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Zinc Oxide Nanowires Synthesized using a Hot
Tube Thermal Evaporation under Intermediate
               Heating Period
            Samsudi Sakrani, Peshawa Omer
               Amin, Syahida Suhaimi


                   December 2012
Contents


•   INTRODUCTION
•   METHODOLOGY
•   CHARACTERIZATION
•   RESULTS AND DISCUSSION
•   CONCLUSIONS




                             2
INTRODUCTION

Properties of Zinc Oxide
•Direct band gap semiconductor 3.37 eV.
•Large excitation binding energy 60 meV.
•Near UV emission and transparent
conductivity.
•Piezoelectric property resulting from its
non-centrosymetric structure.
•Biosafe and biocompatible.

                                             3
Previous-Current Works

• Basically, previous works on ZnO NWs
  covered randomly orientated samples
  (Abdulgafour et al., Comedi et al.),
  Synthesis (G¨uell et al.) and
  characterization (Chenet et al., Pan et
  al., Suh et al.).
• Current work investigates the effect
  of tilt angle and flow rate on the
  structural properties of ZnO
  nanowires - Not reported before.
                                            4
Crystal Structure of the ZnO
                  ZnO crystallizes in two main
                  forms, hexagonal wurtzite &
                  cubic zincblende
 wurtzite
                   Wurtzite: Most stable at ambient conditions
                   and thus most common




                   Zincblende form can be stabilized by
zincblende         growing ZnO on substrates with cubic
                   lattice structure




                                                                 5
Vapor-Liquid-Solid growth mechanism
                                     T                        liquid
                                                           960°C
                                          Au +                           ZnO+ liquid
• Nucleation of Au catalyst               liquid

                                                      Au + ZnO
• ZnO diffuses into Au (Au/Zn)
                                          Au                                    ZnO
• Eutectic is attained, melting
  point of Au-Zn alloy                                             ZnO

  becomes lower, ∼650 °C                           ZnO
                                                                             ZnO
• Precipitation at 960°C, i.e.
  growth of vertical ZnO begin       Au            Au/Zn           ZnO
  with incoming vapour and
                                                   Substrate
  increase its height. Wisker     Au droplet     Au/Zn- Supersaturation      Nanorod
                                                  alloy
  is formed (blue)                                           and
                                               formation precipitation
                                                                            formation
METHODOLOGY




              7
Characterization




                   8
Experimental Setup
TET




                           9
Thermal Evaporation Techniques
            (TET)




                            10
Experiment

Source Preparation
  2ZnO +    C       Zn   +      CO2,
  ZnO   +   CO           Zn     +       CO2, 
  ZnO   +   (1 – x)CO    ZnOx       +     (1 – x)CO2,   X<1

Growth Parameters
• Catalyst used: Au (gold) nanoparticles.
• Distance between source and substrate.
• Angle between substrate and horizontal axis.
• Flow rate.
• Growth time.
                                                              11
Samples & Variables
Sample Tilt Angle Distance, Flow rate    Furnace      Growth
                   source-   (sccm)     Temperatur   time (hr)
            (°)   substrate                 e
                    (cm)                   (°)



  S1       30        18        1.1         960         1.0

  S2       30        18        3.0         960         1.0

  S3       30        18        3.0         960         1.5

  S4        0        18        3.0         960         1.5

  S5       30        18        5.0         960         1.5


                                                                 12
FESEM & EDAX: Tilt Angle, 30°



                                                                                                                                            FESEM
                                                                                                                                            images




                                                   001
                                          7200

                                          6400                      Si
                                          5600
           001
                                          4800

                                 Counts   4000

                                          3200

                                          2400
                                                              Zn    Au     Au                                             Au        Au
                                          1600           O
                                                             Zn          Au                                                Zn      Zn
                                           800

                                             0
                                                 0.00        1.00    2.00       3.00   4.00   5.00   6.00   7.00   8.00     9.00    10.00
                        1.0 µm
                        1.0 µm
                                                                                               keV




(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at tilt angle 30° and growth time 90 min.
                                                                                                                                                     13
FESEM & EDAX: Tilt Angle, 0°


                                                                                                                                      FESEM
                                                                                                                                      images




                                               002

                                       3300
                                       3000                   Si
                                       2700
         002
                                       2400
                                       2100
                              Counts




                                       1800
                                       1500
                                       1200
                                        900             Zn    Au     Au                                             Au        Au
                                                     O Zn
                                        600                        Au                                                Zn      Zn
                                        300
                                          0
                                              0.00     1.00    2.00       3.00   4.00   5.00   6.00   7.00   8.00     9.00    10.00
                     1.0 µm
                     1.0 µm                                                              keV


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at tilt angle 0° and growth time 90 min.

                                                                                                                                               14
Effect of Substrate Tilt’s Angle


Substrate Zn (Atom   O (Atom   Aspect
 angle, θ    %)         %)      Ratio
   (°)


   0       7.47      11.98      5.5

   30      7.37      12.82      7.7




                                            15
FESEM & EDAX: Flow Rate, 1.1 sccm



                                                                                                                                      FESEM
                                                                                                                                      images




                                                005

                                      15000
                                      13500                     Si

                                      12000
                                      10500
                             Counts




                                       9000
                                       7500
                                       6000
                                                                     Au                                                       Au
                                       4500                    Au
                                                         Zn       Au                                              Au        Pt
                                       3000           O Zn     Pt
                                                                  Pt Pt                                          Pt Zn       Zn
                                       1500
                                          0
                                              0.00      1.00     2.00     3.00   4.00   5.00    6.00   7.00   8.00   9.00     10.00

                                                                                          keV

          005        10 µm
                     10 µm


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 1.1 sccm and growth time 60 min.

                                                                                                                                               16
FESEM & EDAX: Flow Rate, 3.0 sccm




                                                                                                                                           FESEM
                                                                                                                                           images




                                                      004

                                            13500
                                                                      Si
                                            12000

                                            10500

                                            9000
                                   Counts


                                            7500

                                            6000

                                            4500                           Au                                                      Au
                                                               Zn    Au
                                                                        Au                                             Au        Pt
                                            3000                     Pt
                                                            O Zn        Pt Pt                                         Pt Zn       Zn
                                            1500

                                                0
                                                    0.00      1.00     2.00     3.00   4.00   5.00   6.00   7.00   8.00   9.00     10.00

                                                                                               keV

               004         10 µm
                           10 µm


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 3 sccm and growth time 60 min.

                                                                                                                                                17
FESEM & EDAX: Flow Rate, 5.0 sccm



                                                               FESEM
                                                               images




(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 5 sccm and growth time 90 min.

                                                                        18
Effect of Argon Flow Rate


Ar Flow   Zn (Atom O (Atom Aspect
 Rate        %)       %)    Ratio
(sccm)

  1.1       0.29     1.82     8.6

  3.0       0.82     1.23     4.1

  5.0       1.67     6.05     10.5


                                      19
PL Measurement

Effect of Angle Between Substrate and Horizontal Axis on
the Optical Properties of ZnO Nanowires.




