5th Semester Electronic and Communication Engineering (June/July-2015) Question Papers

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2 a. Give any four important reasons for the perfotmance of planning functions.
b. Difference between strategic planning and tactical planning.
c. What is decision making? Explain different types ofdecisions.
3a.
b.
c.
Define an organ tzationand explain principles pjgruurisation.
Write a brief note on the following : i) MB fl ii) MBE.
a. Briefly explain the purpose of communication.
b. Briefly explain the essentials of a sound control system.
c. Explain Maslow's and Heryburg theories of Human motivation.
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PART - B
a. Who is an Enterpieniiur? Explain the characteristics of an Enterpreneur.
b. Explain the role of an Enterpreneur in economic development of any country.
c. Explain the barrier involved in entrepreneurship.
a. What is'Small Scale lndustry? Briefly explain the need and rationale of SSI's.
b. E-xphin briefly the Govemment support for SSI during 5 year plan.
c.-,1kplain the objectives and functions of WTO.
t'd. Write functions of District industries centers / single window concept.
b. Write a short note on NSIC.
c. Explain the objectives and functions provided by TECSOK and KSSIDC.
a. Briefly outline the contents of a project.
b. What is Financial and Social feasibility study?
c. What is Project Appraisal? Explain the steps followed in project appraisals.
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USN
Fifth Semester B.E. Degree Examination, June/July 2015
Management and Entrepreneurship
Time: 3 hrs. M ax. M arks: 100
Note: Answer any FIVE full questions, selecting atleast TWO questions from.,pach part
PART _ A
a. Define Management. Explain different levels of Management.
b. Explain function al area of Management.
c. What is the profession and administration management?
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ti* ' (05 Marks)
(05 Marks)
(10 Marks)
(05 Marks)
(05 Marks)
(10 Marks)
(05 Marks)
(05 Marks)
Discuss any two types of organizatton structurbs with highlighting their merits and demerits.
(10 Marks)
(05 Marks)
(05 Marks)
(10 Marks)
(05 Marks)
(05 Marks)
(10 Marks)
(05 Marks)
(05 Marks)
(10 Marks)
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2. 10EC52
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1a.
b.
c.
Fifth Semester B.E. Degree Examinatior, June/July 201.5
Time: 3 hrs.
Digital Signal Processing
Max.
Note: Answer FIVE full questions, selecting
at least TWO questions from each part.
PART - A
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Compute the DFT of the sequence x(n) = .or[$.]", N = 4, plot lx{kffi Zx(k).
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Find the DFT of the sequence x(n) = 0.5n u(n) for 0 < r,l,s-ffiiy evaluating x(n) = an for
0<n<N-1. , (O7Marks)
Find the relation between DFT and Z transform. .,..,'. (04 Marks)
{1,,
2 a. State and prove the linearity property of DFT and lsymmetrical property. (05 Marks)
b. The five samples of the 8 point DFT x(k) arg.S"i 'as
x(0) -0.25,x(l) = 1.25- j0.3018,x(6) = x(4",)} 0,x(5) =0.125 - j0.0518. (05Marks)
Determine the remaining sample if thq,,rcqtience x(n) is real valued?
c. For x(n) = { 1, - 2,3 - 4,5,- 6 }, witheimsbmputing its DFT, find the following
s tu*# s
i) x (o) ii) Ix G) iii) x(3). it{,;{tx (k) 12 v) I(-t)u x (k)
b. Compare Butterworth and Chebyshev filters.
(10 Marks)
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3 a. Consider a FIR filter wi"t}il.,ffiulse response
h(n) = { I ,l,l }, if _thd put is
X(n) = { 1,2,0,^-?,t1,'2, -1, l, -2,3,2, I -3), Find the output y(n) using overlap add method.
1'*'"'i,fl# (12 Marks)
b. What is in p-[pqe eomputation? What is total number of complex additions and multiplication
required &,(,ilf =256 point, if DFT is computed directly and if FFT is used? (03 Marks)
c. For seffiedce x(n) = { 2, 0, 2, 0 } determine x(2) using Goertzel Filter. Assume the zero@
+-
initiq&d@irditions. (05 Marks)
d,'j,.;F
4 ar-;ffifO the circular convolution of x(n) = {1, l, 1, I } andh(n) = {1,0, 1,0 } using DIF-FFT
,y*'r;algorithm. (12 Marks)
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bl Derive DIT-FFT algorithm for N = 4. Draw the complete signal How graph? (08 Marks)
PART - B
5 a. Design a Chebyshev analog filter (low pass) that has a -3dB cutoff frequency of 100 rad/sce
and a stopband attenuation 25dB or greater for all radian frequencies past 250 rad/sec
(14 Marks)
(03 Marks)
I of 3

