, 72-77. [19]. D. Braun, Electronic injection and conduction processes for polymer devices, Journal of Polymer Science, Part B: Polymer Physics, 41 (21), 2003, 2622-2629. [20]. H. Klauk, Organic Electronics: Materials, Manufacturing and Applications, Wiley- VCH Verlag GmbH, Weinheim, 2003. [21]. S. Moiz, M. Ahmed, K. Karimov, F. Rehman, J. Lee, Space charge limited current- voltage characteristics of organic semiconductor diode fabricated at various gravity conditions, Synthetic Metals, 159 (13), 2009, 1336-1339. [22]. T. Nguyen, Defect analysis in organic semiconductors, Materials Science in Semiconductor Processing, 9 (1-3), 2006, 198-203. [23]. K C Sajjan, Muhammad Faisal, Khened B.S and Syed Khasim, “Humidity Sensing Properties of Polyaniline/Potassium Molybdate Composites” International Journal of Electrical Engineering & Technology (IJEET), Volume 4, Issue 2, 2013, pp. 179 - 186, ISSN Print : 0976-6545, ISSN Online: 0976-6553. [24]. Ahmed Thabet, “Experimental Investigation on Thermal Electric and Dielectric Characterization for Polypropylene Nanocomposites using Cost-Fewer Nanoparticles”, International Journal of Electrical Engineering & Technology (IJEET), Volume 4, Issue 2, 2013, pp. 1 - 12, ISSN Print : 0976-6545, ISSN Online: 0976-6553.
Descargar ahora