                                                           20
PL Measurement

Effect of Flow Rate on the Optical Properties of
ZnO Nanowires.




  PL results of ZnO nanowires on Si        PL results of ZnO nanowires on
  (a) at flow rate 1.1 sccm, (b) at flow   Si at growth time 90 mints and
  rate 3 sccm and (c) at flow rate 5       flow rate 5 sccm
  sccm.
                                                                            21
CONCLUSION

• ZnO NWs have been successfully grown on Si
  (100) substrate using a hot tube thermal
  evaporation under the substrate tilt angle
  30° and argon flow rate of 5 sccm.
• Improved densities and higher aspect ratio
  were observed.
• Emission properties occurred at a peak
  around 380 nm (Eg = 3.27 eV) over the
  visible region, but could slightly shifted due
  to different processes and contaminations.
                                                   22
Acknowledgement


•UTM for financial assistance under RU
grant (J130000.7126.01H38).
•Member of QuaSR group for the support.
•Everyone involved in assisting and
succeeding the research.



                                          23
References
•   Abdulgafour, H. I., Hassan, Z., Al-Hardan, N. H. and Yam, F. K. Growth of highquality
    zno nanowires without a catalyst. Physica B. 2010. 405: 42164218.
•   Suh, D.-I., Byeon, C., Chisu, L. and Chang, L. Synthesis and optical characterization
    of vertically grown zno nanowires in high crystallinity through vapor-liquid-solid growth
    mechanism. Applied Surface Science. 2010. 257: 14541456.
•   Pan Y., C. J., Tsao C. J., Kuo F. C., Chi C. H., Pong G. C., Chang B. J., Norton C. Y.,
    Characterization of zno nanowires grown on si (100) with and without au catalyst.
    Vacuum.
•   Comedi, D., Tirado, M., Zapata, C., Heluani, S. P., Villafuerte, M., Mohseni, P. K. and
    LaPierre, R. R. Randomly oriented zno nanowires grown on amorphous sio2 by
    metal-catalyzed vapour deposition. Journal of Alloys and Compounds. 2010. 495:
    439442.
•   G¨uell, F., Osso, J. O., Go¨ni, A. R., Cornet, A. and Morante, J. R. Synthesis and
    optical spectroscopy of zno nanowires. Superlattices and Microstructures. 2009. 45:
    271–276.
•   Wagner, R. S. and Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth.
    Appl. Phys. Lett.. 1964. 89(4).
•   Wang, N., Cai, Y. and Zhang, R. Growth of nanowires. Materials Science and
    Engineering R. 2008. 60: 151.
                                                                                                24
Thank you

            25
Note on Supersaturation
•   Supersaturation refers to a solution that contains more of the
    dissolved material than could be dissolved by the solvent under
    normal circumstances. It can also refer to a vapor of a compound
    that has a higher (partial) pressure than the vapor pressure of that
    compound.
•   In science, supersaturated is a solution that contains more
    material dissolved in it than the liquid can absorb under normal
    conditions. By heating the liquid, we can increase it absorption
    capacity. The material to be dissolved is called solute while the
    liquid in which the solute is being dissolved is called solvent.
    Suppose water is your solvent while sugar is your solute. You
    dissolve sugar in water slowly till a point comes that the water
    does not dissolve anymore sugar in it and it starts to deposit at
    the bottom of the container, called saturation point. To make the
    solution supersaturated, now heat the solution, you will see that
    the deposited sugar will also dissolve and water will absorb even
    more sugar. This shows that when we heated the solution it
    absorbed more solute than it did under normal conditions to form
    a supersaturated solution.
                                                                      26
Au-Zn Phase Diagram




                      27
Contents


•   INTRODUCTION
•   METHODOLOGY
•   CHARACTERIZATION
•   RESULTS AND DISCUSSION
•   CONCLUSIONS




                             28
INTRODUCTION

Properties of Zinc Oxide
•Direct band gap semiconductor 3.37 eV.
•Large excitation binding energy 60 meV.
•Near UV emission and transparent
conductivity.
•Piezoelectric property resulting from its
non-centrosymetric structure.
•Biosafe and biocompatible.

                                             29
Previous-Current Works

• Basically, previous works on ZnO NWs
  covered randomly orientated samples
  (Abdulgafour et al., Comedi et al.),
  Synthesis (G¨uell et al.) and
  characterization (Chenet et al., Pan et
  al., Suh et al.).
• Current work investigates the effect
  of tilt angle and flow rate on the
  structural properties of ZnO
  nanowires - Not reported before.
                                            30
Crystal Structure of the ZnO
                  ZnO crystallizes in two main
                  forms, hexagonal wurtzite &
                  cubic zincblende
 wurtzite
                   Wurtzite: Most stable at ambient conditions
                   and thus most common




                   Zincblende form can be stabilized by
zincblende         growing ZnO on substrates with cubic
                   lattice structure




                                                                 31
Vapor-Liquid-Solid growth mechanism
                                      T                       liquid
                                                          960°C
                                           Au +                           ZnO+ liquid
• Nucleation of Au catalyst                liquid

                                                          Au + ZnO
• ZnO diffuses into Au (Au/Zn)
                                           Au                                   ZnO
• Eutectic is attained, melting
  point of Au-Zn alloy
                                                                  ZnO
  becomes lower, ∼650 °C
                                                    ZnO
                                                                            ZnO
• Precipitation at 960°C, i.e.
  growth of vertical ZnO begin
  with incoming vapour and           Au         Au/Zn             ZnO

  increase its height. Wisker                    Substrate
  is formed (blue)                Au droplet     Au/Zn- Supersaturation
                                                  alloy      and
                                                                            Nanorod
                                                                           formation
                                               formation precipitation
METHODOLOGY




              33
Characterization




                   34
Experimental Setup
TET




                           35
Thermal Evaporation Techniques
            (TET)




                            36
Experiment

Source Preparation
  2ZnO +    C       Zn   +      CO2,
  ZnO   +   CO           Zn     +       CO2, 
  ZnO   +   (1 – x)CO    ZnOx       +     (1 – x)CO2,   X<1

Growth Parameters
• Catalyst used: Au (gold) nanoparticles.
• Distance between source and substrate.
• Angle between substrate and horizontal axis.
• Flow rate.
• Growth time.
                                                              37
Samples & Variables
Sample Tilt Angle Distance, Flow rate    Furnace      Growth
                   source-   (sccm)     Temperatur   time (hr)
            (°)   substrate                 e
                    (cm)                   (°)



  S1       30        18        1.1         960         1.0

  S2       30        18        3.0         960         1.0

  S3       30        18        3.0         960         1.5

  S4        0        18        3.0         960         1.5

  S5       30        18        5.0         960         1.5


                                                                 38
FESEM & EDAX: Tilt Angle, 30°



                                                                                                                                            FESEM
                                                                                                                                            images




                                                   001
                                          7200

                                          6400                      Si
                                          5600
           001
                                          4800