3. 6a.
108C52
c.LetH(s)=+repreSentthetransferfunctionofLPFwithapassbandof1rad/sec.Use
s- +s+l
frequency transformation (Analog to Analog) to find the transfer function of a band pass
fitter with passband l0 radlsec and a centre frequency of 100 radlsec. (03 Mark)
,r+, "
fu-*u =
.r:iji!lr! {liil
Obtain block diagram of the direct form I and direct form II reahzation for a diffi {IR fitter
described by the system function. *,u -.
,,,.#
rr,,_ 823-422+llz-2 .ru,-''#
Hz) =m **q;.t
(l0Marks)
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Find the transfer function and difference equationrealization skib&rin Fig.Q 6(b).b.
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c. Obtain the direct form realizatb-nMlinear phase FIR system given by
H(z)=I+
l.'.f, ,-' r.-,' ,ii
(06 Marks)
(04 Marks)
7 a. The desired frequencfr?esbonse of a low pass fitter is given by
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Ho(ej*l=u*tioit=l' n' 4
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Deterr,t e the frequency response of the FIR if Hamming window is used with N = 7.
,,-,,',,i,,.,'.ir,""" (10 Marks)
b.
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C-orriiiare IIR filter and FIR filters. (06 Marks)
i€onsider the pole-zero plot as shown in Fig Q.7(c) i) Does it represent an FIR fitter? ii) Is it
linear phase system? (04 Marks)
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2of3

4. ,.& -a
8 a. Design a digital filter H(z) that when used in an AID-H(z)-D/A
equivalent analog filter with the following specification :
Passband ripple : < 3.01dB
Passband edge : 500H2
Stopband attenuation : > 15dB
Stopband edge : 7 50 Hz
SampleRate:2KkIz
structures gives an
Use Bilinear transformation to design the filter on an analog system ,funCtion. Use
Butterworth filter prototype. Also obtain the difference equation. ':1"*,* (14 Marks)
b. Transform the analog filter
H"(s)= sil- .i*
Into H(z) using impulse invariant transformation Take T = 0.llS_&ry:
10EC52
(06 Marks)
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3 of 3

5. USN
Fifth Semester B.E. Degree Examination, June/July 20lS
Analog Gommunication
Time: 3 hrs.
Note: 7. Answer any FrvE full questions, selecting
atleast TWO questions from each part.
2. Missing data be suitobly assumed.
3. Standard notations ore used
4. Draw neat diagrams, wherever necessar)l.
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t a. Define joint probability dens-, d$[I;f,. that the total,
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2 a. Explain the generation of DSB-SC using ring mofuhtor. (07 Marks)
b. Explain with block diagrams, quadrature ..urri"i multiplexing and demultiplexing system.
represented by the joint PDF is always 1.
b. State and prove central limit theorem.
c. Find the CDF for an experiment of tossing a coin.
value I and tail (T) with value - 1.
c. A 500w carrier is modulated on a depth of jo%, calculate
wave in the following forms of AM.
i) Double sideband with full carrier.
ii) Double sideband suppressed Carrier.
iii) Single sideband suppressbd iarrier.
Max. Marks:100
under the surface
(07 Marks)
(07 Marks)
The randbm variable maps head (H) with
,,....,,., " (06 Marks)
(07 Marks)
the total power in the modulated
(06 Marks)
(06 Marks)
(07 Marks)
Mention its
(07 Marks)
3 a. Define Hilbert hansfor$;lhing Hilbert transform, derive the equation for SSB signals only
. yill YlB.e9 rejecti4p!$e LSB. Exptain with block diagram. (07 Marks)
b. with block diagragr,$plain third method for generation of SSB modulated waves.
. ()- (07 Marks)
c. X(t) =, rq(q cos 2 ur f,t, obtain its pre-envelope and complex conjugate of pre-mvelope.
_1.,)- (06 Marks)
4 ? Explarn the method of envelope detection of a USB wave plus carrier.
b. Yifithe help of block diagram, explain the working of FDM system.
c. . Explain with a block diagram working of a superhet.rodyn. receiver.
,,. 'advantages over TRF receiver.
. PART-B
5 a. Derive the equation for FM waves. Define modulation index, maximum deviation and
bandwidth of a FM signal. (07 Marks)
b. With the help of block diagram, explain the generation of narrowband FM using DSB-SC
modulator. (07 Marks)
c. A carrier wave of amplitude 5V and frequency 90MHz is frequency modulated by a
sinusoidal voltage of amplitude 5V and frequency l5kHz.The frequencydeviation constant
is 1 kHzA/. Sketch the spectrum of the modulated FM wave. Given Jo: O.g6,Jr :0.1g and
Jz: 0.02 (06 Marks)
I of 2

