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BC548 / BC548A / BC548B / BC548C

BC548
BC548A
BC548B
BC548C

E

B

TO-92
C

NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100A for characteristics.

Absolute Maximum Ratings*
Symbol

TA = 25°C unless otherwise noted

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

30

V

VCES

Collector-Base Voltage

30

V

VEBO

Emitter-Base Voltage

5.0

V

IC

Collector Current - Continuous

500

mA

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD

TA = 25°C unless otherwise noted

Characteristic

RθJC

Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case

RθJA

Thermal Resistance, Junction to Ambient

© 1997 Fairchild Semiconductor Corporation

Max

Units

BC548 / A / B / C
625
5.0
83.3

mW
mW/°C
°C/W

200

°C/W

548-ABC, Rev B
(continued)

Electrical Characteristics
Symbol

TA = 25°C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage

IC = 10 mA, IB = 0

30

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 10 µA, IE = 0

30

V

V(BR)CES

Collector-Base Breakdown Voltage

IC = 10 µA, IE = 0

30

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 µA, IC = 0

5.0

V

ICBO

Collector Cutoff Current

VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = +150 °C

15
5.0

nA
µA

800
220
450
800
0.25
0.60
0.70
0.77

V
V
V
V

ON CHARACTERISTICS
hFE

DC Current Gain

VCE = 5.0 V, IC = 2.0 mA

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5.0 mA
VCE = 5.0 V, IC = 2.0 mA
VCE = 5.0 V, IC = 10 mA

548
548A
548B
548C

110
110
200
420

0.58

SMALL SIGNAL CHARACTERISTICS
hfe

Small-Signal Current Gain

NF

Noise Figure

IC = 2.0 mA, VCE = 5.0 V,
f = 1.0 kHz
VCE = 5.0 V, IC = 200 µA,
RS = 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz

125

900
10

dB

BC548 / BC548A / BC548B / BC548C

NPN General Purpose Amplifier
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 

FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™

PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G

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BC548/BC548A/BC548B/BC548C Transistor data sheet

  • 1. BC548 / BC548A / BC548B / BC548C BC548 BC548A BC548B BC548C E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCES Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient © 1997 Fairchild Semiconductor Corporation Max Units BC548 / A / B / C 625 5.0 83.3 mW mW/°C °C/W 200 °C/W 548-ABC, Rev B
  • 2. (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 30 V V(BR)CES Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = +150 °C 15 5.0 nA µA 800 220 450 800 0.25 0.60 0.70 0.77 V V V V ON CHARACTERISTICS hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA VCE = 5.0 V, IC = 2.0 mA VCE = 5.0 V, IC = 10 mA 548 548A 548B 548C 110 110 200 420 0.58 SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain NF Noise Figure IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz VCE = 5.0 V, IC = 200 µA, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz 125 900 10 dB BC548 / BC548A / BC548B / BC548C NPN General Purpose Amplifier
  • 3. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G