                                 Counts   4000

                                          3200

                                          2400
                                                              Zn    Au     Au                                             Au        Au
                                          1600           O
                                                             Zn          Au                                                Zn      Zn
                                           800

                                             0
                                                 0.00        1.00    2.00       3.00   4.00   5.00   6.00   7.00   8.00     9.00    10.00
                        1.0 µm
                        1.0 µm
                                                                                               keV




(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at tilt angle 30° and growth time 90 min.
                                                                                                                                                     39
FESEM & EDAX: Tilt Angle, 0°


                                                                                                                                      FESEM
                                                                                                                                      images




                                               002

                                       3300
                                       3000                   Si
                                       2700
         002
                                       2400
                                       2100
                              Counts




                                       1800
                                       1500
                                       1200
                                        900             Zn    Au     Au                                             Au        Au
                                                     O Zn
                                        600                        Au                                                Zn      Zn
                                        300
                                          0
                                              0.00     1.00    2.00       3.00   4.00   5.00   6.00   7.00   8.00     9.00    10.00
                     1.0 µm
                     1.0 µm                                                              keV


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at tilt angle 0° and growth time 90 min.

                                                                                                                                               40
Effect of Substrate Tilt’s Angle


Substrate Zn (Atom   O (Atom   Aspect
 angle, θ    %)         %)      Ratio
   (°)


   0       7.47      11.98      5.5

   30      7.37      12.82      7.7




                                            41
FESEM & EDAX: Flow Rate, 1.1 sccm



                                                                                                                                      FESEM
                                                                                                                                      images




                                                005

                                      15000
                                      13500                     Si

                                      12000
                                      10500
                             Counts




                                       9000
                                       7500
                                       6000
                                                                     Au                                                       Au
                                       4500                    Au
                                                         Zn       Au                                              Au        Pt
                                       3000           O Zn     Pt
                                                                  Pt Pt                                          Pt Zn       Zn
                                       1500
                                          0
                                              0.00      1.00     2.00     3.00   4.00   5.00    6.00   7.00   8.00   9.00     10.00

                                                                                          keV

          005        10 µm
                     10 µm


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 1.1 sccm and growth time 60 min.

                                                                                                                                               42
FESEM & EDAX: Flow Rate, 3.0 sccm




                                                                                                                                           FESEM
                                                                                                                                           images




                                                      004

                                            13500
                                                                      Si
                                            12000

                                            10500

                                            9000
                                   Counts


                                            7500

                                            6000

                                            4500                           Au                                                      Au
                                                               Zn    Au
                                                                        Au                                             Au        Pt
                                            3000                     Pt
                                                            O Zn        Pt Pt                                         Pt Zn       Zn
                                            1500

                                                0
                                                    0.00      1.00     2.00     3.00   4.00   5.00   6.00   7.00   8.00   9.00     10.00

                                                                                               keV

               004         10 µm
                           10 µm


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 3 sccm and growth time 60 min.

                                                                                                                                                43
FESEM & EDAX: Flow Rate, 5.0
               sccm

                                                               FESEM
                                                               images




(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 5 sccm and growth time 90 min.



                                                                        44
Effect of Argon Flow Rate


Ar Flow   Zn (Atom O (Atom Aspect
 Rate        %)       %)    Ratio
(sccm)

  1.1       0.29     1.82     8.6

  3.0       0.82     1.23     4.1

  5.0       1.67     6.05     10.5


                                      45
PL Measurement

Effect of Angle Between Substrate and Horizontal Axis on
the Optical Properties of ZnO Nanowires.




                                                           46
PL Measurement

Effect of Flow Rate on the Optical Properties of
ZnO Nanowires.




  PL results of ZnO nanowires on Si        PL results of ZnO nanowires on
  (a) at flow rate 1.1 sccm, (b) at flow   Si at growth time 90 mints and
  rate 3 sccm and (c) at flow rate 5       flow rate 5 sccm
  sccm.
                                                                            47
CONCLUSION

• ZnO NWs have been successfully grown on Si
  (100) substrate using a hot tube thermal
  evaporation under the substrate tilt angle
  30° and argon flow rate of 5 sccm.
• Improved densities and higher aspect ratio
  were observed.
• Emission properties occurred at a peak
  around 380 nm (Eg = 3.27 eV) over the
  visible region, but could slightly shifted due
  to different processes and contaminations.
                                                   48
Acknowledgement


•UTM for financial assistance under RU
grant (J130000.7126.01H38).
•Member of QuaSR group for the support.
•Everyone involved in assisting and
succeeding the research.



                                          49
References
•   Abdulgafour, H. I., Hassan, Z., Al-Hardan, N. H. and Yam, F. K. Growth of highquality
    zno nanowires without a catalyst. Physica B. 2010. 405: 42164218.
•   Suh, D.-I., Byeon, C., Chisu, L. and Chang, L. Synthesis and optical characterization
    of vertically grown zno nanowires in high crystallinity through vapor-liquid-solid growth
    mechanism. Applied Surface Science. 2010. 257: 14541456.
•   Pan Y., C. J., Tsao C. J., Kuo F. C., Chi C. H., Pong G. C., Chang B. J., Norton C. Y.,
    Characterization of zno nanowires grown on si (100) with and without au catalyst.
    Vacuum.
•   Comedi, D., Tirado, M., Zapata, C., Heluani, S. P., Villafuerte, M., Mohseni, P. K. and
    LaPierre, R. R. Randomly oriented zno nanowires grown on amorphous sio2 by
    metal-catalyzed vapour deposition. Journal of Alloys and Compounds. 2010. 495:
    439442.
•   G¨uell, F., Osso, J. O., Go¨ni, A. R., Cornet, A. and Morante, J. R. Synthesis and
    optical spectroscopy of zno nanowires. Superlattices and Microstructures. 2009. 45:
    271–276.
•   Wagner, R. S. and Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth.
    Appl. Phys. Lett.. 1964. 89(4).
•   Wang, N., Cai, Y. and Zhang, R. Growth of nanowires. Materials Science and
    Engineering R. 2008. 60: 151.
                                                                                                50
Thank you

            51
Note on Supersaturation
•   Supersaturation refers to a solution that contains more of the
    dissolved material than could be dissolved by the solvent under
    normal circumstances. It can also refer to a vapor of a compound
    that has a higher (partial) pressure than the vapor pressure of that
    compound.
•   In science, supersaturated is a solution that contains more
    material dissolved in it than the liquid can absorb under normal
    conditions. By heating the liquid, we can increase it absorption
    capacity. The material to be dissolved is called solute while the
    liquid in which the solute is being dissolved is called solvent.
    Suppose water is your solvent while sugar is your solute. You
    dissolve sugar in water slowly till a point comes that the water
    does not dissolve anymore sugar in it and it starts to deposit at
    the bottom of the container, called saturation point. To make the
    solution supersaturated, now heat the solution, you will see that
    the deposited sugar will also dissolve and water will absorb even
    more sugar. This shows that when we heated the solution it
    absorbed more solute than it did under normal conditions to form
    a supersaturated solution.
                                                                      52
Au-Zn Phase Diagram




                      53
Contents


•   INTRODUCTION
•   METHODOLOGY
•   CHARACTERIZATION
•   RESULTS AND DISCUSSION
•   CONCLUSIONS




                             54
INTRODUCTION

Properties of Zinc Oxide
•Direct band gap semiconductor 3.37 eV.
•Large excitation binding energy 60 meV.
•Near UV emission and transparent
conductivity.
•Piezoelectric property resulting from its
non-centrosymetric structure.
•Biosafe and biocompatible.