6. a.
b.
c.
a.
b.
Explain the working of a balanced slope detector.
With a block diagram, explain the working of a FM stereo multiplexing.
Explain the linear model of phase locked loop.
Derive Friiss's formula for cascade connection of two post network.
c. Explain about pre-emphasis and de-emphasis in FM.
10ECs3
(07 Marks)
(07 Marks)
(06 Marks)
(07 Ma,rks)
a.
b.
Define noise factor of a network. Show that by proving suitable equations that with the
increase in noise factor the noise power at the output will also increases. (07,Marks)
c. If each stage has a gain of 1OdB and noise figure of 1OdB. Determine the overall noise figure
of a two stage cascaded amplifier. (06 Marks)
Derive the equation for the figure of merit of an AM receiver operating o,n'sihgle ,iffi
#h,....,.'..
Derive the equation for the signal to noise ratio at the output of the DSB-SC receiver.
(07 Marks)
(06 Marks)
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2 of2

7. USN 10EC54
Fifth Semester B.E. Degree Examination, June/July 2015
Microwaves and Radar
"'STime:3 hrs. Max. MdSlOO
Note: Answer any FIW full questions, ,-. F
g dleast TWO questionsfrom each part
$O''n,
I pARr-A 1n?
E 1 a. Derive:
K i) Voltage and current equations on a transmission line.
E il) The characteristic impedance of the line.
-.
g iir) Propagation constant.
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=
iv) Phase velocity.
E € b. Explainhow car5iq)*rent I"1t) ana yeya crurent I"(t) oie generated^when a read diode is
; 5 mounted in q @5wave resonant circuit, with the aid of diagrams for structure of rcad
H g diode, fiel{-{jilributioq applied ac voltage and I.(t) and I"(t). (07 Marks)
-A
& c. write eE[$I€nt circuit for a parametric amplifier. AN up-converter parametric amplifier
H q has t[g$fowing parameters:
f E i)d*ffigore of merit; ye - 8
A E @ffi Ratio of output frequency over signal frequency f7f,: 6Z ,E iiXY natio ofoutput Aequency over signal frequency f./f. = 6
E E .O) Factor of merit figure; y:0.2
Li . . r v iu) Diode teryerature Ta = 300o t
.H $ v Calculate: i; ft" po*er guin in dB; ii) The noise figure in dB; iii) Bandwidth. (05 Merks)
ffi"'14 a. What is a reciprocal network? For a reciprocal microwave N-port network prove tlat the
5 F' admittance and iftpedance matrices are symmetrical. (07 Marks)
, i b. State and prove ttre following properties ofS-parameters: .
ij i) Symmetry property for a reciprocal network.
2 ii) Unitary property for a lossless junction. (0E Mrrks)
E
c. The impedance matric of a passive network is given by ,=li :l,find
scattering matrix.
E Lr z)
(05 Marks)
,* E v) The relative phase velocity facto ,. ,o' U (12 Marks)
E 3 b. What ls impedance matching? Explain single stub mMing and double stub matching.
'3t o field equation t.".**^#.*ide and derine *, ". -"r:::;:]H; 2 a. Derive TE-, field equation in rectangul
i ; cutoff frequency, propagation constant^ph&se-velocity, character wave impedance and wave
; E lengttr in the guide.
^tJ (10 Marks)
iA b. ExplainwhyTEMmodeisnotpgs-fi$Inwaveguides. (02Mark$
i €
c. Explain faraday rotation and dis&$&icrowave circulator. (08 Markg
tR' s:car {-
{ € 3 a. Discuss the criterion for c$ifuing the modes of operation for Gunn effect diodes. For a
AE transit time domain q{e} the domain velocity is equal to the current drift velocity is
{ E !07 9n/s, Determinefl}trift lengh of the diode bf a Aequency of 8GIIz. (07 Mrrks)
l of 2