                                             55
Previous-Current Works

• Basically, previous works on ZnO NWs
  covered randomly orientated samples
  (Abdulgafour et al., Comedi et al.),
  Synthesis (G¨uell et al.) and
  characterization (Chenet et al., Pan et
  al., Suh et al.).
• Current work investigates the effect
  of tilt angle and flow rate on the
  structural properties of ZnO
  nanowires - Not reported before.
                                            56
Crystal Structure of the ZnO
                  ZnO crystallizes in two main
                  forms, hexagonal wurtzite &
                  cubic zincblende
 wurtzite
                   Wurtzite: Most stable at ambient conditions
                   and thus most common




                   Zincblende form can be stabilized by
zincblende         growing ZnO on substrates with cubic
                   lattice structure




                                                                 57
Vapor-Liquid-Solid growth mechanism
                                      T                       liquid
                                                          960°C
                                           Au +                           ZnO+ liquid
• Nucleation of Au catalyst                liquid

                                                          Au + ZnO
• ZnO diffuses into Au (Au/Zn)
                                           Au                                   ZnO
• Eutectic is attained, melting
  point of Au-Zn alloy
                                                                  ZnO
  becomes lower, ∼650 °C
                                                    ZnO
                                                                            ZnO
• Precipitation at 960°C, i.e.
  growth of vertical ZnO begin
  with incoming vapour and           Au         Au/Zn             ZnO

  increase its height. Wisker                    Substrate
  is formed (blue)                Au droplet     Au/Zn- Supersaturation
                                                  alloy      and
                                                                            Nanorod
                                                                           formation
                                               formation precipitation
METHODOLOGY




              59
Characterization




                   60
Experimental Setup
TET




                           61
Thermal Evaporation Techniques
            (TET)




                            62
Experiment

Source Preparation
  2ZnO +    C       Zn   +      CO2,
  ZnO   +   CO           Zn     +       CO2, 
  ZnO   +   (1 – x)CO    ZnOx       +     (1 – x)CO2,   X<1

Growth Parameters
• Catalyst used: Au (gold) nanoparticles.
• Distance between source and substrate.
• Angle between substrate and horizontal axis.
• Flow rate.
• Growth time.
                                                              63
Samples & Variables
Sample Tilt Angle Distance, Flow rate    Furnace      Growth
                   source-   (sccm)     Temperatur   time (hr)
            (°)   substrate                 e
                    (cm)                   (°)



  S1       30        18        1.1         960         1.0

  S2       30        18        3.0         960         1.0

  S3       30        18        3.0         960         1.5

  S4        0        18        3.0         960         1.5

  S5       30        18        5.0         960         1.5


                                                                 64
FESEM & EDAX: Tilt Angle, 30°



                                                                                                                                            FESEM
                                                                                                                                            images




                                                   001
                                          7200

                                          6400                      Si
                                          5600
           001
                                          4800

                                 Counts   4000

                                          3200

                                          2400
                                                              Zn    Au     Au                                             Au        Au
                                          1600           O
                                                             Zn          Au                                                Zn      Zn
                                           800

                                             0
                                                 0.00        1.00    2.00       3.00   4.00   5.00   6.00   7.00   8.00     9.00    10.00
                        1.0 µm
                        1.0 µm
                                                                                               keV




(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at tilt angle 30° and growth time 90 min.
                                                                                                                                                     65
FESEM & EDAX: Tilt Angle, 0°


                                                                                                                                      FESEM
                                                                                                                                      images




                                               002

                                       3300
                                       3000                   Si
                                       2700
         002
                                       2400
                                       2100
                              Counts




                                       1800
                                       1500
                                       1200
                                        900             Zn    Au     Au                                             Au        Au
                                                     O Zn
                                        600                        Au                                                Zn      Zn
                                        300
                                          0
                                              0.00     1.00    2.00       3.00   4.00   5.00   6.00   7.00   8.00     9.00    10.00
                     1.0 µm
                     1.0 µm                                                              keV


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at tilt angle 0° and growth time 90 min.

                                                                                                                                               66
Effect of Substrate Tilt’s Angle


Substrate Zn (Atom   O (Atom   Aspect
 angle, θ    %)         %)      Ratio
   (°)


   0       7.47      11.98      5.5

   30      7.37      12.82      7.7




                                            67
FESEM & EDAX: Flow Rate, 1.1 sccm



                                                                                                                                      FESEM
                                                                                                                                      images




                                                005

                                      15000
                                      13500                     Si

                                      12000
                                      10500
                             Counts




                                       9000
                                       7500
                                       6000
                                                                     Au                                                       Au
                                       4500                    Au
                                                         Zn       Au                                              Au        Pt
                                       3000           O Zn     Pt
                                                                  Pt Pt                                          Pt Zn       Zn
                                       1500
                                          0
                                              0.00      1.00     2.00     3.00   4.00   5.00    6.00   7.00   8.00   9.00     10.00

                                                                                          keV

          005        10 µm
                     10 µm


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 1.1 sccm and growth time 60 min.

                                                                                                                                               68
FESEM & EDAX: Flow Rate, 3.0 sccm




                                                                                                                                           FESEM
                                                                                                                                           images




                                                      004

                                            13500
                                                                      Si
                                            12000

                                            10500

                                            9000
                                   Counts


                                            7500

                                            6000

                                            4500                           Au                                                      Au
                                                               Zn    Au
                                                                        Au                                             Au        Pt
                                            3000                     Pt
                                                            O Zn        Pt Pt                                         Pt Zn       Zn
                                            1500

                                                0
                                                    0.00      1.00     2.00     3.00   4.00   5.00   6.00   7.00   8.00   9.00     10.00

                                                                                               keV

               004         10 µm
                           10 µm


(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 3 sccm and growth time 60 min.

                                                                                                                                                69
FESEM & EDAX: Flow Rate, 5.0
               sccm

                                                               FESEM
                                                               images




(a) Detection position of EDX spectra, and (b) EDX spectra of ZnO
nanowires on Si at flow rate 5 sccm and growth time 90 min.



                                                                        70
Effect of Argon Flow Rate


Ar Flow   Zn (Atom O (Atom Aspect
 Rate        %)       %)    Ratio
(sccm)

  1.1       0.29     1.82     8.6

  3.0       0.82     1.23     4.1

  5.0       1.67     6.05     10.5


                                      71
PL Measurement

Effect of Angle Between Substrate and Horizontal Axis on
the Optical Properties of ZnO Nanowires.




                                                           72
PL Measurement

Effect of Flow Rate on the Optical Properties of
ZnO Nanowires.




  PL results of ZnO nanowires on Si        PL results of ZnO nanowires on
  (a) at flow rate 1.1 sccm, (b) at flow   Si at growth time 90 mints and
  rate 3 sccm and (c) at flow rate 5       flow rate 5 sccm
  sccm.
                                                                            73
CONCLUSION

• ZnO NWs have been successfully grown on Si
  (100) substrate using a hot tube thermal
  evaporation under the substrate tilt angle
  30° and argon flow rate of 5 sccm.
• Improved densities and higher aspect ratio
  were observed.
• Emission properties occurred at a peak
  around 380 nm (Eg = 3.27 eV) over the
  visible region, but could slightly shifted due
  to different processes and contaminations.
                                                   74
Acknowledgement


•UTM for financial assistance under RU
grant (J130000.7126.01H38).
•Member of QuaSR group for the support.
•Everyone involved in assisting and
succeeding the research.



                                          75
References
•   Abdulgafour, H. I., Hassan, Z., Al-Hardan, N. H. and Yam, F. K. Growth of highquality
    zno nanowires without a catalyst. Physica B. 2010. 405: 42164218.
•   Suh, D.-I., Byeon, C., Chisu, L. and Chang, L. Synthesis and optical characterization
    of vertically grown zno nanowires in high crystallinity through vapor-liquid-solid growth
    mechanism. Applied Surface Science. 2010. 257: 14541456.
•   Pan Y., C. J., Tsao C. J., Kuo F. C., Chi C. H., Pong G. C., Chang B. J., Norton C. Y.,
    Characterization of zno nanowires grown on si (100) with and without au catalyst.
    Vacuum.
•   Comedi, D., Tirado, M., Zapata, C., Heluani, S. P., Villafuerte, M., Mohseni, P. K. and
    LaPierre, R. R. Randomly oriented zno nanowires grown on amorphous sio2 by
    metal-catalyzed vapour deposition. Journal of Alloys and Compounds. 2010. 495:
    439442.
•   G¨uell, F., Osso, J. O., Go¨ni, A. R., Cornet, A. and Morante, J. R. Synthesis and
    optical spectroscopy of zno nanowires. Superlattices and Microstructures. 2009. 45:
    271–276.
•   Wagner, R. S. and Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth.
    Appl. Phys. Lett.. 1964. 89(4).
•   Wang, N., Cai, Y. and Zhang, R. Growth of nanowires. Materials Science and
    Engineering R. 2008. 60: 151.
                                                                                                76
Thank you

            77
Note on Supersaturation
•   Supersaturation refers to a solution that contains more of the
    dissolved material than could be dissolved by the solvent under
    normal circumstances. It can also refer to a vapor of a compound
    that has a higher (partial) pressure than the vapor pressure of that
    compound.
•   In science, supersaturated is a solution that contains more
    material dissolved in it than the liquid can absorb under normal
    conditions. By heating the liquid, we can increase it absorption
    capacity. The material to be dissolved is called solute while the
    liquid in which the solute is being dissolved is called solvent.
    Suppose water is your solvent while sugar is your solute. You
    dissolve sugar in water slowly till a point comes that the water
    does not dissolve anymore sugar in it and it starts to deposit at
    the bottom of the container, called saturation point. To make the
    solution supersaturated, now heat the solution, you will see that
    the deposited sugar will also dissolve and water will absorb even
    more sugar. This shows that when we heated the solution it
    absorbed more solute than it did under normal conditions to form
    a supersaturated solution.
                                                                      78
Au-Zn Phase Diagram




                      79

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Zinc Oxide Nanowires Prepared by Hot Tube Thermal Evaporation