8. b. What are waveguide tees? Explain with the aid of neat diagrarq E-plane tree and H-plane
,. [i.i'ro* urrlications of Magic-T. Explain Magic-Tee as a microwave mixer. l3f, #ffi
' I i"JffiiJ,itr"ilT.1,,: ;l;"ffiT;ff::;:^:"
:', u'u oJiG
.sf'*'Relative dielectric constant ofpolyethylene ea:2.25. r}
Stripwidtb; W:25mm. ^1'.Separationwidth;d=5mm {17
Calculate: H'
i) Characteristic impedance of the strip line. - $*'
ii) Stip-line capacitarce . ,.C
iil) StripJine inductance.
^' V
rv) Phase velocity. g (08 Marks)
c. Write a note on coplanar stripline.
*') I (05 Morks)
7 a. What is radar? With a neat block diagrarl
@d[o tne operation of radar. (08 Marks)
b. Explain the various forms ofradar equatiop. - (06 Marks)
c. Discuss the applications the radar
^(J
(06 Marks)
8 a. With a neat block diagrarr,
"*r$*
roroler radar. (08 Markr)
b. Explain a simple MTI delay $cinceller. (0E Marks)
c. Discuss the difference betu5flr MTI and Doppler radar. (04 Marks)
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PART - B
5 a. Why are co-axial connectors and adapters used? List six types of co-axial connectors with
their frequency ranges. (05 Marks)
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9. USN
Fifth Semester B.E. Deg
lnformation
Time: 3 hr s.
Fig.Q. 1(c)
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all the code words
l0ECss
2015
Max. Marks:100
(04 Marks)
for the symbols given
(08 Marks)
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Note: Answer any FIW full questions, selecting
PART - A
a. Derive an expression for average information content (entropy) of long independent
messages. (05 Marks)
b. Define information [I], average information, information rate, symbol iate and mutual
information. (05 Marks)
c. For the Markov source model shown below compute initial probabilities, state entropy
source entropy and show that Gr > Gz > H(s). (10 Marks)
^
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3/+ i yr
2a.
b.
c.
3a.
4a.
b.
c.
Explain Shannon's noiseless encoding algorithrn
Using Shannon's binary encoding algorithnq find
b.
below also find its efficiency and reduudancy. Giull(ranuY. Jtven:
So Sr. Sz S: Sa
0.55 0. 1s 0.1s 0.1 0.0s
State all the properties of entropy Md prove the external property. (08 Marks)
For a channel whose matriiis as given below for which P(x1) : Il2; P(xz): P(x:) : ll4
and rs_10,000 sym/sec. Find H(x), A(y), H(x, y), H(>/y), H(y/x), I(x,y).Also find
information rate at transrnitter (Rin) and information rate at receiver (R1), capacity, efficiency
and redundancy., ,, , '
lo.s 0.2 o l
p(vt*;=fo.r 0.8 o,l (rQMarks)
L 0 0.2 0.8.]
e sourie produces 9 symbols with probabilities {0.36, 0.24, 0.12,0.08, 0.08, 0.07,0.03,
0.02)
i) Construct Huffman binary code and determine its efficiency (r1) and redundancy (R).
iD Construct Hufftnan ternary code and find its efficiency (r1) and redundancy (R).
(10 Marks)
limit of the
(07 Marks)
(06 Marks)
given by
- ),12, ftnd
I
(07 Marks)
State and explain Shannon Hartley law. Derive an expression for the upper
channel capacity.
Define mutual information and explain all the properties of mutual information.
Two noisy channels are cascaded whose channel matrices are
p(vt*)=
l:: l: i:1 plt,=[]L :: ','|wi,h p(x ): p(xz)
LUz 0 U2)
the over all mutual information l(x,z) uod ,(lI),