  • 1. Zinc Oxide Nanowires Synthesized using a Hot Tube Thermal Evaporation under Intermediate Heating Period Samsudi Sakrani, Peshawa Omer Amin, Syahida Suhaimi December 2012
  • 2. Contents • INTRODUCTION • METHODOLOGY • CHARACTERIZATION • RESULTS AND DISCUSSION • CONCLUSIONS 2
  • 3. INTRODUCTION Properties of Zinc Oxide •Direct band gap semiconductor 3.37 eV. •Large excitation binding energy 60 meV. •Near UV emission and transparent conductivity. •Piezoelectric property resulting from its non-centrosymetric structure. •Biosafe and biocompatible. 3
  • 4. Previous-Current Works • Basically, previous works on ZnO NWs covered randomly orientated samples (Abdulgafour et al., Comedi et al.), Synthesis (G¨uell et al.) and characterization (Chenet et al., Pan et al., Suh et al.). • Current work investigates the effect of tilt angle and flow rate on the structural properties of ZnO nanowires - Not reported before. 4
  • 5. Crystal Structure of the ZnO ZnO crystallizes in two main forms, hexagonal wurtzite & cubic zincblende wurtzite Wurtzite: Most stable at ambient conditions and thus most common Zincblende form can be stabilized by zincblende growing ZnO on substrates with cubic lattice structure 5
  • 6. Vapor-Liquid-Solid growth mechanism T liquid 960°C Au + ZnO+ liquid • Nucleation of Au catalyst liquid Au + ZnO • ZnO diffuses into Au (Au/Zn) Au ZnO • Eutectic is attained, melting point of Au-Zn alloy ZnO becomes lower, ∼650 °C ZnO ZnO • Precipitation at 960°C, i.e. growth of vertical ZnO begin Au Au/Zn ZnO with incoming vapour and Substrate increase its height. Wisker Au droplet Au/Zn- Supersaturation Nanorod alloy is formed (blue) and formation precipitation formation
  • 11. Experiment Source Preparation 2ZnO + C Zn + CO2, ZnO + CO Zn + CO2,  ZnO + (1 – x)CO ZnOx + (1 – x)CO2, X<1 Growth Parameters • Catalyst used: Au (gold) nanoparticles. • Distance between source and substrate. • Angle between substrate and horizontal axis. • Flow rate. • Growth time. 11
  • 12. Samples & Variables Sample Tilt Angle Distance, Flow rate Furnace Growth source- (sccm) Temperatur time (hr) (°) substrate e (cm) (°) S1 30 18 1.1 960 1.0 S2 30 18 3.0 960 1.0 S3 30 18 3.0 960 1.5 S4 0 18 3.0 960 1.5 S5 30 18 5.0 960 1.5 12
  • 13. FESEM & EDAX: Tilt Angle, 30° FESEM images 001 7200 6400 Si 5600 001 4800 Counts 4000 3200 2400 Zn Au Au Au Au 1600 O Zn Au Zn Zn 800 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 1.0 µm 1.0 µm keV (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at tilt angle 30° and growth time 90 min. 13
  • 14. FESEM & EDAX: Tilt Angle, 0° FESEM images 002 3300 3000 Si 2700 002 2400 2100 Counts 1800 1500 1200 900 Zn Au Au Au Au O Zn 600 Au Zn Zn 300 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 1.0 µm 1.0 µm keV (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at tilt angle 0° and growth time 90 min. 14
  • 15. Effect of Substrate Tilt’s Angle Substrate Zn (Atom O (Atom Aspect angle, θ %) %) Ratio (°) 0 7.47 11.98 5.5 30 7.37 12.82 7.7 15
  • 16. FESEM & EDAX: Flow Rate, 1.1 sccm FESEM images 005 15000 13500 Si 12000 10500 Counts 9000 7500 6000 Au Au 4500 Au Zn Au Au Pt 3000 O Zn Pt Pt Pt Pt Zn Zn 1500 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 keV 005 10 µm 10 µm (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 1.1 sccm and growth time 60 min. 16
  • 17. FESEM & EDAX: Flow Rate, 3.0 sccm FESEM images 004 13500 Si 12000 10500 9000 Counts 7500 6000 4500 Au Au Zn Au Au Au Pt 3000 Pt O Zn Pt Pt Pt Zn Zn 1500 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 keV 004 10 µm 10 µm (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 3 sccm and growth time 60 min. 17
  • 18. FESEM & EDAX: Flow Rate, 5.0 sccm FESEM images (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 5 sccm and growth time 90 min. 18
  • 19. Effect of Argon Flow Rate Ar Flow Zn (Atom O (Atom Aspect Rate %) %) Ratio (sccm) 1.1 0.29 1.82 8.6 3.0 0.82 1.23 4.1 5.0 1.67 6.05 10.5 19
  • 20. PL Measurement Effect of Angle Between Substrate and Horizontal Axis on the Optical Properties of ZnO Nanowires. 20
  • 21. PL Measurement Effect of Flow Rate on the Optical Properties of ZnO Nanowires. PL results of ZnO nanowires on Si PL results of ZnO nanowires on (a) at flow rate 1.1 sccm, (b) at flow Si at growth time 90 mints and rate 3 sccm and (c) at flow rate 5 flow rate 5 sccm sccm. 21
  • 22. CONCLUSION • ZnO NWs have been successfully grown on Si (100) substrate using a hot tube thermal evaporation under the substrate tilt angle 30° and argon flow rate of 5 sccm. • Improved densities and higher aspect ratio were observed. • Emission properties occurred at a peak around 380 nm (Eg = 3.27 eV) over the visible region, but could slightly shifted due to different processes and contaminations. 22
  • 23. Acknowledgement •UTM for financial assistance under RU grant (J130000.7126.01H38). •Member of QuaSR group for the support. •Everyone involved in assisting and succeeding the research. 23
  • 24. References • Abdulgafour, H. I., Hassan, Z., Al-Hardan, N. H. and Yam, F. K. Growth of highquality zno nanowires without a catalyst. Physica B. 2010. 405: 42164218. • Suh, D.-I., Byeon, C., Chisu, L. and Chang, L. Synthesis and optical characterization of vertically grown zno nanowires in high crystallinity through vapor-liquid-solid growth mechanism. Applied Surface Science. 2010. 257: 14541456. • Pan Y., C. J., Tsao C. J., Kuo F. C., Chi C. H., Pong G. C., Chang B. J., Norton C. Y., Characterization of zno nanowires grown on si (100) with and without au catalyst. Vacuum. • Comedi, D., Tirado, M., Zapata, C., Heluani, S. P., Villafuerte, M., Mohseni, P. K. and LaPierre, R. R. Randomly oriented zno nanowires grown on amorphous sio2 by metal-catalyzed vapour deposition. Journal of Alloys and Compounds. 2010. 495: 439442. • G¨uell, F., Osso, J. O., Go¨ni, A. R., Cornet, A. and Morante, J. R. Synthesis and optical spectroscopy of zno nanowires. Superlattices and Microstructures. 2009. 45: 271–276. • Wagner, R. S. and Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett.. 1964. 89(4). • Wang, N., Cai, Y. and Zhang, R. Growth of nanowires. Materials Science and Engineering R. 2008. 60: 151. 24
  • 25. Thank you 25
  • 26. Note on Supersaturation • Supersaturation refers to a solution that contains more of the dissolved material than could be dissolved by the solvent under normal circumstances. It can also refer to a vapor of a compound that has a higher (partial) pressure than the vapor pressure of that compound. • In science, supersaturated is a solution that contains more material dissolved in it than the liquid can absorb under normal conditions. By heating the liquid, we can increase it absorption capacity. The material to be dissolved is called solute while the liquid in which the solute is being dissolved is called solvent. Suppose water is your solvent while sugar is your solute. You dissolve sugar in water slowly till a point comes that the water does not dissolve anymore sugar in it and it starts to deposit at the bottom of the container, called saturation point. To make the solution supersaturated, now heat the solution, you will see that the deposited sugar will also dissolve and water will absorb even more sugar. This shows that when we heated the solution it absorbed more solute than it did under normal conditions to form a supersaturated solution. 26