10. 10EC55
PART - B
a. Draw the block diagram of a digital communication system and explain the function of each
a. A(15,5)linearcycliccodehasageneratorpolynomialg(x)= I +x+x2 +xa+xs +*t +*'n
i) Draw the cyclic encoder and find codeword for the message polynomial.
D(x) : 1 * * + xa in systematic form by listing the states ofthe shift register.
ii) Draw the syndrome calculator circuit for given S(x). (12 Marks)
b. For the given generator polynomial find generator matrix and parity check matrix and find
codeword for (7,3) Hamming code and its hamming weight g(x) - 1 + x + x2 + xa.
(08 Marks)
block.
b. The parity check bits of a (7 ,4) Hamming codes are generated by
cs:dt+d3+d4
co:dt+d2+d3
V:dz+d3+d4
where dr, dz, d: and d+ are mesSage bits
i) Find generator matrix (G) and parity check matrix [H] for this code.
ii) Prove that GHr : 0.
iii) Find the minimum weight of this code.
iv) Find effor detecting and correcting capability.
v) Draw encoder circuit and syndrome circuit for the same. .,
c. Compare fixed length code and variable length code.
Write short notes on: I
a. BCi-I codes ,, ,,,.=
b. Shortened cyclic code
d. Golay code .,,,r'r-
e. Burst error correcting cofu
.._.=.1,t. -,i,
a. Consider the convo,rutional encoder shown below:
i) Draw the state diagram
ii) Draw code tree
iii) Find: th codeword for the message sequence 101 I 1 .
ilp c-o& ,ourJ
Fig.Q.8(a)
For a (2, l, 2) convolutional encoder with generator sequence gl : 111
i) Draw convolutional encoder circuit.
ii) Find the codeword for the message sequence 101 1 1 using time
transfer domain approach.
{<rFnt{<*
2 of 2
(06 Marks)
(12 Marks)
(02 Marks)
(20 Marks)
(10 Marks)
and g(2): 101.
domain approach and
(10 Marks)
b.

11. USN
Time: 3 hrs.
1a,
b.
L.
Fifth Semester B.E. Degree
Fu nda m e nta Is
10EC56
2015
(10 Marks)
CMOS domino logic.
(06 Marks)
(04 Marks)
Max. Marks:100
Note: Answer any FIVE full questions, selecting
atleast TWO questions from each part.
PART _ A
Discuss the nMOS enhancement mcde transistor for different conditions of vds. (05 Marks)
Elaborate the concept of P-well falorication with neat sketches. (10lVlarks)
Compare CMOS and bipolar technologies. 04 Marks)
1'
Obtain the transfer characteristics of a CMOS inverter and ma& all the regions. Showing the
3a.
b.
Discuss in detail the 7u - based design for CMOS1,.,... .
Realize a 3-input NAND gate for clocked CMbS'logic and also for
Discuss the working of pseudo nMoS logic #ittr suitable example.
(06 Marks)
(06 Marks)
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b. Explain in brief the wiring capacitances.
c. Narrate the steps involved in calculate the sheet resistance of :
i) Transistor channel ii) nMOS inverter iii) CMOS inverter.
PART - B
!
What are the scaling factors for the following device parameters :
i) Gate capacitance cs ii) max-operating frequency f0 iii) current density iv) power
dissipation per gate ps v) power speed product PT. (10 Marks)
Design a parity generator with the following specifications and draw the stick diagram of
one basic cell.
(10 Marks)
As P
J in++Vo*ct
[1, even numbers of I'sD_,,I
-1
[0, odd numbers of l's
b. Illustrate the schematic and stick diagram for the expression Y = A(B + C) . (10 Marks)
a. Describe the delay unit r in ternl^s of sheet resistance and area capacitance for the CMOS
inverter pain shown, calculate the total delay. (08 Marks)
Fig. Qs(b)
,P
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12. 6a.
b.
c.
10EC56
Draw the basic form of a two-phase clock generator and explain in detail. (08 Marks)
Discuss the architectural issues to be fbllowed in the design of a VLSI subsystem. (06 Marks)
Explain the precharge bus approach used in system design. (06 Marks)
Explain the three transistor dynamic RAM cell. (10 Marks)
Discuss the Bangh-Wooley method used for two's complement multiplication. (10 Marks)
Narratethemeaningof.oRealEstate,,inVLSIdesign.
Explain testing and testability in detail. (10 Marks)
Write a short note on scan design techniques. (05 Marks)
a.
b.
a.
b.
c.
*{<*xx
2of2