  • 28. Contents • INTRODUCTION • METHODOLOGY • CHARACTERIZATION • RESULTS AND DISCUSSION • CONCLUSIONS 28
  • 29. INTRODUCTION Properties of Zinc Oxide •Direct band gap semiconductor 3.37 eV. •Large excitation binding energy 60 meV. •Near UV emission and transparent conductivity. •Piezoelectric property resulting from its non-centrosymetric structure. •Biosafe and biocompatible. 29
  • 30. Previous-Current Works • Basically, previous works on ZnO NWs covered randomly orientated samples (Abdulgafour et al., Comedi et al.), Synthesis (G¨uell et al.) and characterization (Chenet et al., Pan et al., Suh et al.). • Current work investigates the effect of tilt angle and flow rate on the structural properties of ZnO nanowires - Not reported before. 30
  • 31. Crystal Structure of the ZnO ZnO crystallizes in two main forms, hexagonal wurtzite & cubic zincblende wurtzite Wurtzite: Most stable at ambient conditions and thus most common Zincblende form can be stabilized by zincblende growing ZnO on substrates with cubic lattice structure 31
  • 32. Vapor-Liquid-Solid growth mechanism T liquid 960°C Au + ZnO+ liquid • Nucleation of Au catalyst liquid Au + ZnO • ZnO diffuses into Au (Au/Zn) Au ZnO • Eutectic is attained, melting point of Au-Zn alloy ZnO becomes lower, ∼650 °C ZnO ZnO • Precipitation at 960°C, i.e. growth of vertical ZnO begin with incoming vapour and Au Au/Zn ZnO increase its height. Wisker Substrate is formed (blue) Au droplet Au/Zn- Supersaturation alloy and Nanorod formation formation precipitation
  • 37. Experiment Source Preparation 2ZnO + C Zn + CO2, ZnO + CO Zn + CO2,  ZnO + (1 – x)CO ZnOx + (1 – x)CO2, X<1 Growth Parameters • Catalyst used: Au (gold) nanoparticles. • Distance between source and substrate. • Angle between substrate and horizontal axis. • Flow rate. • Growth time. 37
  • 38. Samples & Variables Sample Tilt Angle Distance, Flow rate Furnace Growth source- (sccm) Temperatur time (hr) (°) substrate e (cm) (°) S1 30 18 1.1 960 1.0 S2 30 18 3.0 960 1.0 S3 30 18 3.0 960 1.5 S4 0 18 3.0 960 1.5 S5 30 18 5.0 960 1.5 38
  • 39. FESEM & EDAX: Tilt Angle, 30° FESEM images 001 7200 6400 Si 5600 001 4800 Counts 4000 3200 2400 Zn Au Au Au Au 1600 O Zn Au Zn Zn 800 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 1.0 µm 1.0 µm keV (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at tilt angle 30° and growth time 90 min. 39
  • 40. FESEM & EDAX: Tilt Angle, 0° FESEM images 002 3300 3000 Si 2700 002 2400 2100 Counts 1800 1500 1200 900 Zn Au Au Au Au O Zn 600 Au Zn Zn 300 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 1.0 µm 1.0 µm keV (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at tilt angle 0° and growth time 90 min. 40
  • 41. Effect of Substrate Tilt’s Angle Substrate Zn (Atom O (Atom Aspect angle, θ %) %) Ratio (°) 0 7.47 11.98 5.5 30 7.37 12.82 7.7 41
  • 42. FESEM & EDAX: Flow Rate, 1.1 sccm FESEM images 005 15000 13500 Si 12000 10500 Counts 9000 7500 6000 Au Au 4500 Au Zn Au Au Pt 3000 O Zn Pt Pt Pt Pt Zn Zn 1500 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 keV 005 10 µm 10 µm (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 1.1 sccm and growth time 60 min. 42
  • 43. FESEM & EDAX: Flow Rate, 3.0 sccm FESEM images 004 13500 Si 12000 10500 9000 Counts 7500 6000 4500 Au Au Zn Au Au Au Pt 3000 Pt O Zn Pt Pt Pt Zn Zn 1500 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 keV 004 10 µm 10 µm (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 3 sccm and growth time 60 min. 43
  • 44. FESEM & EDAX: Flow Rate, 5.0 sccm FESEM images (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 5 sccm and growth time 90 min. 44
  • 45. Effect of Argon Flow Rate Ar Flow Zn (Atom O (Atom Aspect Rate %) %) Ratio (sccm) 1.1 0.29 1.82 8.6 3.0 0.82 1.23 4.1 5.0 1.67 6.05 10.5 45
  • 46. PL Measurement Effect of Angle Between Substrate and Horizontal Axis on the Optical Properties of ZnO Nanowires. 46
  • 47. PL Measurement Effect of Flow Rate on the Optical Properties of ZnO Nanowires. PL results of ZnO nanowires on Si PL results of ZnO nanowires on (a) at flow rate 1.1 sccm, (b) at flow Si at growth time 90 mints and rate 3 sccm and (c) at flow rate 5 flow rate 5 sccm sccm. 47
  • 48. CONCLUSION • ZnO NWs have been successfully grown on Si (100) substrate using a hot tube thermal evaporation under the substrate tilt angle 30° and argon flow rate of 5 sccm. • Improved densities and higher aspect ratio were observed. • Emission properties occurred at a peak around 380 nm (Eg = 3.27 eV) over the visible region, but could slightly shifted due to different processes and contaminations. 48
  • 49. Acknowledgement •UTM for financial assistance under RU grant (J130000.7126.01H38). •Member of QuaSR group for the support. •Everyone involved in assisting and succeeding the research. 49
  • 50. References • Abdulgafour, H. I., Hassan, Z., Al-Hardan, N. H. and Yam, F. K. Growth of highquality zno nanowires without a catalyst. Physica B. 2010. 405: 42164218. • Suh, D.-I., Byeon, C., Chisu, L. and Chang, L. Synthesis and optical characterization of vertically grown zno nanowires in high crystallinity through vapor-liquid-solid growth mechanism. Applied Surface Science. 2010. 257: 14541456. • Pan Y., C. J., Tsao C. J., Kuo F. C., Chi C. H., Pong G. C., Chang B. J., Norton C. Y., Characterization of zno nanowires grown on si (100) with and without au catalyst. Vacuum. • Comedi, D., Tirado, M., Zapata, C., Heluani, S. P., Villafuerte, M., Mohseni, P. K. and LaPierre, R. R. Randomly oriented zno nanowires grown on amorphous sio2 by metal-catalyzed vapour deposition. Journal of Alloys and Compounds. 2010. 495: 439442. • G¨uell, F., Osso, J. O., Go¨ni, A. R., Cornet, A. and Morante, J. R. Synthesis and optical spectroscopy of zno nanowires. Superlattices and Microstructures. 2009. 45: 271–276. • Wagner, R. S. and Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett.. 1964. 89(4). • Wang, N., Cai, Y. and Zhang, R. Growth of nanowires. Materials Science and Engineering R. 2008. 60: 151. 50
  • 51. Thank you 51
  • 52. Note on Supersaturation • Supersaturation refers to a solution that contains more of the dissolved material than could be dissolved by the solvent under normal circumstances. It can also refer to a vapor of a compound that has a higher (partial) pressure than the vapor pressure of that compound. • In science, supersaturated is a solution that contains more material dissolved in it than the liquid can absorb under normal conditions. By heating the liquid, we can increase it absorption capacity. The material to be dissolved is called solute while the liquid in which the solute is being dissolved is called solvent. Suppose water is your solvent while sugar is your solute. You dissolve sugar in water slowly till a point comes that the water does not dissolve anymore sugar in it and it starts to deposit at the bottom of the container, called saturation point. To make the solution supersaturated, now heat the solution, you will see that the deposited sugar will also dissolve and water will absorb even more sugar. This shows that when we heated the solution it absorbed more solute than it did under normal conditions to form a supersaturated solution. 52
  • 54. Contents • INTRODUCTION • METHODOLOGY • CHARACTERIZATION • RESULTS AND DISCUSSION • CONCLUSIONS 54
  • 55. INTRODUCTION Properties of Zinc Oxide •Direct band gap semiconductor 3.37 eV. •Large excitation binding energy 60 meV. •Near UV emission and transparent conductivity. •Piezoelectric property resulting from its non-centrosymetric structure. •Biosafe and biocompatible. 55
  • 56. Previous-Current Works • Basically, previous works on ZnO NWs covered randomly orientated samples (Abdulgafour et al., Comedi et al.), Synthesis (G¨uell et al.) and characterization (Chenet et al., Pan et al., Suh et al.). • Current work investigates the effect of tilt angle and flow rate on the structural properties of ZnO nanowires - Not reported before. 56
  • 57. Crystal Structure of the ZnO ZnO crystallizes in two main forms, hexagonal wurtzite & cubic zincblende wurtzite Wurtzite: Most stable at ambient conditions and thus most common Zincblende form can be stabilized by zincblende growing ZnO on substrates with cubic lattice structure 57
  • 58. Vapor-Liquid-Solid growth mechanism T liquid 960°C Au + ZnO+ liquid • Nucleation of Au catalyst liquid Au + ZnO • ZnO diffuses into Au (Au/Zn) Au ZnO • Eutectic is attained, melting point of Au-Zn alloy ZnO becomes lower, ∼650 °C ZnO ZnO • Precipitation at 960°C, i.e. growth of vertical ZnO begin with incoming vapour and Au Au/Zn ZnO increase its height. Wisker Substrate is formed (blue) Au droplet Au/Zn- Supersaturation alloy and Nanorod formation formation precipitation
  • 63. Experiment Source Preparation 2ZnO + C Zn + CO2, ZnO + CO Zn + CO2,  ZnO + (1 – x)CO ZnOx + (1 – x)CO2, X<1 Growth Parameters • Catalyst used: Au (gold) nanoparticles. • Distance between source and substrate. • Angle between substrate and horizontal axis. • Flow rate. • Growth time. 63
  • 64. Samples & Variables Sample Tilt Angle Distance, Flow rate Furnace Growth source- (sccm) Temperatur time (hr) (°) substrate e (cm) (°) S1 30 18 1.1 960 1.0 S2 30 18 3.0 960 1.0 S3 30 18 3.0 960 1.5 S4 0 18 3.0 960 1.5 S5 30 18 5.0 960 1.5 64
  • 65. FESEM & EDAX: Tilt Angle, 30° FESEM images 001 7200 6400 Si 5600 001 4800 Counts 4000 3200 2400 Zn Au Au Au Au 1600 O Zn Au Zn Zn 800 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 1.0 µm 1.0 µm keV (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at tilt angle 30° and growth time 90 min. 65
  • 66. FESEM & EDAX: Tilt Angle, 0° FESEM images 002 3300 3000 Si 2700 002 2400 2100 Counts 1800 1500 1200 900 Zn Au Au Au Au O Zn 600 Au Zn Zn 300 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 1.0 µm 1.0 µm keV (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at tilt angle 0° and growth time 90 min. 66
  • 67. Effect of Substrate Tilt’s Angle Substrate Zn (Atom O (Atom Aspect angle, θ %) %) Ratio (°) 0 7.47 11.98 5.5 30 7.37 12.82 7.7 67
  • 68. FESEM & EDAX: Flow Rate, 1.1 sccm FESEM images 005 15000 13500 Si 12000 10500 Counts 9000 7500 6000 Au Au 4500 Au Zn Au Au Pt 3000 O Zn Pt Pt Pt Pt Zn Zn 1500 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 keV 005 10 µm 10 µm (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 1.1 sccm and growth time 60 min. 68
  • 69. FESEM & EDAX: Flow Rate, 3.0 sccm FESEM images 004 13500 Si 12000 10500 9000 Counts 7500 6000 4500 Au Au Zn Au Au Au Pt 3000 Pt O Zn Pt Pt Pt Zn Zn 1500 0 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 keV 004 10 µm 10 µm (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 3 sccm and growth time 60 min. 69
  • 70. FESEM & EDAX: Flow Rate, 5.0 sccm FESEM images (a) Detection position of EDX spectra, and (b) EDX spectra of ZnO nanowires on Si at flow rate 5 sccm and growth time 90 min. 70
  • 71. Effect of Argon Flow Rate Ar Flow Zn (Atom O (Atom Aspect Rate %) %) Ratio (sccm) 1.1 0.29 1.82 8.6 3.0 0.82 1.23 4.1 5.0 1.67 6.05 10.5 71
  • 72. PL Measurement Effect of Angle Between Substrate and Horizontal Axis on the Optical Properties of ZnO Nanowires. 72
  • 73. PL Measurement Effect of Flow Rate on the Optical Properties of ZnO Nanowires. PL results of ZnO nanowires on Si PL results of ZnO nanowires on (a) at flow rate 1.1 sccm, (b) at flow Si at growth time 90 mints and rate 3 sccm and (c) at flow rate 5 flow rate 5 sccm sccm. 73
  • 74. CONCLUSION • ZnO NWs have been successfully grown on Si (100) substrate using a hot tube thermal evaporation under the substrate tilt angle 30° and argon flow rate of 5 sccm. • Improved densities and higher aspect ratio were observed. • Emission properties occurred at a peak around 380 nm (Eg = 3.27 eV) over the visible region, but could slightly shifted due to different processes and contaminations. 74
  • 75. Acknowledgement •UTM for financial assistance under RU grant (J130000.7126.01H38). •Member of QuaSR group for the support. •Everyone involved in assisting and succeeding the research. 75
  • 76. References • Abdulgafour, H. I., Hassan, Z., Al-Hardan, N. H. and Yam, F. K. Growth of highquality zno nanowires without a catalyst. Physica B. 2010. 405: 42164218. • Suh, D.-I., Byeon, C., Chisu, L. and Chang, L. Synthesis and optical characterization of vertically grown zno nanowires in high crystallinity through vapor-liquid-solid growth mechanism. Applied Surface Science. 2010. 257: 14541456. • Pan Y., C. J., Tsao C. J., Kuo F. C., Chi C. H., Pong G. C., Chang B. J., Norton C. Y., Characterization of zno nanowires grown on si (100) with and without au catalyst. Vacuum. • Comedi, D., Tirado, M., Zapata, C., Heluani, S. P., Villafuerte, M., Mohseni, P. K. and LaPierre, R. R. Randomly oriented zno nanowires grown on amorphous sio2 by metal-catalyzed vapour deposition. Journal of Alloys and Compounds. 2010. 495: 439442. • G¨uell, F., Osso, J. O., Go¨ni, A. R., Cornet, A. and Morante, J. R. Synthesis and optical spectroscopy of zno nanowires. Superlattices and Microstructures. 2009. 45: 271–276. • Wagner, R. S. and Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett.. 1964. 89(4). • Wang, N., Cai, Y. and Zhang, R. Growth of nanowires. Materials Science and Engineering R. 2008. 60: 151. 76
  • 77. Thank you 77
  • 78. Note on Supersaturation • Supersaturation refers to a solution that contains more of the dissolved material than could be dissolved by the solvent under normal circumstances. It can also refer to a vapor of a compound that has a higher (partial) pressure than the vapor pressure of that compound. • In science, supersaturated is a solution that contains more material dissolved in it than the liquid can absorb under normal conditions. By heating the liquid, we can increase it absorption capacity. The material to be dissolved is called solute while the liquid in which the solute is being dissolved is called solvent. Suppose water is your solvent while sugar is your solute. You dissolve sugar in water slowly till a point comes that the water does not dissolve anymore sugar in it and it starts to deposit at the bottom of the container, called saturation point. To make the solution supersaturated, now heat the solution, you will see that the deposited sugar will also dissolve and water will absorb even more sugar. This shows that when we heated the solution it absorbed more solute than it did under normal conditions to form a supersaturated solution. 78